JP2024528580A - ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法 - Google Patents

ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法 Download PDF

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JP2024528580A
JP2024528580A JP2024500462A JP2024500462A JP2024528580A JP 2024528580 A JP2024528580 A JP 2024528580A JP 2024500462 A JP2024500462 A JP 2024500462A JP 2024500462 A JP2024500462 A JP 2024500462A JP 2024528580 A JP2024528580 A JP 2024528580A
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doped
sic
atoms
precursor material
type
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JP2024528580A5 (https=
Inventor
ダレン ハンセン，
ダグラス デュークス，
マーク ロボダ，
マーク ランド，
ホアン， カルロス ロホ，
ヴィクター トーレス，
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Pallidus Inc
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Pallidus Inc
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    • C—CHEMISTRY; METALLURGY
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    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
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    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
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    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/571—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained from Si-containing polymer precursors or organosilicon monomers
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/632—Organic additives
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    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
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    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3427—Silicates other than clay, e.g. water glass
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    • C04B2235/48—Organic compounds becoming part of a ceramic after heat treatment, e.g. carbonising phenol resins
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    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
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  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2024500462A 2021-07-09 2022-07-09 ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法 Pending JP2024528580A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202163220132P 2021-07-09 2021-07-09
US63/220,132 2021-07-09
US202263337088P 2022-04-30 2022-04-30
US63/337,088 2022-04-30
PCT/US2022/036595 WO2023283471A1 (en) 2021-07-09 2022-07-09 Sic p-type, and low resistivity, crystals, boules, wafers and devices, and methods of making the same

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JP2024528580A true JP2024528580A (ja) 2024-07-30
JP2024528580A5 JP2024528580A5 (https=) 2025-06-09

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JP2024500462A Pending JP2024528580A (ja) 2021-07-09 2022-07-09 ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法
JP2024500466A Pending JP2024524583A (ja) 2021-07-09 2022-07-09 ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法
JP2024500465A Pending JP2024525605A (ja) 2021-07-09 2022-07-09 ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法

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JP2024500465A Pending JP2024525605A (ja) 2021-07-09 2022-07-09 ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法

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US (3) US20230167582A1 (https=)
EP (3) EP4367083A4 (https=)
JP (3) JP2024528580A (https=)
KR (3) KR20240053577A (https=)
CA (3) CA3225056A1 (https=)
WO (3) WO2023283471A1 (https=)

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CN118086866B (zh) * 2024-02-27 2024-08-20 湖南德智新材料有限公司 一种制备碳化硅材料的方法及碳化硅材料

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US6613143B1 (en) * 2001-07-06 2003-09-02 Technologies And Devices International, Inc. Method for fabricating bulk GaN single crystals
JP5068423B2 (ja) * 2004-10-13 2012-11-07 新日本製鐵株式会社 炭化珪素単結晶インゴット、炭化珪素単結晶ウェハ及びその製造方法
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US20230167582A1 (en) 2023-06-01
EP4367710A1 (en) 2024-05-15
CA3225066A1 (en) 2023-01-12
KR20240064624A (ko) 2024-05-13
US20230167583A1 (en) 2023-06-01
JP2024525605A (ja) 2024-07-12
KR20240053577A (ko) 2024-04-24
KR20240064623A (ko) 2024-05-13
EP4367083A1 (en) 2024-05-15
WO2023283472A1 (en) 2023-01-12
EP4367711A1 (en) 2024-05-15
EP4367083A4 (en) 2025-05-28
WO2023283474A1 (en) 2023-01-12
EP4367711A4 (en) 2025-06-04
US20230167580A1 (en) 2023-06-01
WO2023283471A1 (en) 2023-01-12
EP4367710A4 (en) 2025-04-23
JP2024524583A (ja) 2024-07-05
CA3225056A1 (en) 2023-01-12
CA3225061A1 (en) 2023-01-12

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