JP2024510964A5 - - Google Patents
Info
- Publication number
- JP2024510964A5 JP2024510964A5 JP2023555123A JP2023555123A JP2024510964A5 JP 2024510964 A5 JP2024510964 A5 JP 2024510964A5 JP 2023555123 A JP2023555123 A JP 2023555123A JP 2023555123 A JP2023555123 A JP 2023555123A JP 2024510964 A5 JP2024510964 A5 JP 2024510964A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- metal layer
- conductive
- electrically coupled
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/194,846 | 2021-03-08 | ||
| US17/194,846 US11652027B2 (en) | 2021-03-08 | 2021-03-08 | Vertical transistors with gate connection grid |
| PCT/US2022/070659 WO2022192830A1 (en) | 2021-03-08 | 2022-02-15 | Vertical transistors with gate connection grid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024510964A JP2024510964A (ja) | 2024-03-12 |
| JP2024510964A5 true JP2024510964A5 (https=) | 2025-02-26 |
Family
ID=80786458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023555123A Pending JP2024510964A (ja) | 2021-03-08 | 2022-02-15 | ゲート接続グリッドを有する縦型トランジスタ |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11652027B2 (https=) |
| EP (1) | EP4278387A1 (https=) |
| JP (1) | JP2024510964A (https=) |
| KR (1) | KR20230150972A (https=) |
| CN (1) | CN116964750A (https=) |
| TW (1) | TW202249279A (https=) |
| WO (1) | WO2022192830A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20250072045A1 (en) * | 2023-08-24 | 2025-02-27 | Alpha And Omega Semiconductor International Lp | Low threshold high density trench mosfet |
| TWI896370B (zh) * | 2024-10-14 | 2025-09-01 | 聯華電子股份有限公司 | 碳化矽金屬氧化物半導體場效電晶體及其製造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6686668B2 (en) | 2001-01-17 | 2004-02-03 | International Business Machines Corporation | Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask |
| US7638841B2 (en) | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| JP2007042817A (ja) * | 2005-08-02 | 2007-02-15 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置およびその製造方法 |
| JP2009158717A (ja) | 2007-12-26 | 2009-07-16 | Nec Electronics Corp | 縦型電界効果トランジスタ及びその製造方法 |
| US7915672B2 (en) | 2008-11-14 | 2011-03-29 | Semiconductor Components Industries, L.L.C. | Semiconductor device having trench shield electrode structure |
| US8304829B2 (en) | 2008-12-08 | 2012-11-06 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
| JP2012064899A (ja) * | 2010-09-17 | 2012-03-29 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP5959162B2 (ja) * | 2011-06-09 | 2016-08-02 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| US8530304B2 (en) | 2011-06-14 | 2013-09-10 | Semiconductor Components Industries, Llc | Process of forming an electronic device including a gate electrode and a gate tap |
| US8536646B2 (en) | 2011-09-21 | 2013-09-17 | Sinopower Semiconductor Inc. | Trench type power transistor device |
| US9412862B2 (en) | 2013-03-11 | 2016-08-09 | Semiconductor Components Industries, Llc | Electronic device including a conductive electrode and a process of forming the same |
| JP6219140B2 (ja) * | 2013-11-22 | 2017-10-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| DE102015104988A1 (de) * | 2015-03-31 | 2016-10-06 | Infineon Technologies Austria Ag | Halbleitervorrichtung mit Gate-Finnen |
| US10600905B1 (en) | 2018-09-11 | 2020-03-24 | Semiconductor Components Industries, Llc | Trench MOSFET contacts |
| CN111403341B (zh) | 2020-03-28 | 2023-03-28 | 电子科技大学 | 降低窄控制栅结构栅电阻的金属布线方法 |
| US12094876B2 (en) * | 2020-04-30 | 2024-09-17 | Wolfspeed, Inc. | Conduction enhancement layers for electrical contact regions in power devices |
-
2021
- 2021-03-08 US US17/194,846 patent/US11652027B2/en active Active
-
2022
- 2022-02-15 KR KR1020237029542A patent/KR20230150972A/ko active Pending
- 2022-02-15 EP EP22708267.4A patent/EP4278387A1/en active Pending
- 2022-02-15 CN CN202280019458.4A patent/CN116964750A/zh active Pending
- 2022-02-15 JP JP2023555123A patent/JP2024510964A/ja active Pending
- 2022-02-15 WO PCT/US2022/070659 patent/WO2022192830A1/en not_active Ceased
- 2022-03-07 TW TW111108119A patent/TW202249279A/zh unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5427168B2 (ja) | ゲートとドレイン間に減少した電界を有するｉｉｉ−族窒化物半導体デバイス | |
| JP6666671B2 (ja) | 半導体装置 | |
| US9450086B2 (en) | Semiconductor device | |
| JP2024510964A5 (https=) | ||
| JP2019021871A5 (https=) | ||
| US20180204905A1 (en) | Semiconductor device and method of manufacturing the semiconductor device | |
| JP2003007843A5 (https=) | ||
| US9178055B2 (en) | Semiconductor device | |
| CN111933716B (zh) | Ldmos晶体管及其制造方法 | |
| JPH11354756A (ja) | 半導体装置及びその製造方法 | |
| TW201639180A (zh) | 二極體元件及其製造方法 | |
| US20100224909A1 (en) | Semiconductor device and method for fabricating the same | |
| KR100360416B1 (ko) | 높은 브레이크다운 전압을 갖는 전력용 반도체소자 및 그제조방법 | |
| JPH11266018A (ja) | 半導体装置 | |
| TWI524525B (zh) | 具有汲極在頂部的功率電晶體及其形成方法 | |
| JP4972293B2 (ja) | 半導体装置およびその製造方法 | |
| JPH11289089A5 (https=) | ||
| JPH06169090A (ja) | パワーｍｏｓｆｅｔ | |
| JP3301271B2 (ja) | 横型パワーｍｏｓｆｅｔ | |
| CN109860118B (zh) | 一种阵列基板及其制备方法 | |
| JPH07193244A (ja) | 電界効果により制御可能の半導体デバイス | |
| JP2594942B2 (ja) | 半導体装置の製造方法 | |
| JP2004349384A (ja) | 半導体装置 | |
| US8772872B2 (en) | Transistors, semiconductor memory cells having a transistor and methods of forming the same | |
| JP2917720B2 (ja) | 縦型電界効果トランジスタ |