JP2024510964A - ゲート接続グリッドを有する縦型トランジスタ - Google Patents

ゲート接続グリッドを有する縦型トランジスタ Download PDF

Info

Publication number
JP2024510964A
JP2024510964A JP2023555123A JP2023555123A JP2024510964A JP 2024510964 A JP2024510964 A JP 2024510964A JP 2023555123 A JP2023555123 A JP 2023555123A JP 2023555123 A JP2023555123 A JP 2023555123A JP 2024510964 A JP2024510964 A JP 2024510964A
Authority
JP
Japan
Prior art keywords
dielectric layer
region
gate electrode
metal layer
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023555123A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024510964A5 (https=
Inventor
トーマス ナイヤー，
ヴレーシューヴェル， ヘルベルト デ
フレデリク アラースタム，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Components Industries LLC
Original Assignee
Semiconductor Components Industries LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Components Industries LLC filed Critical Semiconductor Components Industries LLC
Publication of JP2024510964A publication Critical patent/JP2024510964A/ja
Publication of JP2024510964A5 publication Critical patent/JP2024510964A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0698—Local interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2023555123A 2021-03-08 2022-02-15 ゲート接続グリッドを有する縦型トランジスタ Pending JP2024510964A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/194,846 2021-03-08
US17/194,846 US11652027B2 (en) 2021-03-08 2021-03-08 Vertical transistors with gate connection grid
PCT/US2022/070659 WO2022192830A1 (en) 2021-03-08 2022-02-15 Vertical transistors with gate connection grid

Publications (2)

Publication Number Publication Date
JP2024510964A true JP2024510964A (ja) 2024-03-12
JP2024510964A5 JP2024510964A5 (https=) 2025-02-26

Family

ID=80786458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023555123A Pending JP2024510964A (ja) 2021-03-08 2022-02-15 ゲート接続グリッドを有する縦型トランジスタ

Country Status (7)

Country Link
US (1) US11652027B2 (https=)
EP (1) EP4278387A1 (https=)
JP (1) JP2024510964A (https=)
KR (1) KR20230150972A (https=)
CN (1) CN116964750A (https=)
TW (1) TW202249279A (https=)
WO (1) WO2022192830A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250072045A1 (en) * 2023-08-24 2025-02-27 Alpha And Omega Semiconductor International Lp Low threshold high density trench mosfet
TWI896370B (zh) * 2024-10-14 2025-09-01 聯華電子股份有限公司 碳化矽金屬氧化物半導體場效電晶體及其製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007042817A (ja) * 2005-08-02 2007-02-15 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置およびその製造方法
JP2012064899A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 半導体装置およびその製造方法
JP2015103611A (ja) * 2013-11-22 2015-06-04 ルネサスエレクトロニクス株式会社 半導体装置
US20160293751A1 (en) * 2015-03-31 2016-10-06 Infineon Technologies Austria Ag Semiconductor Device with Gate Fins

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6686668B2 (en) 2001-01-17 2004-02-03 International Business Machines Corporation Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP2009158717A (ja) 2007-12-26 2009-07-16 Nec Electronics Corp 縦型電界効果トランジスタ及びその製造方法
US7915672B2 (en) 2008-11-14 2011-03-29 Semiconductor Components Industries, L.L.C. Semiconductor device having trench shield electrode structure
US8304829B2 (en) 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
JP5959162B2 (ja) * 2011-06-09 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US8530304B2 (en) 2011-06-14 2013-09-10 Semiconductor Components Industries, Llc Process of forming an electronic device including a gate electrode and a gate tap
US8536646B2 (en) 2011-09-21 2013-09-17 Sinopower Semiconductor Inc. Trench type power transistor device
US9412862B2 (en) 2013-03-11 2016-08-09 Semiconductor Components Industries, Llc Electronic device including a conductive electrode and a process of forming the same
US10600905B1 (en) 2018-09-11 2020-03-24 Semiconductor Components Industries, Llc Trench MOSFET contacts
CN111403341B (zh) 2020-03-28 2023-03-28 电子科技大学 降低窄控制栅结构栅电阻的金属布线方法
US12094876B2 (en) * 2020-04-30 2024-09-17 Wolfspeed, Inc. Conduction enhancement layers for electrical contact regions in power devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007042817A (ja) * 2005-08-02 2007-02-15 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置およびその製造方法
JP2012064899A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 半導体装置およびその製造方法
JP2015103611A (ja) * 2013-11-22 2015-06-04 ルネサスエレクトロニクス株式会社 半導体装置
US20160293751A1 (en) * 2015-03-31 2016-10-06 Infineon Technologies Austria Ag Semiconductor Device with Gate Fins

Also Published As

Publication number Publication date
US20220285248A1 (en) 2022-09-08
US11652027B2 (en) 2023-05-16
WO2022192830A1 (en) 2022-09-15
KR20230150972A (ko) 2023-10-31
EP4278387A1 (en) 2023-11-22
CN116964750A (zh) 2023-10-27
TW202249279A (zh) 2022-12-16

Similar Documents

Publication Publication Date Title
US11764129B2 (en) Method of forming shield structure for backside through substrate vias (TSVS)
US9129982B2 (en) Semiconductor device and manufacturing method
TWI389309B (zh) 利用下沉溝槽之具有頂部汲極的半導體功率元件
EP2465141B1 (en) Gallium nitride microwave and power switching transistors with matrix layout
TWI433315B (zh) 用於功率元件之渠道場板終止結構
US7019361B2 (en) Semiconductor device and method of fabricating the same
JP2018182324A (ja) 静電放電保護構造を含む半導体デバイス
JP7422166B2 (ja) 作用面積を増加させたトランジスタ半導体ダイ
US7964911B2 (en) Semiconductor element and electrical apparatus
CN113035955A (zh) 集成肖特基二极管的碳化硅mosfet器件及其制备方法
CN102222695A (zh) 用于制造到达衬底的顶部接触的结构
JP2024510964A (ja) ゲート接続グリッドを有する縦型トランジスタ
US5592026A (en) Integrated structure pad assembly for lead bonding
US20240413229A1 (en) Semiconductor device having first trenches with a gate electrode and second trenches with a source electrode
CN116759450A (zh) 包括宏单元的半导体器件
TWI918275B (zh) 半導體裝置與其製作方法
US20260040613A1 (en) Gate trench power semiconductor devices having deep channel regions and related methods of fabricating same
US20250241040A1 (en) Gate trench power semiconductor devices having deep trench shield connection patterns
JP4078895B2 (ja) 半導体装置
US20250220995A1 (en) Silicon carbide based semiconductor devices with ring-shaped channel regions and/or channel regions that extend in multiple directions in plan view
US20250254909A1 (en) Power semiconductor devices including integrated polysilicon devices
JP2005310902A (ja) 半導体装置と半導体装置の製造方法
WO2024102579A9 (en) Transistors with selectively landed gate array
TWM681481U (zh) 半導體裝置
JP2025085062A (ja) トレンチ半導体パワーデバイス

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250217

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250217

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20260122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20260127