TW202249279A - 具有閘極連接格柵之垂直電晶體 - Google Patents

具有閘極連接格柵之垂直電晶體 Download PDF

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Publication number
TW202249279A
TW202249279A TW111108119A TW111108119A TW202249279A TW 202249279 A TW202249279 A TW 202249279A TW 111108119 A TW111108119 A TW 111108119A TW 111108119 A TW111108119 A TW 111108119A TW 202249279 A TW202249279 A TW 202249279A
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Taiwan
Prior art keywords
dielectric layer
region
gate electrode
metal layer
conductive
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TW111108119A
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English (en)
Chinese (zh)
Inventor
湯瑪士 奈爾
弗萊舒維爾 赫伯特 德
弗雷德里克 阿勒斯坦
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美商半導體元件工業有限責任公司
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Publication of TW202249279A publication Critical patent/TW202249279A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0698—Local interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW111108119A 2021-03-08 2022-03-07 具有閘極連接格柵之垂直電晶體 TW202249279A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/194,846 2021-03-08
US17/194,846 US11652027B2 (en) 2021-03-08 2021-03-08 Vertical transistors with gate connection grid

Publications (1)

Publication Number Publication Date
TW202249279A true TW202249279A (zh) 2022-12-16

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW111108119A TW202249279A (zh) 2021-03-08 2022-03-07 具有閘極連接格柵之垂直電晶體

Country Status (7)

Country Link
US (1) US11652027B2 (https=)
EP (1) EP4278387A1 (https=)
JP (1) JP2024510964A (https=)
KR (1) KR20230150972A (https=)
CN (1) CN116964750A (https=)
TW (1) TW202249279A (https=)
WO (1) WO2022192830A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI896370B (zh) * 2024-10-14 2025-09-01 聯華電子股份有限公司 碳化矽金屬氧化物半導體場效電晶體及其製造方法
TWI900176B (zh) * 2023-08-24 2025-10-01 加拿大商萬國半導體國際有限合夥公司 低閾值高密度溝槽mosfet

Family Cites Families (16)

* Cited by examiner, † Cited by third party
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US6686668B2 (en) 2001-01-17 2004-02-03 International Business Machines Corporation Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP2007042817A (ja) * 2005-08-02 2007-02-15 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置およびその製造方法
JP2009158717A (ja) 2007-12-26 2009-07-16 Nec Electronics Corp 縦型電界効果トランジスタ及びその製造方法
US7915672B2 (en) 2008-11-14 2011-03-29 Semiconductor Components Industries, L.L.C. Semiconductor device having trench shield electrode structure
US8304829B2 (en) 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
JP2012064899A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 半導体装置およびその製造方法
JP5959162B2 (ja) * 2011-06-09 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US8530304B2 (en) 2011-06-14 2013-09-10 Semiconductor Components Industries, Llc Process of forming an electronic device including a gate electrode and a gate tap
US8536646B2 (en) 2011-09-21 2013-09-17 Sinopower Semiconductor Inc. Trench type power transistor device
US9412862B2 (en) 2013-03-11 2016-08-09 Semiconductor Components Industries, Llc Electronic device including a conductive electrode and a process of forming the same
JP6219140B2 (ja) * 2013-11-22 2017-10-25 ルネサスエレクトロニクス株式会社 半導体装置
DE102015104988A1 (de) * 2015-03-31 2016-10-06 Infineon Technologies Austria Ag Halbleitervorrichtung mit Gate-Finnen
US10600905B1 (en) 2018-09-11 2020-03-24 Semiconductor Components Industries, Llc Trench MOSFET contacts
CN111403341B (zh) 2020-03-28 2023-03-28 电子科技大学 降低窄控制栅结构栅电阻的金属布线方法
US12094876B2 (en) * 2020-04-30 2024-09-17 Wolfspeed, Inc. Conduction enhancement layers for electrical contact regions in power devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI900176B (zh) * 2023-08-24 2025-10-01 加拿大商萬國半導體國際有限合夥公司 低閾值高密度溝槽mosfet
TWI896370B (zh) * 2024-10-14 2025-09-01 聯華電子股份有限公司 碳化矽金屬氧化物半導體場效電晶體及其製造方法

Also Published As

Publication number Publication date
US20220285248A1 (en) 2022-09-08
US11652027B2 (en) 2023-05-16
WO2022192830A1 (en) 2022-09-15
JP2024510964A (ja) 2024-03-12
KR20230150972A (ko) 2023-10-31
EP4278387A1 (en) 2023-11-22
CN116964750A (zh) 2023-10-27

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