JP2024508408A - 電磁干渉シールドおよび放熱のために構成された金属層を含むパッケージ - Google Patents

電磁干渉シールドおよび放熱のために構成された金属層を含むパッケージ Download PDF

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JP2024508408A
JP2024508408A JP2023548785A JP2023548785A JP2024508408A JP 2024508408 A JP2024508408 A JP 2024508408A JP 2023548785 A JP2023548785 A JP 2023548785A JP 2023548785 A JP2023548785 A JP 2023548785A JP 2024508408 A JP2024508408 A JP 2024508408A
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Prior art keywords
integrated device
substrate
encapsulation layer
package
layer
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Japanese (ja)
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JP2024508408A5 (OSRAM
Inventor
マルク・ヒュースゲン
フィリップ・ミヒャエル・イェーガー
Original Assignee
クアルコム テクノロジーズ インコーポレイテッド
アールエフ３６０・オイローパ・ゲーエムベーハー
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Publication of JP2024508408A publication Critical patent/JP2024508408A/ja
Publication of JP2024508408A5 publication Critical patent/JP2024508408A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/261—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions
    • H10W42/273—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions the arrangements being between laterally adjacent chips, e.g. walls between chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/261—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions
    • H10W42/276—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
JP2023548785A 2021-03-03 2022-02-07 電磁干渉シールドおよび放熱のために構成された金属層を含むパッケージ Pending JP2024508408A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/191,550 US12142577B2 (en) 2021-03-03 2021-03-03 Package comprising metal layer configured for electromagnetic interference shield and heat dissipation
US17/191,550 2021-03-03
PCT/US2022/015521 WO2022186953A2 (en) 2021-03-03 2022-02-07 Package comprising metal layer configured for electromagnetic interference shield and heat dissipation

Publications (2)

Publication Number Publication Date
JP2024508408A true JP2024508408A (ja) 2024-02-27
JP2024508408A5 JP2024508408A5 (OSRAM) 2025-07-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023548785A Pending JP2024508408A (ja) 2021-03-03 2022-02-07 電磁干渉シールドおよび放熱のために構成された金属層を含むパッケージ

Country Status (8)

Country Link
US (1) US12142577B2 (OSRAM)
EP (1) EP4302331A2 (OSRAM)
JP (1) JP2024508408A (OSRAM)
KR (1) KR20230153374A (OSRAM)
CN (1) CN116964729A (OSRAM)
PH (1) PH12023551687A1 (OSRAM)
TW (1) TW202236447A (OSRAM)
WO (1) WO2022186953A2 (OSRAM)

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US20230245978A1 (en) * 2022-02-01 2023-08-03 Skyworks Solutions, Inc. Shielded wafer level chip scale package with shield connected to ground with vias through die
TWI840075B (zh) * 2023-01-05 2024-04-21 矽品精密工業股份有限公司 電子封裝件及其製法
TWI865147B (zh) * 2023-01-05 2024-12-01 矽品精密工業股份有限公司 電子封裝件及其製法
TWI883373B (zh) * 2023-01-17 2025-05-11 華東科技股份有限公司 具散熱功能及電磁防護功能的晶片封裝結構的製造方法
US20240371774A1 (en) * 2023-05-01 2024-11-07 Taiwan Semiconductor Manufacturing Company Limited Package module including a recessed upper surface and methods of forming the package module
EP4519917A1 (en) * 2023-07-26 2025-03-12 Yangtze Memory Technologies Co., Ltd. Chip packaging structure, semiconductor structure, and fabricating method thereof
CN119232106B (zh) * 2024-09-20 2025-12-05 泉州市三安集成电路有限公司 声表面波器件及其制备方法

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JP2007067407A (ja) * 2005-08-30 2007-03-15 Samsung Electro-Mechanics Co Ltd 後面接地型フリップチップ半導体パッケージ
JP2009277910A (ja) * 2008-05-15 2009-11-26 Sharp Corp 半導体モジュールおよび半導体モジュールの製造方法
JP2011529638A (ja) * 2008-07-31 2011-12-08 スカイワークス ソリューションズ，インコーポレイテッド 一体化された干渉シールドを備えた半導体パッケージおよびその製造方法
US20140353807A1 (en) * 2008-07-31 2014-12-04 Skyworks Solutions, Inc. Semiconductor package with integrated interference shielding and method of manufacture thereof
US20140124907A1 (en) * 2012-11-05 2014-05-08 Soo-Jeoung Park Semiconductor packages
JP2016115722A (ja) * 2014-12-11 2016-06-23 アピックヤマダ株式会社 半導体製造装置、半導体装置、及び、半導体装置の製造方法
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US10163808B2 (en) * 2015-10-22 2018-12-25 Avago Technologies International Sales Pte. Limited Module with embedded side shield structures and method of fabricating the same
JP2017103282A (ja) * 2015-11-30 2017-06-08 イビデン株式会社 プリント配線板
WO2017187559A1 (ja) * 2016-04-27 2017-11-02 三菱電機株式会社 高周波回路
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US20200227312A1 (en) * 2019-01-15 2020-07-16 Infineon Technologies Ag Semiconductor devices including adhesion promoting structures and methods for manufacturing thereof

Also Published As

Publication number Publication date
CN116964729A (zh) 2023-10-27
TW202236447A (zh) 2022-09-16
US12142577B2 (en) 2024-11-12
PH12023551687A1 (en) 2024-04-22
KR20230153374A (ko) 2023-11-06
US20220285286A1 (en) 2022-09-08
WO2022186953A2 (en) 2022-09-09
EP4302331A2 (en) 2024-01-10
WO2022186953A3 (en) 2022-10-20

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