JP2024507524A5 - - Google Patents

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Publication number
JP2024507524A5
JP2024507524A5 JP2023550199A JP2023550199A JP2024507524A5 JP 2024507524 A5 JP2024507524 A5 JP 2024507524A5 JP 2023550199 A JP2023550199 A JP 2023550199A JP 2023550199 A JP2023550199 A JP 2023550199A JP 2024507524 A5 JP2024507524 A5 JP 2024507524A5
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JP
Japan
Prior art keywords
photomask
euv
gas
processing chamber
reducing agent
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JP2023550199A
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English (en)
Japanese (ja)
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JP7583953B2 (ja
JP2024507524A (ja
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Priority claimed from PCT/US2022/015554 external-priority patent/WO2022182510A1/en
Publication of JP2024507524A publication Critical patent/JP2024507524A/ja
Publication of JP2024507524A5 publication Critical patent/JP2024507524A5/ja
Application granted granted Critical
Publication of JP7583953B2 publication Critical patent/JP7583953B2/ja
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JP2023550199A 2021-02-25 2022-02-08 極紫外線フォトマスク上でのルテニウム酸化物還元のための方法及び装置 Active JP7583953B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163153753P 2021-02-25 2021-02-25
US63/153,753 2021-02-25
PCT/US2022/015554 WO2022182510A1 (en) 2021-02-25 2022-02-08 Methods and apparatus for ruthenium oxide reduction on extreme ultraviolet photomasks

Publications (3)

Publication Number Publication Date
JP2024507524A JP2024507524A (ja) 2024-02-20
JP2024507524A5 true JP2024507524A5 (enExample) 2024-10-21
JP7583953B2 JP7583953B2 (ja) 2024-11-14

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ID=83048389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023550199A Active JP7583953B2 (ja) 2021-02-25 2022-02-08 極紫外線フォトマスク上でのルテニウム酸化物還元のための方法及び装置

Country Status (7)

Country Link
US (1) US20240118603A1 (enExample)
EP (1) EP4298479A4 (enExample)
JP (1) JP7583953B2 (enExample)
KR (1) KR102959585B1 (enExample)
CN (1) CN117043674A (enExample)
TW (1) TW202238249A (enExample)
WO (1) WO2022182510A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120345049A (zh) * 2022-12-12 2025-07-18 朗姆研究公司 处理工具中的气流控制
US20260099087A1 (en) * 2024-10-07 2026-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of manufacturing semiconductor device and extreme ultraviolet photolithography systems

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101457338B (zh) 2003-02-14 2011-04-27 应用材料股份有限公司 利用含氢自由基清洁自生氧化物的方法和设备
US7547505B2 (en) * 2005-01-20 2009-06-16 Infineon Technologies Ag Methods of forming capping layers on reflective materials
KR101163221B1 (ko) * 2010-09-10 2012-07-11 에스케이하이닉스 주식회사 극자외선 광학 소자의 반사율을 회복시키는 방법 및 이를 이용한 세정 방법
CN110735181A (zh) * 2013-08-09 2020-01-31 应用材料公司 于外延生长之前预清洁基板表面的方法和设备
KR101976249B1 (ko) 2014-03-11 2019-05-07 시바우라 메카트로닉스 가부시끼가이샤 반사형 마스크의 세정 장치 및 반사형 마스크의 세정 방법
US20150376792A1 (en) * 2014-06-30 2015-12-31 Lam Research Corporation Atmospheric plasma apparatus for semiconductor processing
US9739913B2 (en) * 2014-07-11 2017-08-22 Applied Materials, Inc. Extreme ultraviolet capping layer and method of manufacturing and lithography thereof
US20170017146A1 (en) 2015-07-13 2017-01-19 Applied Materials, Inc. Process for removing contamination on ruthenium surface
KR102355875B1 (ko) 2017-12-18 2022-02-08 세키스이가가쿠 고교가부시키가이샤 표면 처리 방법 및 장치

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