KR102959585B1 - 극자외선 포토마스크들 상의 루테늄 산화물 환원을 위한 방법들 및 장치 - Google Patents

극자외선 포토마스크들 상의 루테늄 산화물 환원을 위한 방법들 및 장치

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Publication number
KR102959585B1
KR102959585B1 KR1020237032164A KR20237032164A KR102959585B1 KR 102959585 B1 KR102959585 B1 KR 102959585B1 KR 1020237032164 A KR1020237032164 A KR 1020237032164A KR 20237032164 A KR20237032164 A KR 20237032164A KR 102959585 B1 KR102959585 B1 KR 102959585B1
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KR
South Korea
Prior art keywords
photomask
euv
euv photomask
reducing
gas
Prior art date
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Application number
KR1020237032164A
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English (en)
Korean (ko)
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KR20230144645A (ko
Inventor
반치우 우
칼리드 마캄레
엘리야후 슬로모 다간
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20230144645A publication Critical patent/KR20230144645A/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020237032164A 2021-02-25 2022-02-08 극자외선 포토마스크들 상의 루테늄 산화물 환원을 위한 방법들 및 장치 Active KR102959585B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163153753P 2021-02-25 2021-02-25
US63/153,753 2021-02-25
PCT/US2022/015554 WO2022182510A1 (en) 2021-02-25 2022-02-08 Methods and apparatus for ruthenium oxide reduction on extreme ultraviolet photomasks

Publications (2)

Publication Number Publication Date
KR20230144645A KR20230144645A (ko) 2023-10-16
KR102959585B1 true KR102959585B1 (ko) 2026-04-29

Family

ID=83048389

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237032164A Active KR102959585B1 (ko) 2021-02-25 2022-02-08 극자외선 포토마스크들 상의 루테늄 산화물 환원을 위한 방법들 및 장치

Country Status (7)

Country Link
US (1) US20240118603A1 (enExample)
EP (1) EP4298479A4 (enExample)
JP (1) JP7583953B2 (enExample)
KR (1) KR102959585B1 (enExample)
CN (1) CN117043674A (enExample)
TW (1) TW202238249A (enExample)
WO (1) WO2022182510A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120345049A (zh) * 2022-12-12 2025-07-18 朗姆研究公司 处理工具中的气流控制
US20260099087A1 (en) * 2024-10-07 2026-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of manufacturing semiconductor device and extreme ultraviolet photolithography systems

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170017146A1 (en) 2015-07-13 2017-01-19 Applied Materials, Inc. Process for removing contamination on ruthenium surface

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101457338B (zh) 2003-02-14 2011-04-27 应用材料股份有限公司 利用含氢自由基清洁自生氧化物的方法和设备
US7547505B2 (en) * 2005-01-20 2009-06-16 Infineon Technologies Ag Methods of forming capping layers on reflective materials
KR101163221B1 (ko) * 2010-09-10 2012-07-11 에스케이하이닉스 주식회사 극자외선 광학 소자의 반사율을 회복시키는 방법 및 이를 이용한 세정 방법
CN110735181A (zh) * 2013-08-09 2020-01-31 应用材料公司 于外延生长之前预清洁基板表面的方法和设备
KR101976249B1 (ko) 2014-03-11 2019-05-07 시바우라 메카트로닉스 가부시끼가이샤 반사형 마스크의 세정 장치 및 반사형 마스크의 세정 방법
US20150376792A1 (en) * 2014-06-30 2015-12-31 Lam Research Corporation Atmospheric plasma apparatus for semiconductor processing
US9739913B2 (en) * 2014-07-11 2017-08-22 Applied Materials, Inc. Extreme ultraviolet capping layer and method of manufacturing and lithography thereof
KR102355875B1 (ko) 2017-12-18 2022-02-08 세키스이가가쿠 고교가부시키가이샤 표면 처리 방법 및 장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170017146A1 (en) 2015-07-13 2017-01-19 Applied Materials, Inc. Process for removing contamination on ruthenium surface

Also Published As

Publication number Publication date
EP4298479A1 (en) 2024-01-03
KR20230144645A (ko) 2023-10-16
WO2022182510A1 (en) 2022-09-01
TW202238249A (zh) 2022-10-01
JP7583953B2 (ja) 2024-11-14
JP2024507524A (ja) 2024-02-20
EP4298479A4 (en) 2025-06-25
US20240118603A1 (en) 2024-04-11
CN117043674A (zh) 2023-11-10

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