CN117043674A - 极紫外光光掩模上氧化钌还原的方法和装置 - Google Patents

极紫外光光掩模上氧化钌还原的方法和装置 Download PDF

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Publication number
CN117043674A
CN117043674A CN202280015706.8A CN202280015706A CN117043674A CN 117043674 A CN117043674 A CN 117043674A CN 202280015706 A CN202280015706 A CN 202280015706A CN 117043674 A CN117043674 A CN 117043674A
Authority
CN
China
Prior art keywords
photomask
euv
gas
euv photomask
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280015706.8A
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English (en)
Chinese (zh)
Inventor
吴半秋
哈立德·马哈姆雷
埃利亚胡·什洛莫·达甘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN117043674A publication Critical patent/CN117043674A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202280015706.8A 2021-02-25 2022-02-08 极紫外光光掩模上氧化钌还原的方法和装置 Pending CN117043674A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163153753P 2021-02-25 2021-02-25
US63/153,753 2021-02-25
PCT/US2022/015554 WO2022182510A1 (en) 2021-02-25 2022-02-08 Methods and apparatus for ruthenium oxide reduction on extreme ultraviolet photomasks

Publications (1)

Publication Number Publication Date
CN117043674A true CN117043674A (zh) 2023-11-10

Family

ID=83048389

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280015706.8A Pending CN117043674A (zh) 2021-02-25 2022-02-08 极紫外光光掩模上氧化钌还原的方法和装置

Country Status (7)

Country Link
US (1) US20240118603A1 (enExample)
EP (1) EP4298479A4 (enExample)
JP (1) JP7583953B2 (enExample)
KR (1) KR102959585B1 (enExample)
CN (1) CN117043674A (enExample)
TW (1) TW202238249A (enExample)
WO (1) WO2022182510A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120345049A (zh) * 2022-12-12 2025-07-18 朗姆研究公司 处理工具中的气流控制
US20260099087A1 (en) * 2024-10-07 2026-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of manufacturing semiconductor device and extreme ultraviolet photolithography systems

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101457338B (zh) 2003-02-14 2011-04-27 应用材料股份有限公司 利用含氢自由基清洁自生氧化物的方法和设备
US7547505B2 (en) * 2005-01-20 2009-06-16 Infineon Technologies Ag Methods of forming capping layers on reflective materials
KR101163221B1 (ko) * 2010-09-10 2012-07-11 에스케이하이닉스 주식회사 극자외선 광학 소자의 반사율을 회복시키는 방법 및 이를 이용한 세정 방법
CN110735181A (zh) * 2013-08-09 2020-01-31 应用材料公司 于外延生长之前预清洁基板表面的方法和设备
KR101976249B1 (ko) 2014-03-11 2019-05-07 시바우라 메카트로닉스 가부시끼가이샤 반사형 마스크의 세정 장치 및 반사형 마스크의 세정 방법
US20150376792A1 (en) * 2014-06-30 2015-12-31 Lam Research Corporation Atmospheric plasma apparatus for semiconductor processing
US9739913B2 (en) * 2014-07-11 2017-08-22 Applied Materials, Inc. Extreme ultraviolet capping layer and method of manufacturing and lithography thereof
US20170017146A1 (en) 2015-07-13 2017-01-19 Applied Materials, Inc. Process for removing contamination on ruthenium surface
KR102355875B1 (ko) 2017-12-18 2022-02-08 세키스이가가쿠 고교가부시키가이샤 표면 처리 방법 및 장치

Also Published As

Publication number Publication date
EP4298479A1 (en) 2024-01-03
KR20230144645A (ko) 2023-10-16
WO2022182510A1 (en) 2022-09-01
KR102959585B1 (ko) 2026-04-29
TW202238249A (zh) 2022-10-01
JP7583953B2 (ja) 2024-11-14
JP2024507524A (ja) 2024-02-20
EP4298479A4 (en) 2025-06-25
US20240118603A1 (en) 2024-04-11

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