JP2024501876A5 - - Google Patents

Info

Publication number
JP2024501876A5
JP2024501876A5 JP2023540529A JP2023540529A JP2024501876A5 JP 2024501876 A5 JP2024501876 A5 JP 2024501876A5 JP 2023540529 A JP2023540529 A JP 2023540529A JP 2023540529 A JP2023540529 A JP 2023540529A JP 2024501876 A5 JP2024501876 A5 JP 2024501876A5
Authority
JP
Japan
Prior art keywords
integrated circuit
layer
circuit according
metal
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023540529A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024501876A (ja
Filing date
Publication date
Priority claimed from US17/138,541 external-priority patent/US11854933B2/en
Application filed filed Critical
Publication of JP2024501876A publication Critical patent/JP2024501876A/ja
Publication of JP2024501876A5 publication Critical patent/JP2024501876A5/ja
Pending legal-status Critical Current

Links

JP2023540529A 2020-12-30 2021-12-28 熱伝導性ウェハ層 Pending JP2024501876A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/138,541 US11854933B2 (en) 2020-12-30 2020-12-30 Thermally conductive wafer layer
US17/138,541 2020-12-30
PCT/US2021/065266 WO2022146953A1 (en) 2020-12-30 2021-12-28 Thermally conductive wafer layer

Publications (2)

Publication Number Publication Date
JP2024501876A JP2024501876A (ja) 2024-01-16
JP2024501876A5 true JP2024501876A5 (enExample) 2024-12-16

Family

ID=82118338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023540529A Pending JP2024501876A (ja) 2020-12-30 2021-12-28 熱伝導性ウェハ層

Country Status (4)

Country Link
US (2) US11854933B2 (enExample)
EP (1) EP4272247B1 (enExample)
JP (1) JP2024501876A (enExample)
WO (1) WO2022146953A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11854933B2 (en) * 2020-12-30 2023-12-26 Texas Instruments Incorporated Thermally conductive wafer layer

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10233475A (ja) * 1996-12-16 1998-09-02 Sentan Zairyo:Kk シリコンウェハーと炭素材との複合材
US8586413B2 (en) * 2005-05-04 2013-11-19 Spansion Llc Multi-chip module having a support structure and method of manufacture
US7886662B2 (en) * 2006-12-19 2011-02-15 Palo Alto Research Center Incorporated Digital printing plate and system with electrostatically latched deformable membranes
US8531015B2 (en) 2009-03-26 2013-09-10 Stats Chippac, Ltd. Semiconductor device and method of forming a thin wafer without a carrier
US8426309B2 (en) * 2009-09-10 2013-04-23 Lockheed Martin Corporation Graphene nanoelectric device fabrication
US8450779B2 (en) * 2010-03-08 2013-05-28 International Business Machines Corporation Graphene based three-dimensional integrated circuit device
US20120141799A1 (en) * 2010-12-03 2012-06-07 Francis Kub Film on Graphene on a Substrate and Method and Devices Therefor
WO2013036278A1 (en) * 2011-09-06 2013-03-14 Nanotech Biomachines, Inc. Integrated sensing device and related methods
US8884310B2 (en) 2011-10-19 2014-11-11 Sunedison Semiconductor Limited (Uen201334164H) Direct formation of graphene on semiconductor substrates
US9102118B2 (en) * 2011-12-05 2015-08-11 International Business Machines Corporation Forming patterned graphene layers
US9263630B2 (en) * 2012-03-27 2016-02-16 Sumitomo Chemical Company, Limited Inorganic layer light-emitting device
US9305854B2 (en) 2012-08-21 2016-04-05 Stats Chippac, Ltd. Semiconductor device and method of forming RDL using UV-cured conductive ink over wafer level package
WO2014152509A1 (en) * 2013-03-15 2014-09-25 Solan, LLC Plasmonic device enhancements
JP6161554B2 (ja) * 2013-04-26 2017-07-12 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
US20150097261A1 (en) * 2013-10-04 2015-04-09 James M. Harris Interconnect system
DE102013111409B4 (de) * 2013-10-16 2019-12-05 Osram Oled Gmbh Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
US9562292B2 (en) * 2014-05-05 2017-02-07 The United States Of America, As Represented By The Secretary Of Commerce Photoactive article, process for making, and use of same
JP2015216199A (ja) * 2014-05-09 2015-12-03 新光電気工業株式会社 半導体装置、熱伝導部材及び半導体装置の製造方法
WO2015184473A1 (en) * 2014-05-30 2015-12-03 Advanced Green Innovations, LLC Hybrid graphene materials and methods of fabrication
US9496198B2 (en) * 2014-09-28 2016-11-15 Texas Instruments Incorporated Integration of backside heat spreader for thermal management
US9618474B2 (en) * 2014-12-18 2017-04-11 Edico Genome, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
US9548256B2 (en) * 2015-02-23 2017-01-17 Nxp Usa, Inc. Heat spreader and method for forming
EP3076436A1 (en) * 2015-03-30 2016-10-05 Nokia Technologies OY A method and apparatus for providing a transistor
US10116000B1 (en) * 2015-10-20 2018-10-30 New Jersey Institute Of Technology Fabrication of flexible conductive items and batteries using modified inks
DE102015118417A1 (de) * 2015-10-28 2017-05-04 Osram Oled Gmbh Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
CN105242437A (zh) * 2015-11-09 2016-01-13 深圳市华星光电技术有限公司 Pdlc显示装置的制作方法及pdlc显示装置
US20170309549A1 (en) * 2016-04-21 2017-10-26 Texas Instruments Incorporated Sintered Metal Flip Chip Joints
US10861763B2 (en) * 2016-11-26 2020-12-08 Texas Instruments Incorporated Thermal routing trench by additive processing
JP6927490B2 (ja) * 2017-05-31 2021-09-01 株式会社応用ナノ粒子研究所 放熱構造体
JP6912716B2 (ja) * 2017-08-10 2021-08-04 富士通株式会社 半導体装置及びその製造方法
US11031364B2 (en) * 2018-03-07 2021-06-08 Texas Instruments Incorporated Nanoparticle backside die adhesion layer
KR102139283B1 (ko) * 2018-08-29 2020-07-29 서울대학교산학협력단 플렉서블 그래핀 가스센서, 센서 어레이 및 그 제조 방법
KR102164795B1 (ko) * 2018-09-06 2020-10-13 삼성전자주식회사 팬-아웃 반도체 패키지
US10811543B2 (en) * 2018-12-26 2020-10-20 Texas Instruments Incorporated Semiconductor device with deep trench isolation and trench capacitor
US11694895B2 (en) * 2019-02-14 2023-07-04 The Government of the United States of America, as represented by the Secretarv of the Navy Method and use for low-temperature epitaxy and film texturing between a two-dimensional crystalline layer and metal film
US11721786B2 (en) * 2019-06-27 2023-08-08 Intel Corporation Micro light-emitting diode displays having color correction films applied thereto
US11171118B2 (en) * 2019-07-03 2021-11-09 Micron Technology, Inc. Semiconductor assemblies including thermal circuits and methods of manufacturing the same
JP7198238B2 (ja) * 2020-03-19 2022-12-28 株式会社東芝 二酸化炭素電解セル用電極触媒層、ならびにそれを具備する、電解セルおよび二酸化炭素電解用電解装置
US11854933B2 (en) * 2020-12-30 2023-12-26 Texas Instruments Incorporated Thermally conductive wafer layer

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