JP2024157940A5 - - Google Patents

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Publication number
JP2024157940A5
JP2024157940A5 JP2023072620A JP2023072620A JP2024157940A5 JP 2024157940 A5 JP2024157940 A5 JP 2024157940A5 JP 2023072620 A JP2023072620 A JP 2023072620A JP 2023072620 A JP2023072620 A JP 2023072620A JP 2024157940 A5 JP2024157940 A5 JP 2024157940A5
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JP
Japan
Prior art keywords
region
cell region
layer
conductivity type
impurity
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Pending
Application number
JP2023072620A
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English (en)
Japanese (ja)
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JP2024157940A (ja
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Publication date
Application filed filed Critical
Priority to JP2023072620A priority Critical patent/JP2024157940A/ja
Priority claimed from JP2023072620A external-priority patent/JP2024157940A/ja
Priority to CN202480027722.8A priority patent/CN121014274A/zh
Priority to PCT/JP2024/016351 priority patent/WO2024225406A1/ja
Publication of JP2024157940A publication Critical patent/JP2024157940A/ja
Publication of JP2024157940A5 publication Critical patent/JP2024157940A5/ja
Priority to US19/365,584 priority patent/US20260047154A1/en
Pending legal-status Critical Current

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JP2023072620A 2023-04-26 2023-04-26 炭化珪素半導体装置 Pending JP2024157940A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2023072620A JP2024157940A (ja) 2023-04-26 2023-04-26 炭化珪素半導体装置
CN202480027722.8A CN121014274A (zh) 2023-04-26 2024-04-25 碳化硅半导体装置
PCT/JP2024/016351 WO2024225406A1 (ja) 2023-04-26 2024-04-25 炭化珪素半導体装置
US19/365,584 US20260047154A1 (en) 2023-04-26 2025-10-22 Silicon carbide semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023072620A JP2024157940A (ja) 2023-04-26 2023-04-26 炭化珪素半導体装置

Publications (2)

Publication Number Publication Date
JP2024157940A JP2024157940A (ja) 2024-11-08
JP2024157940A5 true JP2024157940A5 (https=) 2025-04-02

Family

ID=93256607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023072620A Pending JP2024157940A (ja) 2023-04-26 2023-04-26 炭化珪素半導体装置

Country Status (4)

Country Link
US (1) US20260047154A1 (https=)
JP (1) JP2024157940A (https=)
CN (1) CN121014274A (https=)
WO (1) WO2024225406A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2006900B1 (en) * 2007-05-25 2020-11-18 Semiconductor Components Industries, LLC Deep trench isolation for power semiconductors
US8928066B2 (en) * 2013-02-04 2015-01-06 Infineon Technologies Austria Ag Integrated circuit with power and sense transistors
JP2016063107A (ja) * 2014-09-19 2016-04-25 トヨタ自動車株式会社 半導体装置
JP7257927B2 (ja) * 2019-09-19 2023-04-14 三菱電機株式会社 半導体装置
JP7425943B2 (ja) * 2019-12-12 2024-02-01 株式会社デンソー 炭化珪素半導体装置

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