JP2024081939A5 - - Google Patents

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Publication number
JP2024081939A5
JP2024081939A5 JP2022195543A JP2022195543A JP2024081939A5 JP 2024081939 A5 JP2024081939 A5 JP 2024081939A5 JP 2022195543 A JP2022195543 A JP 2022195543A JP 2022195543 A JP2022195543 A JP 2022195543A JP 2024081939 A5 JP2024081939 A5 JP 2024081939A5
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JP
Japan
Prior art keywords
trenches
region
semiconductor substrate
insulating film
gate insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022195543A
Other languages
English (en)
Japanese (ja)
Other versions
JP7852479B2 (ja
JP2024081939A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2022195543A priority Critical patent/JP7852479B2/ja
Priority claimed from JP2022195543A external-priority patent/JP7852479B2/ja
Priority to CN202380072975.2A priority patent/CN120167137A/zh
Priority to PCT/JP2023/034480 priority patent/WO2024122162A1/ja
Publication of JP2024081939A publication Critical patent/JP2024081939A/ja
Publication of JP2024081939A5 publication Critical patent/JP2024081939A5/ja
Priority to US19/229,613 priority patent/US20250301724A1/en
Application granted granted Critical
Publication of JP7852479B2 publication Critical patent/JP7852479B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2022195543A 2022-12-07 2022-12-07 スイッチング素子 Active JP7852479B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2022195543A JP7852479B2 (ja) 2022-12-07 2022-12-07 スイッチング素子
CN202380072975.2A CN120167137A (zh) 2022-12-07 2023-09-22 开关元件
PCT/JP2023/034480 WO2024122162A1 (ja) 2022-12-07 2023-09-22 スイッチング素子
US19/229,613 US20250301724A1 (en) 2022-12-07 2025-06-05 Switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022195543A JP7852479B2 (ja) 2022-12-07 2022-12-07 スイッチング素子

Publications (3)

Publication Number Publication Date
JP2024081939A JP2024081939A (ja) 2024-06-19
JP2024081939A5 true JP2024081939A5 (https=) 2025-01-24
JP7852479B2 JP7852479B2 (ja) 2026-04-28

Family

ID=91378718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022195543A Active JP7852479B2 (ja) 2022-12-07 2022-12-07 スイッチング素子

Country Status (4)

Country Link
US (1) US20250301724A1 (https=)
JP (1) JP7852479B2 (https=)
CN (1) CN120167137A (https=)
WO (1) WO2024122162A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163351A (ja) 2001-11-27 2003-06-06 Nec Kansai Ltd 絶縁ゲート型半導体装置およびその製造方法
JP5526496B2 (ja) 2008-06-02 2014-06-18 サンケン電気株式会社 電界効果半導体装置及びその製造方法
JP5531787B2 (ja) 2010-05-31 2014-06-25 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP5983415B2 (ja) 2013-01-15 2016-08-31 住友電気工業株式会社 炭化珪素半導体装置
JP7092129B2 (ja) 2017-07-04 2022-06-28 住友電気工業株式会社 炭化珪素半導体装置
JP7326991B2 (ja) 2019-08-22 2023-08-16 株式会社デンソー スイッチング素子
JP7288827B2 (ja) 2019-09-06 2023-06-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
EP3881360B1 (en) 2019-11-08 2022-05-04 Hitachi Energy Switzerland AG Insulated gate bipolar transistor

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