JP7852479B2 - スイッチング素子 - Google Patents

スイッチング素子

Info

Publication number
JP7852479B2
JP7852479B2 JP2022195543A JP2022195543A JP7852479B2 JP 7852479 B2 JP7852479 B2 JP 7852479B2 JP 2022195543 A JP2022195543 A JP 2022195543A JP 2022195543 A JP2022195543 A JP 2022195543A JP 7852479 B2 JP7852479 B2 JP 7852479B2
Authority
JP
Japan
Prior art keywords
region
electric field
trench
field relaxation
outer peripheral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022195543A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024081939A5 (https=
JP2024081939A (ja
Inventor
拓真 片野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2022195543A priority Critical patent/JP7852479B2/ja
Priority to CN202380072975.2A priority patent/CN120167137A/zh
Priority to PCT/JP2023/034480 priority patent/WO2024122162A1/ja
Publication of JP2024081939A publication Critical patent/JP2024081939A/ja
Publication of JP2024081939A5 publication Critical patent/JP2024081939A5/ja
Priority to US19/229,613 priority patent/US20250301724A1/en
Application granted granted Critical
Publication of JP7852479B2 publication Critical patent/JP7852479B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
JP2022195543A 2022-12-07 2022-12-07 スイッチング素子 Active JP7852479B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2022195543A JP7852479B2 (ja) 2022-12-07 2022-12-07 スイッチング素子
CN202380072975.2A CN120167137A (zh) 2022-12-07 2023-09-22 开关元件
PCT/JP2023/034480 WO2024122162A1 (ja) 2022-12-07 2023-09-22 スイッチング素子
US19/229,613 US20250301724A1 (en) 2022-12-07 2025-06-05 Switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022195543A JP7852479B2 (ja) 2022-12-07 2022-12-07 スイッチング素子

Publications (3)

Publication Number Publication Date
JP2024081939A JP2024081939A (ja) 2024-06-19
JP2024081939A5 JP2024081939A5 (https=) 2025-01-24
JP7852479B2 true JP7852479B2 (ja) 2026-04-28

Family

ID=91378718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022195543A Active JP7852479B2 (ja) 2022-12-07 2022-12-07 スイッチング素子

Country Status (4)

Country Link
US (1) US20250301724A1 (https=)
JP (1) JP7852479B2 (https=)
CN (1) CN120167137A (https=)
WO (1) WO2024122162A1 (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163351A (ja) 2001-11-27 2003-06-06 Nec Kansai Ltd 絶縁ゲート型半導体装置およびその製造方法
JP2009295641A (ja) 2008-06-02 2009-12-17 Sanken Electric Co Ltd 電界効果半導体装置及びその製造方法
JP2011253837A (ja) 2010-05-31 2011-12-15 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2014138026A (ja) 2013-01-15 2014-07-28 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
WO2019008884A1 (ja) 2017-07-04 2019-01-10 住友電気工業株式会社 炭化珪素半導体装置
JP2021034528A (ja) 2019-08-22 2021-03-01 株式会社デンソー スイッチング素子
JP2021044289A (ja) 2019-09-06 2021-03-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2022547745A (ja) 2019-11-08 2022-11-15 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト 絶縁ゲートバイポーラトランジスタ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163351A (ja) 2001-11-27 2003-06-06 Nec Kansai Ltd 絶縁ゲート型半導体装置およびその製造方法
JP2009295641A (ja) 2008-06-02 2009-12-17 Sanken Electric Co Ltd 電界効果半導体装置及びその製造方法
JP2011253837A (ja) 2010-05-31 2011-12-15 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2014138026A (ja) 2013-01-15 2014-07-28 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
WO2019008884A1 (ja) 2017-07-04 2019-01-10 住友電気工業株式会社 炭化珪素半導体装置
JP2021034528A (ja) 2019-08-22 2021-03-01 株式会社デンソー スイッチング素子
JP2021044289A (ja) 2019-09-06 2021-03-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2022547745A (ja) 2019-11-08 2022-11-15 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト 絶縁ゲートバイポーラトランジスタ

Also Published As

Publication number Publication date
CN120167137A (zh) 2025-06-17
WO2024122162A1 (ja) 2024-06-13
US20250301724A1 (en) 2025-09-25
JP2024081939A (ja) 2024-06-19

Similar Documents

Publication Publication Date Title
CN109638069B (zh) 半导体装置
CN107180864B (zh) 开关元件
US9966460B2 (en) Switching device
CN107180863B (zh) 开关元件
US11888057B2 (en) Semiconductor device
JP7343315B2 (ja) 炭化ケイ素半導体装置
JP2019087611A (ja) スイッチング素子とその製造方法
JP7694816B2 (ja) 半導体装置とその製造方法
JP2023023389A (ja) 電界効果トランジスタとその製造方法
JP7487692B2 (ja) 電界効果トランジスタ
JP7147510B2 (ja) スイッチング素子
JP7852479B2 (ja) スイッチング素子
JP7643833B2 (ja) スイッチング素子
JP7326991B2 (ja) スイッチング素子
JP7853248B2 (ja) 電界効果トランジスタ
JP7717010B2 (ja) 半導体装置
JP2024072452A (ja) 半導体装置
JP7352151B2 (ja) スイッチング素子
JP7359012B2 (ja) スイッチング素子
JP7783153B2 (ja) 半導体装置
JP7827117B2 (ja) 半導体装置
JP7832092B2 (ja) スイッチング素子
JP7741042B2 (ja) 半導体装置
JP2024085757A (ja) 半導体装置
JP2025021163A (ja) 電界効果トランジスタ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250116

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250303

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20260317

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20260330