JP2024011954A5 - - Google Patents

Info

Publication number
JP2024011954A5
JP2024011954A5 JP2022114323A JP2022114323A JP2024011954A5 JP 2024011954 A5 JP2024011954 A5 JP 2024011954A5 JP 2022114323 A JP2022114323 A JP 2022114323A JP 2022114323 A JP2022114323 A JP 2022114323A JP 2024011954 A5 JP2024011954 A5 JP 2024011954A5
Authority
JP
Japan
Prior art keywords
semiconductor layer
disposed
semiconductor device
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022114323A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024011954A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2022114323A priority Critical patent/JP2024011954A/ja
Priority claimed from JP2022114323A external-priority patent/JP2024011954A/ja
Priority to EP23180893.2A priority patent/EP4307379A1/en
Priority to KR1020230081587A priority patent/KR20240010401A/ko
Priority to US18/345,012 priority patent/US20240021648A1/en
Priority to TW112124698A priority patent/TWI922815B/zh
Priority to CN202310847703.7A priority patent/CN117410296A/zh
Publication of JP2024011954A publication Critical patent/JP2024011954A/ja
Publication of JP2024011954A5 publication Critical patent/JP2024011954A5/ja
Pending legal-status Critical Current

Links

JP2022114323A 2022-07-15 2022-07-15 半導体装置および半導体装置の製造方法 Pending JP2024011954A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2022114323A JP2024011954A (ja) 2022-07-15 2022-07-15 半導体装置および半導体装置の製造方法
EP23180893.2A EP4307379A1 (en) 2022-07-15 2023-06-22 Semiconductor device
KR1020230081587A KR20240010401A (ko) 2022-07-15 2023-06-26 반도체 장치
US18/345,012 US20240021648A1 (en) 2022-07-15 2023-06-30 Semiconductor device
TW112124698A TWI922815B (zh) 2022-07-15 2023-07-03 半導體裝置
CN202310847703.7A CN117410296A (zh) 2022-07-15 2023-07-11 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022114323A JP2024011954A (ja) 2022-07-15 2022-07-15 半導体装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2024011954A JP2024011954A (ja) 2024-01-25
JP2024011954A5 true JP2024011954A5 (https=) 2025-07-16

Family

ID=86942147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022114323A Pending JP2024011954A (ja) 2022-07-15 2022-07-15 半導体装置および半導体装置の製造方法

Country Status (5)

Country Link
US (1) US20240021648A1 (https=)
EP (1) EP4307379A1 (https=)
JP (1) JP2024011954A (https=)
KR (1) KR20240010401A (https=)
CN (1) CN117410296A (https=)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012033894A (ja) * 2010-06-30 2012-02-16 Canon Inc 固体撮像装置
US20120193785A1 (en) * 2011-02-01 2012-08-02 Megica Corporation Multichip Packages
US9674470B2 (en) * 2014-04-11 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and method for driving electronic device
JP2016035961A (ja) * 2014-08-01 2016-03-17 株式会社東芝 半導体装置とその製造方法
JP6861471B2 (ja) 2015-06-12 2021-04-21 キヤノン株式会社 撮像装置およびその製造方法ならびにカメラ
KR102473664B1 (ko) * 2016-01-19 2022-12-02 삼성전자주식회사 Tsv 구조체를 가진 다중 적층 소자
JP6779825B2 (ja) * 2017-03-30 2020-11-04 キヤノン株式会社 半導体装置および機器
CN114628425A (zh) * 2017-05-26 2022-06-14 株式会社半导体能源研究所 摄像装置及电子设备
US11244978B2 (en) * 2018-10-17 2022-02-08 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment including the same
KR102742350B1 (ko) 2018-11-21 2024-12-16 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자
TWI904094B (zh) * 2019-06-26 2025-11-11 日商索尼半導體解決方案公司 攝像裝置
US11605665B2 (en) * 2019-10-25 2023-03-14 Canon Kabushiki Kaisha Semiconductor apparatus and method for producing semiconductor apparatus
KR20230091873A (ko) * 2020-10-23 2023-06-23 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치 및 수광 소자
US12396272B2 (en) * 2021-01-18 2025-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Stilted pad structure
KR20230039137A (ko) * 2021-09-13 2023-03-21 삼성전자주식회사 이미지 센서

Similar Documents

Publication Publication Date Title
CN102044549B (zh) 固态图像捕捉设备及其制造方法
US7727831B2 (en) Semiconductor device
JP6964461B2 (ja) 半導体装置
JP4746639B2 (ja) 半導体デバイス
CN100576565C (zh) 绝缘栅型半导体装置及其制造方法
CN104425531A (zh) 半导体器件及其制造方法
CN101826543B (zh) 固态图像拍摄设备及其制造方法
JP6463338B2 (ja) 半導体装置
US10141363B2 (en) Semiconductor device and method for manufacturing same
CN101211940B (zh) Cmos图像传感器及其制造方法
KR20170087581A (ko) 이미지 센서
JP2020181953A (ja) 半導体装置及びその製造方法
JP4791015B2 (ja) 縦型mosfet
KR101075709B1 (ko) 메사형 반도체 장치 및 그 제조 방법
KR20020059469A (ko) 기판과 컨택 패드간의 컨택 저항을 줄인 컨택 구조체 및그 형성방법
TW201029169A (en) Image sensor and method for manufacturing the same
JP2024011954A5 (https=)
JP4768889B1 (ja) 画像撮像デバイス及びその製造方法
CN100454565C (zh) 半导体器件及制造半导体器件的方法
TWI857836B (zh) 垂直電荷轉移成像感測器及其製作方法
CN117334707A (zh) 垂直电荷转移成像传感器及其制造方法
US10290728B2 (en) Semiconductor device and manufacturing method thereof
KR102645312B1 (ko) 후면 조사형 이미지 센서 및 그 제조 방법
JP6362373B2 (ja) 光電変換装置の製造方法
CN120091641A (zh) 垂直电荷转移成像传感器件及其制作方法