CN117410296A - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN117410296A
CN117410296A CN202310847703.7A CN202310847703A CN117410296A CN 117410296 A CN117410296 A CN 117410296A CN 202310847703 A CN202310847703 A CN 202310847703A CN 117410296 A CN117410296 A CN 117410296A
Authority
CN
China
Prior art keywords
semiconductor layer
main surface
semiconductor
region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310847703.7A
Other languages
English (en)
Chinese (zh)
Inventor
石野英明
山口润
丹下勉
原拓也
小林大祐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN117410296A publication Critical patent/CN117410296A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202310847703.7A 2022-07-15 2023-07-11 半导体装置 Pending CN117410296A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-114323 2022-07-15
JP2022114323A JP2024011954A (ja) 2022-07-15 2022-07-15 半導体装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN117410296A true CN117410296A (zh) 2024-01-16

Family

ID=86942147

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310847703.7A Pending CN117410296A (zh) 2022-07-15 2023-07-11 半导体装置

Country Status (5)

Country Link
US (1) US20240021648A1 (https=)
EP (1) EP4307379A1 (https=)
JP (1) JP2024011954A (https=)
KR (1) KR20240010401A (https=)
CN (1) CN117410296A (https=)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012033894A (ja) * 2010-06-30 2012-02-16 Canon Inc 固体撮像装置
US20120193785A1 (en) * 2011-02-01 2012-08-02 Megica Corporation Multichip Packages
US9674470B2 (en) * 2014-04-11 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and method for driving electronic device
JP2016035961A (ja) * 2014-08-01 2016-03-17 株式会社東芝 半導体装置とその製造方法
JP6861471B2 (ja) 2015-06-12 2021-04-21 キヤノン株式会社 撮像装置およびその製造方法ならびにカメラ
KR102473664B1 (ko) * 2016-01-19 2022-12-02 삼성전자주식회사 Tsv 구조체를 가진 다중 적층 소자
JP6779825B2 (ja) * 2017-03-30 2020-11-04 キヤノン株式会社 半導体装置および機器
CN114628425A (zh) * 2017-05-26 2022-06-14 株式会社半导体能源研究所 摄像装置及电子设备
US11244978B2 (en) * 2018-10-17 2022-02-08 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment including the same
KR102742350B1 (ko) 2018-11-21 2024-12-16 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자
TWI904094B (zh) * 2019-06-26 2025-11-11 日商索尼半導體解決方案公司 攝像裝置
US11605665B2 (en) * 2019-10-25 2023-03-14 Canon Kabushiki Kaisha Semiconductor apparatus and method for producing semiconductor apparatus
KR20230091873A (ko) * 2020-10-23 2023-06-23 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치 및 수광 소자
US12396272B2 (en) * 2021-01-18 2025-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Stilted pad structure
KR20230039137A (ko) * 2021-09-13 2023-03-21 삼성전자주식회사 이미지 센서

Also Published As

Publication number Publication date
KR20240010401A (ko) 2024-01-23
JP2024011954A (ja) 2024-01-25
EP4307379A1 (en) 2024-01-17
US20240021648A1 (en) 2024-01-18
TW202405925A (zh) 2024-02-01

Similar Documents

Publication Publication Date Title
CN102157537B (zh) 固体摄像器件及其制造方法、电子装置和半导体器件
JP5696081B2 (ja) 固体撮像装置
US8115267B2 (en) Semiconductor device and fabrication method of the same
US9324744B2 (en) Solid-state image sensor having a trench and method of manufacturing the same
TWI531053B (zh) 半導體裝置與其形成方法與影像感測裝置
US11742372B2 (en) Semiconductor device and method for manufacturing semiconductor device
US8653620B2 (en) Back side illumination type solid state imaging device and method of manufacturing the same
US20200343280A1 (en) Semiconductor apparatus and equipment
JP2015041677A (ja) 半導体装置およびその製造方法
JP2015032663A (ja) 固体撮像装置
WO2021084959A1 (ja) 撮像装置及び電子機器
CN104272720A (zh) 半导体装置、半导体装置的制造方法、半导体晶片和电子设备
JP2009065162A (ja) イメージセンサ及びその製造方法
KR20140028792A (ko) 반도체 소자 및 그 제조 방법
JP2017216480A (ja) 半導体装置およびその製造方法
US8222708B2 (en) Image sensor and method of fabricating the same
JP7140718B2 (ja) 固体撮像装置および固体撮像装置の製造方法
KR101053761B1 (ko) 이미지 센서의 제조 방법
KR101116574B1 (ko) 이미지 센서의 제조 방법
CN117410296A (zh) 半导体装置
TW201803100A (zh) 半導體裝置及其製造方法
JP7504834B2 (ja) 半導体装置および半導体装置の製造方法
US20250015014A1 (en) Semiconductor device
US20240014243A1 (en) Highly integrated image sensors using inter-substrate wiring structures
KR20100078163A (ko) 이미지 센서 및 이의 제조 방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination