JP2023534606A5 - - Google Patents

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Publication number
JP2023534606A5
JP2023534606A5 JP2022575675A JP2022575675A JP2023534606A5 JP 2023534606 A5 JP2023534606 A5 JP 2023534606A5 JP 2022575675 A JP2022575675 A JP 2022575675A JP 2022575675 A JP2022575675 A JP 2022575675A JP 2023534606 A5 JP2023534606 A5 JP 2023534606A5
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JP
Japan
Prior art keywords
manufacturing
solar cell
heating
perovskite solar
heating device
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JP2022575675A
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English (en)
Japanese (ja)
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JP2023534606A (ja
JP7692220B2 (ja
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Priority claimed from PCT/IB2021/054618 external-priority patent/WO2021250499A1/en
Publication of JP2023534606A publication Critical patent/JP2023534606A/ja
Publication of JP2023534606A5 publication Critical patent/JP2023534606A5/ja
Application granted granted Critical
Publication of JP7692220B2 publication Critical patent/JP7692220B2/ja
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JP2022575675A 2020-06-08 2021-05-27 ペロブスカイト太陽電池モジュールのための高速ハイブリッドcvd Active JP7692220B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063036068P 2020-06-08 2020-06-08
US63/036,068 2020-06-08
PCT/IB2021/054618 WO2021250499A1 (en) 2020-06-08 2021-05-27 Rapid hybrid chemical vapor deposition for perovskite solar modules

Publications (3)

Publication Number Publication Date
JP2023534606A JP2023534606A (ja) 2023-08-10
JP2023534606A5 true JP2023534606A5 (https=) 2024-06-04
JP7692220B2 JP7692220B2 (ja) 2025-06-13

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JP2022575675A Active JP7692220B2 (ja) 2020-06-08 2021-05-27 ペロブスカイト太陽電池モジュールのための高速ハイブリッドcvd

Country Status (5)

Country Link
US (1) US20210383978A1 (https=)
EP (1) EP4143363A1 (https=)
JP (1) JP7692220B2 (https=)
CN (1) CN115768917A (https=)
WO (1) WO2021250499A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114540771B (zh) * 2022-03-04 2022-12-20 浙江大学 一种纯无机铅卤钙钛矿吸收层及其制备方法和应用
JP2025075103A (ja) * 2022-03-28 2025-05-15 株式会社カネカ ペロブスカイト薄膜太陽電池の製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584811B2 (ja) 1978-10-31 1983-01-27 富士通株式会社 半導体装置の製造方法
JPS59163820A (ja) * 1983-03-09 1984-09-14 Fujitsu Ltd 化学気相成長装置
US5259883A (en) * 1988-02-16 1993-11-09 Kabushiki Kaisha Toshiba Method of thermally processing semiconductor wafers and an apparatus therefor
JPH05222536A (ja) * 1992-02-07 1993-08-31 Fuji Electric Co Ltd Cvd膜の成膜方法とcvd装置
JPH0637023A (ja) * 1992-07-14 1994-02-10 Nippon Steel Corp 減圧ホットウォールcvd装置
JP2001288571A (ja) 2000-01-31 2001-10-19 Canon Inc 真空処理装置および真空処理方法
JP4035298B2 (ja) * 2001-07-18 2008-01-16 キヤノン株式会社 プラズマ処理方法、半導体装置の製造方法および半導体装置
KR101353334B1 (ko) 2006-11-22 2014-02-18 소이텍 갈륨 질화물 증착에서의 반응 가스 감소
EP2579298B1 (en) 2010-06-04 2020-07-08 Shin-Etsu Chemical Co., Ltd. Heat-treatment furnace
US20130344246A1 (en) * 2012-06-21 2013-12-26 Xuesong Li Dual-Chamber Reactor for Chemical Vapor Deposition
JP6255267B2 (ja) 2014-02-06 2017-12-27 株式会社日立国際電気 基板処理装置、加熱装置、天井断熱体及び半導体装置の製造方法
KR101869212B1 (ko) * 2014-08-21 2018-06-19 각코호진 오키나와가가쿠기쥬츠다이가쿠인 다이가쿠가쿠엔 페로브스카이트 필름 제작을 위한 저압 화학 증착에 기초한 시스템 및 방법
CN107785488A (zh) * 2016-08-25 2018-03-09 杭州纤纳光电科技有限公司 钙钛矿薄膜的低压化学沉积的设备及其使用方法和应用
CN108677169B (zh) * 2018-05-17 2019-06-25 天津理工大学 一种有机铵金属卤化物薄膜的制备装置及制备和表征方法
CN108847455A (zh) 2018-06-12 2018-11-20 北京工业大学 一种生长钙钛矿薄膜的方法
GB2577492B (en) 2018-09-24 2021-02-10 Oxford Photovoltaics Ltd Method of forming a crystalline or polycrystalline layer of an organic-inorganic metal halide perovskite
US12243740B2 (en) 2018-11-21 2025-03-04 Cubicpv Inc. Enhanced perovskite materials for photovoltaic devices
CN109796977A (zh) * 2019-03-20 2019-05-24 清华大学 一种铯碘铅发光材料的制备方法

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