JP2023516865A - パルスバイアスを使用したオーバーハングの低減 - Google Patents
パルスバイアスを使用したオーバーハングの低減 Download PDFInfo
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- 230000001603 reducing effect Effects 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 238000000034 method Methods 0.000 claims abstract description 57
- 239000000463 material Substances 0.000 claims description 85
- 238000005240 physical vapour deposition Methods 0.000 claims description 30
- 238000004544 sputter deposition Methods 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 16
- 230000006378 damage Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000009467 reduction Effects 0.000 claims description 2
- 230000008569 process Effects 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 239000011231 conductive filler Substances 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 150000002739 metals Chemical group 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 241000252073 Anguilliformes Species 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 235000008429 bread Nutrition 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000001227 electron beam curing Methods 0.000 description 1
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000000640 hydroxylating effect Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- -1 ruthenium nitride Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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Abstract
Description
Claims (20)
- 物理的気相堆積の方法であって、
物理的気相堆積(PVD)チャンバ内の材料ターゲットをスパッタリングして、頂面から底面まで深さを延ばす特徴を含む基板面に材料層を形成することであり、前記特徴が、第1の側壁および第2の側壁によって画定された開口幅を前記基板面に有し、前記材料層の前記頂面における横方向厚さが、前記特徴内の前記第1の側壁または前記第2の側壁上の厚さより大きい、形成することと、
低いエネルギーのDCバイアスで前記基板面にバイアスをかけることによって、前記基板面に追加の材料層を堆積させることと、
高いエネルギーのDCバイアスで前記基板面にバイアスをかけることによって、前記基板面から前記材料層をエッチングすることと、
前記低いエネルギーおよび前記高いエネルギーを所定の周波数で交互に繰り返して、前記基板面における前記横方向厚さと前記特徴内の前記横方向厚さとの間の差を低減させることとを含む、方法。 - 前記基板が実質的に損傷されない、請求項1に記載の方法。
- 前記DCバイアスのデューティサイクルが約50%である、請求項2に記載の方法。
- 前記材料ターゲットが銅を含む、請求項1に記載の方法。
- 前記低いエネルギーが約50W~約100Wの範囲内である、請求項1に記載の方法。
- 前記高いエネルギーが約1000W~約3000Wの範囲内である、請求項1に記載の方法。
- 前記所定の周波数が約1Hz~約10kHzの範囲内である、請求項1に記載の方法。
- 前記材料ターゲットをスパッタリングすることが、約15nmの厚さを有する材料層を前記基板面に形成する、請求項1に記載の方法。
- 前記低いエネルギーおよび前記高いエネルギーを交互に繰り返すことが、約6nmの厚さを有する材料層を前記基板面に形成する、請求項1に記載の方法。
- 前記材料ターゲットをスパッタリングする前に、前記特徴の前記開口幅が約10nm~約20nmの範囲内である、請求項1に記載の方法。
- 前記材料ターゲットをスパッタリングする前に、前記特徴の前記開口幅が約10nm~約20nmの範囲内であり、前記材料ターゲットをスパッタリングする結果、約15nmの厚さを有する材料層が前記基板面に形成され、前記低いエネルギーおよび前記高いエネルギーを交互に繰り返すことで、約6nmの厚さを有する材料層を前記基板面に形成し、前記材料ターゲットをスパッタリングし、前記低いエネルギーおよび前記高いエネルギーを交互に繰り返した後、前記特徴の前記開口幅が約7nm以上である、請求項1に記載の方法。
- 前記基板面における前記横方向厚さと前記特徴内の前記横方向厚さとの間の前記差を低減させた後、前記特徴内に導電性充填材料を堆積させることをさらに含む、請求項1に記載の方法。
- オーバーハング低減の方法であって、
材料ターゲットを有する物理的気相堆積(PVD)チャンバ内のDCバイアスで材料層を含む基板にバイアスをかけることであり、前記基板が、基板面から底面まで深さを延ばす特徴を含み、前記特徴が、第1の側壁および第2の側壁によって画定された開口幅を前記基板面に有し、前記材料層の前記基板面における横方向厚さが、前記特徴内の横方向厚さより大きい、バイアスをかけることと、
低エネルギーのバイアスおよび高エネルギーのバイアスを所定の周波数で交互に繰り返して、前記基板面における前記横方向厚さと前記特徴内の前記横方向厚さとの間の差を低減させることとを含む、方法。 - 前記基板にバイアスをかけ、低エネルギーのバイアスおよび高エネルギーのバイアスを交互にすることによって、前記基板が実質的に損傷されない、請求項13に記載の方法。
- 前記DCバイアスのデューティサイクルが約50%である、請求項14に記載の方法。
- 前記材料層が銅を含む、請求項13に記載の方法。
- 前記低エネルギーのバイアスが約50W~約100Wの範囲内である、請求項13に記載の方法。
- 前記高エネルギーのバイアスが約1000W~約3000Wの範囲内である、請求項13に記載の方法。
- 前記所定の周波数が約1Hz~約10kHzの範囲内である、請求項13に記載の方法。
- 銅ライナを堆積させる方法であって、
物理的気相堆積(PVD)チャンバ内の銅ターゲットをスパッタリングして、基板面から底面まで深さを延ばす特徴を含む前記基板面に銅層を形成することであり、前記特徴が、第1の側壁および第2の側壁によって画定された開口幅を前記基板面に有し、前記銅層の前記基板面における横方向厚さが、前記特徴内の横方向厚さより大きい、形成することと、
約50W~約100Wの範囲内の低いエネルギーのDCバイアスで前記基板面にバイアスをかけることによって、前記基板面に追加の銅層を堆積させることと、
約1000W~約1500Wの範囲内の高いエネルギーのDCバイアスで前記基板面にバイアスをかけることによって、前記基板面から前記銅層をエッチングすることと、
前記低いエネルギーおよび前記高いエネルギーを約1kHzの所定の周波数で交互に繰り返して、前記基板面における前記横方向厚さと前記特徴内の前記横方向厚さとの間の差を低減させることとを含む、方法。
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US7247252B2 (en) * | 2002-06-20 | 2007-07-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of avoiding plasma arcing during RIE etching |
US7202172B2 (en) * | 2003-12-05 | 2007-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Microelectronic device having disposable spacer |
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US8846451B2 (en) * | 2010-07-30 | 2014-09-30 | Applied Materials, Inc. | Methods for depositing metal in high aspect ratio features |
US9194045B2 (en) * | 2012-04-03 | 2015-11-24 | Novellus Systems, Inc. | Continuous plasma and RF bias to regulate damage in a substrate processing system |
US20140046475A1 (en) * | 2012-08-09 | 2014-02-13 | Applied Materials, Inc. | Method and apparatus deposition process synchronization |
US11162170B2 (en) * | 2014-02-06 | 2021-11-02 | Applied Materials, Inc. | Methods for reducing material overhang in a feature of a substrate |
US9978639B2 (en) * | 2015-10-27 | 2018-05-22 | Applied Materials, Inc. | Methods for reducing copper overhang in a feature of a substrate |
US10312065B2 (en) * | 2016-07-20 | 2019-06-04 | Applied Materials, Inc. | Physical vapor deposition (PVD) plasma energy control per dynamic magnetron control |
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