JP2023516074A5 - - Google Patents

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Publication number
JP2023516074A5
JP2023516074A5 JP2022552715A JP2022552715A JP2023516074A5 JP 2023516074 A5 JP2023516074 A5 JP 2023516074A5 JP 2022552715 A JP2022552715 A JP 2022552715A JP 2022552715 A JP2022552715 A JP 2022552715A JP 2023516074 A5 JP2023516074 A5 JP 2023516074A5
Authority
JP
Japan
Prior art keywords
gas
pulse
pulses
purge
reactivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022552715A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023516074A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2021/020748 external-priority patent/WO2021178593A1/en
Publication of JP2023516074A publication Critical patent/JP2023516074A/ja
Publication of JP2023516074A5 publication Critical patent/JP2023516074A5/ja
Pending legal-status Critical Current

Links

JP2022552715A 2020-03-04 2021-03-03 反応性ガスのパルス送給 Pending JP2023516074A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IN202031009211 2020-03-04
IN202031009211 2020-03-04
PCT/US2021/020748 WO2021178593A1 (en) 2020-03-04 2021-03-03 Reactant gas pulse delivery

Publications (2)

Publication Number Publication Date
JP2023516074A JP2023516074A (ja) 2023-04-17
JP2023516074A5 true JP2023516074A5 (enExample) 2024-03-11

Family

ID=77613743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022552715A Pending JP2023516074A (ja) 2020-03-04 2021-03-03 反応性ガスのパルス送給

Country Status (6)

Country Link
US (1) US20230130557A1 (enExample)
JP (1) JP2023516074A (enExample)
KR (1) KR20220149595A (enExample)
CN (1) CN115210404A (enExample)
TW (1) TWI906263B (enExample)
WO (1) WO2021178593A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
KR102828798B1 (ko) 2018-12-05 2025-07-02 램 리써치 코포레이션 보이드 프리 (void free) 저응력 (low stress) 충진
US11972952B2 (en) 2018-12-14 2024-04-30 Lam Research Corporation Atomic layer deposition on 3D NAND structures
KR20210117343A (ko) 2019-02-13 2021-09-28 램 리써치 코포레이션 억제 제어를 사용한 텅스텐 피처 충진
JP2022522226A (ja) 2019-04-11 2022-04-14 ラム リサーチ コーポレーション 高ステップカバレッジのタングステン堆積
KR20210158419A (ko) 2019-05-22 2021-12-30 램 리써치 코포레이션 핵생성-프리 텅스텐 증착
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition
US20240162089A1 (en) * 2022-11-11 2024-05-16 Applied Materials, Inc. Surface depassivation with thermal etch after nitrogen radical treatment
USD1117120S1 (en) * 2023-07-07 2026-03-10 Lam Research Corporation Pedestal for a substrate processing system
USD1117121S1 (en) * 2023-07-07 2026-03-10 Lam Research Corporation Pedestal for a substrate processing system
KR20260017906A (ko) 2024-07-30 2026-02-06 홍진서 비스포크 인솔
CN120007962B (zh) * 2025-04-17 2025-06-20 上海邦芯半导体科技有限公司 具有异常监控的工艺进流系统、监控方法及工艺设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6613656B2 (en) * 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US7939455B2 (en) * 2006-09-29 2011-05-10 Tokyo Electron Limited Method for forming strained silicon nitride films and a device containing such films
US8592005B2 (en) * 2011-04-26 2013-11-26 Asm Japan K.K. Atomic layer deposition for controlling vertical film growth
US10381266B2 (en) * 2012-03-27 2019-08-13 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9997405B2 (en) * 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
JP6280487B2 (ja) * 2014-10-16 2018-02-14 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US10468264B2 (en) * 2016-07-04 2019-11-05 Samsung Electronics Co., Ltd. Method of fabricating semiconductor device
US10573522B2 (en) * 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process

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