JP2023157671A5 - - Google Patents
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- JP2023157671A5 JP2023157671A5 JP2022067732A JP2022067732A JP2023157671A5 JP 2023157671 A5 JP2023157671 A5 JP 2023157671A5 JP 2022067732 A JP2022067732 A JP 2022067732A JP 2022067732 A JP2022067732 A JP 2022067732A JP 2023157671 A5 JP2023157671 A5 JP 2023157671A5
- Authority
- JP
- Japan
- Prior art keywords
- trench
- impurity region
- depth
- emitter electrode
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022067732A JP7788924B2 (ja) | 2022-04-15 | 2022-04-15 | 半導体装置およびその製造方法 |
| US18/152,593 US20230335604A1 (en) | 2022-04-15 | 2023-01-10 | Semiconductor device and method of manufacturing the same |
| CN202310222416.7A CN116913956A (zh) | 2022-04-15 | 2023-03-09 | 半导体器件及其制造方法 |
| DE102023202818.2A DE102023202818A1 (de) | 2022-04-15 | 2023-03-28 | Halbleitervorrichtung und verfahren zu deren herstellung |
| TW112113208A TW202343792A (zh) | 2022-04-15 | 2023-04-10 | 半導體裝置及其製造方法 |
| KR1020230047976A KR20230148111A (ko) | 2022-04-15 | 2023-04-12 | 반도체 장치 및 그 제조 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022067732A JP7788924B2 (ja) | 2022-04-15 | 2022-04-15 | 半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023157671A JP2023157671A (ja) | 2023-10-26 |
| JP2023157671A5 true JP2023157671A5 (https=) | 2024-09-30 |
| JP7788924B2 JP7788924B2 (ja) | 2025-12-19 |
Family
ID=88191832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022067732A Active JP7788924B2 (ja) | 2022-04-15 | 2022-04-15 | 半導体装置およびその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230335604A1 (https=) |
| JP (1) | JP7788924B2 (https=) |
| KR (1) | KR20230148111A (https=) |
| CN (1) | CN116913956A (https=) |
| DE (1) | DE102023202818A1 (https=) |
| TW (1) | TW202343792A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7731320B2 (ja) * | 2022-05-17 | 2025-08-29 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| CN119153504B (zh) * | 2024-07-31 | 2025-09-23 | 海信家电集团股份有限公司 | 半导体装置和半导体装置的制造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5973730B2 (ja) | 2012-01-05 | 2016-08-23 | ルネサスエレクトロニクス株式会社 | Ｉｅ型トレンチゲートｉｇｂｔ |
| US9666663B2 (en) * | 2013-08-09 | 2017-05-30 | Infineon Technologies Ag | Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device |
| JP6909666B2 (ja) * | 2017-07-27 | 2021-07-28 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP7051641B2 (ja) * | 2018-08-24 | 2022-04-11 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP7630814B2 (ja) | 2020-10-21 | 2025-02-18 | 株式会社シグマ | 大口径ズームレンズ |
-
2022
- 2022-04-15 JP JP2022067732A patent/JP7788924B2/ja active Active
-
2023
- 2023-01-10 US US18/152,593 patent/US20230335604A1/en active Pending
- 2023-03-09 CN CN202310222416.7A patent/CN116913956A/zh active Pending
- 2023-03-28 DE DE102023202818.2A patent/DE102023202818A1/de active Pending
- 2023-04-10 TW TW112113208A patent/TW202343792A/zh unknown
- 2023-04-12 KR KR1020230047976A patent/KR20230148111A/ko active Pending
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