JP7788924B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JP7788924B2
JP7788924B2 JP2022067732A JP2022067732A JP7788924B2 JP 7788924 B2 JP7788924 B2 JP 7788924B2 JP 2022067732 A JP2022067732 A JP 2022067732A JP 2022067732 A JP2022067732 A JP 2022067732A JP 7788924 B2 JP7788924 B2 JP 7788924B2
Authority
JP
Japan
Prior art keywords
trench
emitter electrode
insulating film
depth
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022067732A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023157671A5 (https=
JP2023157671A (ja
Inventor
綱一 小西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2022067732A priority Critical patent/JP7788924B2/ja
Priority to US18/152,593 priority patent/US20230335604A1/en
Priority to CN202310222416.7A priority patent/CN116913956A/zh
Priority to DE102023202818.2A priority patent/DE102023202818A1/de
Priority to TW112113208A priority patent/TW202343792A/zh
Priority to KR1020230047976A priority patent/KR20230148111A/ko
Publication of JP2023157671A publication Critical patent/JP2023157671A/ja
Publication of JP2023157671A5 publication Critical patent/JP2023157671A5/ja
Application granted granted Critical
Publication of JP7788924B2 publication Critical patent/JP7788924B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/035—Etching a recess in the emitter region 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/145—Emitter regions of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
JP2022067732A 2022-04-15 2022-04-15 半導体装置およびその製造方法 Active JP7788924B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2022067732A JP7788924B2 (ja) 2022-04-15 2022-04-15 半導体装置およびその製造方法
US18/152,593 US20230335604A1 (en) 2022-04-15 2023-01-10 Semiconductor device and method of manufacturing the same
CN202310222416.7A CN116913956A (zh) 2022-04-15 2023-03-09 半导体器件及其制造方法
DE102023202818.2A DE102023202818A1 (de) 2022-04-15 2023-03-28 Halbleitervorrichtung und verfahren zu deren herstellung
TW112113208A TW202343792A (zh) 2022-04-15 2023-04-10 半導體裝置及其製造方法
KR1020230047976A KR20230148111A (ko) 2022-04-15 2023-04-12 반도체 장치 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022067732A JP7788924B2 (ja) 2022-04-15 2022-04-15 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2023157671A JP2023157671A (ja) 2023-10-26
JP2023157671A5 JP2023157671A5 (https=) 2024-09-30
JP7788924B2 true JP7788924B2 (ja) 2025-12-19

Family

ID=88191832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022067732A Active JP7788924B2 (ja) 2022-04-15 2022-04-15 半導体装置およびその製造方法

Country Status (6)

Country Link
US (1) US20230335604A1 (https=)
JP (1) JP7788924B2 (https=)
KR (1) KR20230148111A (https=)
CN (1) CN116913956A (https=)
DE (1) DE102023202818A1 (https=)
TW (1) TW202343792A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7731320B2 (ja) * 2022-05-17 2025-08-29 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN119153504B (zh) * 2024-07-31 2025-09-23 海信家电集团股份有限公司 半导体装置和半导体装置的制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150041962A1 (en) 2013-08-09 2015-02-12 Infineon Technologies Ag Semiconductor Device with Cell Trench Structures and Contacts and Method of Manufacturing a Semiconductor Device
JP2019029434A (ja) 2017-07-27 2019-02-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2020031167A (ja) 2018-08-24 2020-02-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5973730B2 (ja) 2012-01-05 2016-08-23 ルネサスエレクトロニクス株式会社 Ｉｅ型トレンチゲートｉｇｂｔ
JP7630814B2 (ja) 2020-10-21 2025-02-18 株式会社シグマ 大口径ズームレンズ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150041962A1 (en) 2013-08-09 2015-02-12 Infineon Technologies Ag Semiconductor Device with Cell Trench Structures and Contacts and Method of Manufacturing a Semiconductor Device
JP2019029434A (ja) 2017-07-27 2019-02-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2020031167A (ja) 2018-08-24 2020-02-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
CN116913956A (zh) 2023-10-20
DE102023202818A1 (de) 2023-10-19
KR20230148111A (ko) 2023-10-24
TW202343792A (zh) 2023-11-01
JP2023157671A (ja) 2023-10-26
US20230335604A1 (en) 2023-10-19

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