JP2023067992A - 加熱機構および基板加熱方法 - Google Patents
加熱機構および基板加熱方法 Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 132
- 230000007246 mechanism Effects 0.000 title claims abstract description 85
- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims description 11
- 239000012530 fluid Substances 0.000 claims abstract description 75
- 230000002093 peripheral effect Effects 0.000 claims abstract description 55
- 239000000463 material Substances 0.000 claims description 14
- 239000012212 insulator Substances 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 63
- 239000000126 substance Substances 0.000 description 36
- 239000007789 gas Substances 0.000 description 23
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 239000004813 Perfluoroalkoxy alkane Substances 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0247—For chemical processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
Abstract
Description
まず、実施形態に係る基板処理装置の構成について図1および図2を参照して説明する。図1および図2は、実施形態に係る基板処理装置の構成を示す模式図である。
次に、加熱機構30の構成について図3~図7を参照して説明する。図3は、実施形態に係る加熱機構30の模式断面図である。また、図4は、実施形態に係る加熱機構30の模式斜視図であり、図5は、実施形態に係る加熱機構30の模式側面図である。また、図6は、実施形態に係る加熱機構30の模式平面図であり、図7は、実施形態に係る加熱機構30の模式底面図である。
本体部31は、たとえばアルミニウム等の熱伝導率の高い材料で形成される。本体部31は、円環形状を有しており(図4参照)、保持部20と下方カップ50との間に配置される。
複数のフィン32は、ウェハWの下方かつ保持部20の外方においてウェハWの周方向に沿って配置される。具体的には、複数のフィン32は、本体部31の外周部に形成される。また、複数のフィン32は、ウェハWの周縁部よりも径方向内方に配置される。
熱源33は、複数のフィン32の近傍に配置され、複数のフィン32を加熱する。熱源33は、複数のフィン32の積層方向(Z軸方向)に沿って延在する複数の発熱体33aを有する。発熱体33aは、たとえばニクロム線を金属製のパイプで覆った棒状の部材であり、本体部31の下方から本体部31の内部に挿入される。
流体導入部34は、複数の導入口34aと、配管34bと、バルブ34cと、流量調整器34dと、流体供給源34eとを備える。
流体吐出部35は、複数の流入口35aと、複数の吐出口35bと、複数の流路35cとを備える。
断熱材36は、保持部20よりも外方、且つ、複数のフィン32および熱源33よりも内方に配置される。具体的には、断熱材36は、本体部31の内周面および第2フランジ部31cの下面に設けられる。なお、断熱材36は、第2フランジ部31cの内にも設けられてよい。このように断熱材36を設けることで、熱源33によって加熱された本体部31から発せられる熱が保持部20に伝わることを抑制することができる。
複数の第2ラビリンス部材37は、円環形状を有しており、互いに間隔をあけて同心円状に配置される(図4および図6参照)。
図3に示すように、加熱機構30と下方カップ50とは、加熱機構30の外周部に設けられたリング状のシール部材31dを介して当接している。リング状のシール部材31dは、複数のフィン32の上方および下方にそれぞれ設けられている。このため、複数のフィン32は、加熱機構30、下方カップ50および上下のシール部材31dによって囲まれる空間(以下、「加熱空間」と記載する)内に配置された状態となっている。
図8は、第1変形例に係る加熱機構の模式断面図である。図8に示すように、第1変形例に係る加熱機構30Aは、本体部31Aを備える。本体部31Aは、上述した実施形態に係る本体部31と同様の形状を有する。
1 基板処理装置
10 処理容器
20 保持部
21 バキュームチャック
30 加熱機構
31 本体部
32 フィン
33 熱源
34 流体導入部
35 流体吐出部
Claims (9)
- 基板に対して加熱された流体を供給する加熱機構であって、
円環形状を有する本体部と、
前記本体部の外周部の周方向に沿って形成された複数のフィンと、
前記複数のフィンを加熱する熱源と、
前記複数のフィンに前記流体を導入する流体導入部と、
前記複数のフィンを通過することによって加熱された前記流体を前記基板に吐出する流体吐出部と
を備える、加熱機構。 - 前記複数のフィンは、
高さ方向に間隔をあけて並べて配置される、請求項1に記載の加熱機構。 - 前記複数のフィンは、
前記周方向に間隔をあけて並べて配置される、請求項2に記載の加熱機構。 - 前記熱源は、
前記高さ方向に延在する発熱体を有する、請求項2または3に記載の加熱機構。 - 前記複数のフィンは、
前記熱源の外方に配置される、請求項2または3に記載の加熱機構。 - 前記本体部は、熱伝導性を有する材料で形成され、
前記複数のフィンおよび前記熱源の内方に配置された断熱材
をさらに備える、請求項1に記載の加熱機構。 - 前記流体吐出部は、
前記複数のフィンを通過することによって加熱された前記流体が流入する複数の流入口と、
基板保持部に保持された前記基板の下面に向けて開口する複数の吐出口と、
前記流入口と前記吐出口とを連通する流路と
を備える、請求項2または3に記載の加熱機構。 - 制御部
をさらに備え、
前記制御部は、
前記熱源を制御して前記本体部を加熱し、
その後、前記流体導入部を制御して前記複数のフィンに前記流体を導入して、前記本体部に形成された前記複数のフィンにより前記流体を加熱する、請求項1に記載の加熱機構。 - 請求項1に記載の加熱機構を用いて基板を加熱する基板加熱方法であって、
前記熱源により前記本体部を加熱し、
その後、前記流体導入部により前記複数のフィンに前記流体を導入して、前記本体部に形成された前記複数のフィンにより前記流体を加熱し、
加熱された前記流体を前記流体吐出部から前記基板に向けて吐出することにより、前記基板を加熱する、基板加熱方法。
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JP2024004945A JP2024026803A (ja) | 2019-04-16 | 2024-01-17 | 基板処理装置 |
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JP (3) | JP7242392B2 (ja) |
KR (1) | KR20200121734A (ja) |
CN (2) | CN111834251A (ja) |
TW (1) | TWI830896B (ja) |
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US7838800B2 (en) * | 2006-09-25 | 2010-11-23 | Tokyo Electron Limited | Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system |
JP4737083B2 (ja) | 2006-12-28 | 2011-07-27 | 東京エレクトロン株式会社 | 加熱装置及び塗布、現像装置並びに加熱方法 |
JP5153296B2 (ja) * | 2007-10-31 | 2013-02-27 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP5544985B2 (ja) * | 2009-06-23 | 2014-07-09 | 東京エレクトロン株式会社 | 液処理装置 |
JP5437168B2 (ja) | 2009-08-07 | 2014-03-12 | 東京エレクトロン株式会社 | 基板の液処理装置および液処理方法 |
KR101590661B1 (ko) | 2010-09-13 | 2016-02-01 | 도쿄엘렉트론가부시키가이샤 | 액처리 장치, 액처리 방법 및 기억 매체 |
US8744250B2 (en) * | 2011-02-23 | 2014-06-03 | Applied Materials, Inc. | Edge ring for a thermal processing chamber |
JP5996381B2 (ja) | 2011-12-28 | 2016-09-21 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
JP6195803B2 (ja) | 2014-05-02 | 2017-09-13 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
JP6270675B2 (ja) | 2014-09-22 | 2018-01-31 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
JP6482978B2 (ja) | 2015-07-23 | 2019-03-13 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6925145B2 (ja) | 2017-03-22 | 2021-08-25 | 株式会社Screenホールディングス | 基板処理装置 |
JP6925185B2 (ja) | 2017-06-30 | 2021-08-25 | 株式会社Screenホールディングス | 基板処理装置 |
JP6972939B2 (ja) * | 2017-11-07 | 2021-11-24 | 東京エレクトロン株式会社 | 基板処理装置、半導体装置の製造方法、及び記憶媒体 |
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JP7466728B2 (ja) | 2024-04-12 |
JP2024026803A (ja) | 2024-02-28 |
CN212485277U (zh) | 2021-02-05 |
TWI830896B (zh) | 2024-02-01 |
US20200337118A1 (en) | 2020-10-22 |
JP7242392B2 (ja) | 2023-03-20 |
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