JP2023052183A5 - - Google Patents
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- JP2023052183A5 JP2023052183A5 JP2023000076A JP2023000076A JP2023052183A5 JP 2023052183 A5 JP2023052183 A5 JP 2023052183A5 JP 2023000076 A JP2023000076 A JP 2023000076A JP 2023000076 A JP2023000076 A JP 2023000076A JP 2023052183 A5 JP2023052183 A5 JP 2023052183A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- substrate
- formula
- monovalent
- represented
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 claims 22
- 125000006273 (C1-C3) alkyl group Chemical group 0.000 claims 6
- 125000006729 (C2-C5) alkenyl group Chemical group 0.000 claims 6
- 239000003607 modifier Substances 0.000 claims 6
- 239000003795 chemical substances by application Substances 0.000 claims 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical group O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims 4
- KHBQMWCZKVMBLN-UHFFFAOYSA-N Benzenesulfonamide Chemical group NS(=O)(=O)C1=CC=CC=C1 KHBQMWCZKVMBLN-UHFFFAOYSA-N 0.000 claims 4
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 claims 4
- 125000005036 alkoxyphenyl group Chemical group 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 4
- 125000005843 halogen group Chemical group 0.000 claims 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 4
- -1 p-toluenesulfonyl group Chemical group 0.000 claims 4
- 125000003944 tolyl group Chemical group 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 238000012986 modification Methods 0.000 claims 3
- 230000004048 modification Effects 0.000 claims 3
- 238000000059 patterning Methods 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims 2
- 125000003342 alkenyl group Chemical group 0.000 claims 2
- 125000005370 alkoxysilyl group Chemical group 0.000 claims 2
- 125000003118 aryl group Chemical group 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 150000003950 cyclic amides Chemical class 0.000 claims 2
- 125000004122 cyclic group Chemical group 0.000 claims 2
- 125000000596 cyclohexenyl group Chemical group C1(=CCCCC1)* 0.000 claims 2
- KZTYYGOKRVBIMI-UHFFFAOYSA-N diphenyl sulfone Chemical group C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 KZTYYGOKRVBIMI-UHFFFAOYSA-N 0.000 claims 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 125000003518 norbornenyl group Chemical group C12(C=CC(CC1)C2)* 0.000 claims 2
- 125000000962 organic group Chemical group 0.000 claims 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims 2
- 125000000538 pentafluorophenyl group Chemical group FC1=C(F)C(F)=C(*)C(F)=C1F 0.000 claims 2
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 125000002088 tosyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1C([H])([H])[H])S(*)(=O)=O 0.000 claims 2
- 229910004541 SiN Inorganic materials 0.000 claims 1
- 229910008484 TiSi Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024138750A JP2024161537A (ja) | 2018-04-13 | 2024-08-20 | 半導体基板用プライマーおよびパターン形成方法 |
| JP2026058311A JP2026095564A (ja) | 2018-04-13 | 2026-03-31 | 半導体基板用プライマーおよびパターン形成方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018077668 | 2018-04-13 | ||
| JP2018077668 | 2018-04-13 | ||
| PCT/JP2019/015411 WO2019198700A1 (ja) | 2018-04-13 | 2019-04-09 | 半導体基板用プライマーおよびパターン形成方法 |
| JP2020513401A JPWO2019198700A1 (ja) | 2018-04-13 | 2019-04-09 | 半導体基板用プライマーおよびパターン形成方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020513401A Division JPWO2019198700A1 (ja) | 2018-04-13 | 2019-04-09 | 半導体基板用プライマーおよびパターン形成方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024138750A Division JP2024161537A (ja) | 2018-04-13 | 2024-08-20 | 半導体基板用プライマーおよびパターン形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023052183A JP2023052183A (ja) | 2023-04-11 |
| JP2023052183A5 true JP2023052183A5 (enExample) | 2024-01-18 |
| JP7544158B2 JP7544158B2 (ja) | 2024-09-03 |
Family
ID=68164170
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020513401A Pending JPWO2019198700A1 (ja) | 2018-04-13 | 2019-04-09 | 半導体基板用プライマーおよびパターン形成方法 |
| JP2023000076A Active JP7544158B2 (ja) | 2018-04-13 | 2023-01-04 | 半導体基板用プライマーおよびパターン形成方法 |
| JP2024138750A Pending JP2024161537A (ja) | 2018-04-13 | 2024-08-20 | 半導体基板用プライマーおよびパターン形成方法 |
| JP2026058311A Pending JP2026095564A (ja) | 2018-04-13 | 2026-03-31 | 半導体基板用プライマーおよびパターン形成方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020513401A Pending JPWO2019198700A1 (ja) | 2018-04-13 | 2019-04-09 | 半導体基板用プライマーおよびパターン形成方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024138750A Pending JP2024161537A (ja) | 2018-04-13 | 2024-08-20 | 半導体基板用プライマーおよびパターン形成方法 |
| JP2026058311A Pending JP2026095564A (ja) | 2018-04-13 | 2026-03-31 | 半導体基板用プライマーおよびパターン形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20210124266A1 (enExample) |
| JP (4) | JPWO2019198700A1 (enExample) |
| KR (2) | KR20250044951A (enExample) |
| CN (2) | CN121704130A (enExample) |
| TW (1) | TWI865446B (enExample) |
| WO (1) | WO2019198700A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116868318A (zh) * | 2021-02-22 | 2023-10-10 | 日产化学株式会社 | 具有薄膜的基板以及半导体基板 |
| WO2023008507A1 (ja) * | 2021-07-29 | 2023-02-02 | 日産化学株式会社 | シリコン含有レジスト下層膜形成用組成物、及びシリコン含有レジスト下層膜 |
| JP7730052B2 (ja) * | 2023-02-13 | 2025-08-27 | ダイキン工業株式会社 | 表面処理剤 |
| JP7830373B2 (ja) * | 2023-03-01 | 2026-03-16 | 信越化学工業株式会社 | レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法 |
| CN122396975A (zh) * | 2023-12-08 | 2026-07-14 | 日产化学株式会社 | 叠层体的制造方法及半导体元件的制造方法 |
| CN122459750A (zh) * | 2023-12-25 | 2026-07-24 | 日产化学株式会社 | 叠层体的制造方法和半导体元件的制造方法 |
| CN122477424A (zh) | 2024-01-18 | 2026-07-28 | 日产化学株式会社 | 含有硅的下层膜形成用组合物 |
| WO2025206020A1 (ja) * | 2024-03-27 | 2025-10-02 | 日産化学株式会社 | 積層体の製造方法、及び半導体素子の製造方法 |
| WO2026094729A1 (ja) * | 2024-10-31 | 2026-05-07 | 日産化学株式会社 | シリコン含有レジスト下層膜形成用組成物及び半導体素子の製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050214674A1 (en) | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
| WO2007066597A1 (ja) | 2005-12-06 | 2007-06-14 | Nissan Chemical Industries, Ltd. | 光架橋硬化のレジスト下層膜を形成するためのケイ素含有レジスト下層膜形成組成物 |
| US7759253B2 (en) * | 2006-08-07 | 2010-07-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and material for forming a double exposure lithography pattern |
| FI123292B (fi) * | 2011-06-14 | 2013-01-31 | Silecs Oy | Silaanimonomeerit ja niistä saatavat korkean taitekertoimen omaavat polymeerit |
| US9524871B2 (en) * | 2011-08-10 | 2016-12-20 | Nissan Chemical Industries, Ltd. | Silicon-containing resist underlayer film-forming composition having sulfone structure |
| JP6163770B2 (ja) * | 2012-03-07 | 2017-07-19 | Jsr株式会社 | レジスト下層膜形成用組成物及びパターン形成方法 |
| CN104246614B (zh) * | 2012-04-23 | 2020-09-08 | 日产化学工业株式会社 | 含有添加剂的含硅极紫外抗蚀剂下层膜形成用组合物 |
| US9822330B2 (en) * | 2012-10-11 | 2017-11-21 | Nissan Chemical Industries, Ltd. | Light-degradable material, substrate, and method for patterning the substrate |
| JP6196190B2 (ja) * | 2014-07-08 | 2017-09-13 | 信越化学工業株式会社 | 多層膜形成方法及びパターン形成方法 |
| JP6250514B2 (ja) * | 2014-10-03 | 2017-12-20 | 信越化学工業株式会社 | 塗布型ｂｐｓｇ膜形成用組成物、基板、及びパターン形成方法 |
| US10838303B2 (en) * | 2015-01-30 | 2020-11-17 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition for lithography containing hydrolyzable silane having carbonate skeleton |
| JP6786783B2 (ja) * | 2015-09-30 | 2020-11-18 | Jsr株式会社 | 多層レジストプロセス用シリコン含有膜形成組成物及びパターン形成方法 |
-
2019
- 2019-04-09 CN CN202512046304.2A patent/CN121704130A/zh active Pending
- 2019-04-09 KR KR1020257009995A patent/KR20250044951A/ko active Pending
- 2019-04-09 JP JP2020513401A patent/JPWO2019198700A1/ja active Pending
- 2019-04-09 KR KR1020207028143A patent/KR102792339B1/ko active Active
- 2019-04-09 US US17/043,821 patent/US20210124266A1/en not_active Abandoned
- 2019-04-09 WO PCT/JP2019/015411 patent/WO2019198700A1/ja not_active Ceased
- 2019-04-09 CN CN201980025380.5A patent/CN112041746A/zh active Pending
- 2019-04-10 TW TW108112437A patent/TWI865446B/zh active
-
2023
- 2023-01-04 JP JP2023000076A patent/JP7544158B2/ja active Active
-
2024
- 2024-07-26 US US18/785,814 patent/US20240385521A1/en active Pending
- 2024-08-20 JP JP2024138750A patent/JP2024161537A/ja active Pending
-
2026
- 2026-03-31 JP JP2026058311A patent/JP2026095564A/ja active Pending
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