JP2023026114A - リフレクタユニットおよび成膜装置 - Google Patents
リフレクタユニットおよび成膜装置 Download PDFInfo
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- 230000008021 deposition Effects 0.000 title abstract description 3
- 230000002093 peripheral effect Effects 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 53
- 230000005855 radiation Effects 0.000 description 48
- 239000010408 film Substances 0.000 description 33
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 22
- 229910010271 silicon carbide Inorganic materials 0.000 description 22
- 230000008878 coupling Effects 0.000 description 19
- 238000010168 coupling process Methods 0.000 description 19
- 238000005859 coupling reaction Methods 0.000 description 19
- 239000011810 insulating material Substances 0.000 description 16
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 16
- 229910003468 tantalcarbide Inorganic materials 0.000 description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 15
- 229910052799 carbon Inorganic materials 0.000 description 14
- 230000000694 effects Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 11
- 238000001816 cooling Methods 0.000 description 10
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 230000035882 stress Effects 0.000 description 8
- 239000003575 carbonaceous material Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910000856 hastalloy Inorganic materials 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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Abstract
Description
本実施形態は、チャンバへの熱伝導を充分に抑制し、応力の発生を抑えることができる、リフレクタユニットおよび成膜装置を提供する。
図1は、第1実施形態による成膜装置10の構成例を示す断面図である。成膜装置10は、チャンバ13と、ライナ20と、冷却部31、32、35と、ガス供給部12と、排気部50と、サセプタ60と、支持部70と、回転機構80と、下部ヒータ90と、上部ヒータ95と、リフレクタユニット100とを備えている。
図6は、第2実施形態による第1リフレクタユニット100aの構成例を示す断面図である。第2実施形態では、リフレクタ部品201_1~201_4は、互いにほぼ同一の断面形状を有する。リフレクタ部品201_1~201_4の係合部201a_1~201a_4、104aがほぼ同一の高さにあり、搭載部201b_1~201b_4もほぼ同一の高さにある。第2実施形態のその他の構成は、第1実施形態の対応する構成と同様でよい。
図7は、第1実施形態の変形例による第1リフレクタユニット100aの構成例を示す断面図である。変形例では、隣接するリフレクタ部品間の空間に配置された断熱材300_1~300_4をさらに備えている。断熱材300_1~300_4は、それぞれ略円筒形をする。尚、これら断熱材300_1~300_4は、スリットを有していてもよく、複数に分割されていてもよい。
図8Aは、第3実施形態による第1リフレクタユニット100aの構成例を示す断面図である。第3実施形態では、第1リフレクタユニット100aの支持手法が上記実施形態と異なる。第1リフレクタユニット100aは、ガス供給部12に取り付けられた取り付け部108を介して、結合部材501で固定された第1および第2支持部材400,410によって支持されている。取り付け部108は、トッププレート110の内縁に沿った略円環形状の部材である。取り付け部108には、例えば、カーボン、ハステロイ、または、石英の他、SiC(炭化珪素)、TaC(炭化タンタル)、W(タングステン)、Mo(モリブデン)、カーボンにSiC膜、またはTaC膜を成膜した材料などの700℃以上の耐熱性がある材料で形成されることが好ましい。
リフレクタ部品101_1、102_1、101_2の構成および機能は、第1実施形態のそれらと同様であるので、ここではその説明を省略する。
図12Aは、結合された第1支持部材400の他の構成例を示す側面から見た断面図である。図12Bは、結合された第1支持部材400の他の構成例を示す平面図である。尚、支持部材410は、図10に示すものと同様でよい。
Claims (7)
- 成膜チャンバに支持されるための第1係合部が外周側に設けられ、第1搭載部が内周側に設けられた、円筒状の第1リフレクタ部品と、
前記第1リフレクタ部品の内側に配置され、前記第1搭載部上で係合して前記第1リフレクタ部品に支持されるための第2係合部が外周側に設けられる円筒状の第2リフレクタ部品と、を備えるリフレクタユニット。 - 前記第1係合部は、鉛直方向の位置および水平方向の位相の少なくともいずれかが前記第2係合部と異なる、請求項1に記載のリフレクタユニット。
- 前記第1係合部、前記第1搭載部、および前記第2係合部の少なくともいずれかは、周方向において少なくとも3カ所に部分的に略均等配置される、請求項1または請求項2に記載のリフレクタユニット。
- 前記第2リフレクタ部品には、さらに第2搭載部が内周側に設けられ、
前記第2リフレクタ部品の内側に配置され、前記第2搭載部上で係合して前記第2リフレクタ部品に支持されるための第3係合部が外周側に設けられた、円筒状の第3リフレクタ部品と、を備える請求項1から請求項3のいずれか一項に記載のリフレクタユニット。 - 上部に開口を有するトッププレートを有し、基板を収容して成膜処理を行うチャンバと、
前記チャンバの上方に設けられ、前記トッププレートの前記開口を介して前記基板上に原料ガスを供給するガス供給部と、
前記基板を加熱するヒータと、
前記トッププレートの前記開口に設置される請求項1から請求項4のいずれか1項に記載のリフレクタユニットと、を備えた成膜装置。 - 前記リフレクタユニットは、前記トッププレートに係合して固定される請求項5に記載の成膜装置。
- 前記リフレクタユニットは、前記ガス供給部に取り付けられた取り付け部に固定される請求項5に記載の成膜装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2021131789A JP2023026114A (ja) | 2021-08-12 | 2021-08-12 | リフレクタユニットおよび成膜装置 |
KR1020247002731A KR20240025650A (ko) | 2021-08-12 | 2022-07-14 | 리플렉터 유닛 및 성막 장치 |
PCT/JP2022/027649 WO2023017706A1 (ja) | 2021-08-12 | 2022-07-14 | リフレクタユニットおよび成膜装置 |
CN202222114459.7U CN218436027U (zh) | 2021-08-12 | 2022-08-11 | 反射器单元及成膜装置 |
CN202210959960.5A CN115704107A (zh) | 2021-08-12 | 2022-08-11 | 反射器单元及成膜装置 |
US18/427,209 US20240167194A1 (en) | 2021-08-12 | 2024-01-30 | Reflector unit and film forming apparatus |
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JP2021131789A JP2023026114A (ja) | 2021-08-12 | 2021-08-12 | リフレクタユニットおよび成膜装置 |
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JP2021131789A Pending JP2023026114A (ja) | 2021-08-12 | 2021-08-12 | リフレクタユニットおよび成膜装置 |
Country Status (5)
Country | Link |
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US (1) | US20240167194A1 (ja) |
JP (1) | JP2023026114A (ja) |
KR (1) | KR20240025650A (ja) |
CN (2) | CN115704107A (ja) |
WO (1) | WO2023017706A1 (ja) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06145989A (ja) * | 1992-10-29 | 1994-05-27 | Iwasaki Electric Co Ltd | Cvd装置 |
JPH082064A (ja) | 1994-06-23 | 1996-01-09 | Tec Corp | 電子機器のカバー開閉検出装置 |
US6797062B2 (en) * | 2002-09-20 | 2004-09-28 | Memc Electronic Materials, Inc. | Heat shield assembly for a crystal puller |
JP4601701B2 (ja) | 2008-11-13 | 2010-12-22 | シャープ株式会社 | 気相成長装置及びガス供給方法 |
JP6054733B2 (ja) | 2012-03-02 | 2016-12-27 | スタンレー電気株式会社 | 気相成長装置 |
CN202786496U (zh) * | 2012-06-19 | 2013-03-13 | 中国电子科技集团公司第四十六研究所 | 一种应用于单晶炉中的复合型热屏装置 |
JP6700156B2 (ja) | 2016-11-16 | 2020-05-27 | 株式会社ニューフレアテクノロジー | 成膜装置 |
-
2021
- 2021-08-12 JP JP2021131789A patent/JP2023026114A/ja active Pending
-
2022
- 2022-07-14 KR KR1020247002731A patent/KR20240025650A/ko unknown
- 2022-07-14 WO PCT/JP2022/027649 patent/WO2023017706A1/ja active Application Filing
- 2022-08-11 CN CN202210959960.5A patent/CN115704107A/zh active Pending
- 2022-08-11 CN CN202222114459.7U patent/CN218436027U/zh active Active
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2024
- 2024-01-30 US US18/427,209 patent/US20240167194A1/en active Pending
Also Published As
Publication number | Publication date |
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WO2023017706A1 (ja) | 2023-02-16 |
KR20240025650A (ko) | 2024-02-27 |
CN218436027U (zh) | 2023-02-03 |
US20240167194A1 (en) | 2024-05-23 |
CN115704107A (zh) | 2023-02-17 |
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