JP2023024327A - イメージセンサー - Google Patents

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Publication number
JP2023024327A
JP2023024327A JP2022119107A JP2022119107A JP2023024327A JP 2023024327 A JP2023024327 A JP 2023024327A JP 2022119107 A JP2022119107 A JP 2022119107A JP 2022119107 A JP2022119107 A JP 2022119107A JP 2023024327 A JP2023024327 A JP 2023024327A
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JP
Japan
Prior art keywords
pixel region
pattern
pixel
substrate
extended
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022119107A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023024327A5 (enExample
Inventor
海 龍 朴
Haeyong Park
性 洙 崔
Sungsoo Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2023024327A publication Critical patent/JP2023024327A/ja
Publication of JP2023024327A5 publication Critical patent/JP2023024327A5/ja
Priority to JP2024199324A priority Critical patent/JP2025038903A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2022119107A 2021-08-05 2022-07-26 イメージセンサー Pending JP2023024327A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024199324A JP2025038903A (ja) 2021-08-05 2024-11-14 イメージセンサー

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020210103290A KR20230021428A (ko) 2021-08-05 2021-08-05 이미지 센서
KR10-2021-0103290 2021-08-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024199324A Division JP2025038903A (ja) 2021-08-05 2024-11-14 イメージセンサー

Publications (2)

Publication Number Publication Date
JP2023024327A true JP2023024327A (ja) 2023-02-16
JP2023024327A5 JP2023024327A5 (enExample) 2024-09-20

Family

ID=85152176

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022119107A Pending JP2023024327A (ja) 2021-08-05 2022-07-26 イメージセンサー
JP2024199324A Pending JP2025038903A (ja) 2021-08-05 2024-11-14 イメージセンサー

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024199324A Pending JP2025038903A (ja) 2021-08-05 2024-11-14 イメージセンサー

Country Status (4)

Country Link
US (3) US12148780B2 (enExample)
JP (2) JP2023024327A (enExample)
KR (1) KR20230021428A (enExample)
CN (2) CN119384054A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023054844A (ja) * 2020-07-23 2023-04-14 株式会社三洋物産 遊技機
JP2023054843A (ja) * 2020-07-23 2023-04-14 株式会社三洋物産 遊技機

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240297193A1 (en) * 2023-03-01 2024-09-05 Visera Technologies Company Limited Image sensor and method for forming the same
KR20240176285A (ko) * 2023-06-15 2024-12-24 삼성전자주식회사 이미지 센서

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015233122A (ja) * 2014-05-16 2015-12-24 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法、並びに電子機器
JP2018201015A (ja) * 2017-05-29 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
JP2020013817A (ja) * 2018-07-13 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
JP2020113762A (ja) * 2019-01-11 2020-07-27 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． イメージセンサー

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101788124B1 (ko) 2010-07-07 2017-10-20 삼성전자 주식회사 후면 조사형 이미지 센서 및 그 제조 방법
KR102286109B1 (ko) 2014-08-05 2021-08-04 삼성전자주식회사 이미지 픽셀, 이를 포함하는 이미지 센서, 및 이를 포함하는 이미지 처리 시스템
KR102212138B1 (ko) 2014-08-19 2021-02-04 삼성전자주식회사 이미지 센서의 단위 픽셀과 이를 포함하는 픽셀 어레이
KR102435995B1 (ko) 2015-08-07 2022-08-26 삼성전자주식회사 이미지 센서 및 이를 포함하는 이미지 처리 장치
WO2018207340A1 (ja) 2017-05-12 2018-11-15 オリンパス株式会社 固体撮像装置
US10429954B2 (en) 2017-05-31 2019-10-01 Microsoft Technology Licensing, Llc Multi-stroke smart ink gesture language
US11652115B2 (en) 2017-11-09 2023-05-16 Sony Semiconductor Solutions Corporation Solid-state imaging device and electronic apparatus
JP2019145544A (ja) 2018-02-16 2019-08-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子
KR102636358B1 (ko) * 2019-01-07 2024-02-13 삼성전자주식회사 이미지 센서
US11195869B2 (en) 2019-09-05 2021-12-07 Sony Semiconductor Solutions Corporation Solid-state imaging device and imaging device with shared circuit elements
KR102721028B1 (ko) * 2019-11-08 2024-10-25 삼성전자주식회사 이미지 센서

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015233122A (ja) * 2014-05-16 2015-12-24 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法、並びに電子機器
JP2018201015A (ja) * 2017-05-29 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
JP2020013817A (ja) * 2018-07-13 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
JP2020113762A (ja) * 2019-01-11 2020-07-27 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． イメージセンサー

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023054844A (ja) * 2020-07-23 2023-04-14 株式会社三洋物産 遊技機
JP2023054843A (ja) * 2020-07-23 2023-04-14 株式会社三洋物産 遊技機

Also Published As

Publication number Publication date
CN119384054A (zh) 2025-01-28
KR20230021428A (ko) 2023-02-14
US20240413183A1 (en) 2024-12-12
JP2025038903A (ja) 2025-03-19
US20240421170A1 (en) 2024-12-19
US12148780B2 (en) 2024-11-19
US20230044820A1 (en) 2023-02-09
CN115706121A (zh) 2023-02-17

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