CN119384054A - 图像传感器 - Google Patents

图像传感器 Download PDF

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Publication number
CN119384054A
CN119384054A CN202411366097.8A CN202411366097A CN119384054A CN 119384054 A CN119384054 A CN 119384054A CN 202411366097 A CN202411366097 A CN 202411366097A CN 119384054 A CN119384054 A CN 119384054A
Authority
CN
China
Prior art keywords
pattern
region
photoelectric conversion
pixel region
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202411366097.8A
Other languages
English (en)
Chinese (zh)
Inventor
朴海龙
崔性洙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN119384054A publication Critical patent/CN119384054A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202411366097.8A 2021-08-05 2022-05-19 图像传感器 Pending CN119384054A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020210103290A KR20230021428A (ko) 2021-08-05 2021-08-05 이미지 센서
KR10-2021-0103290 2021-08-05
CN202210556606.8A CN115706121A (zh) 2021-08-05 2022-05-19 图像传感器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN202210556606.8A Division CN115706121A (zh) 2021-08-05 2022-05-19 图像传感器

Publications (1)

Publication Number Publication Date
CN119384054A true CN119384054A (zh) 2025-01-28

Family

ID=85152176

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202210556606.8A Pending CN115706121A (zh) 2021-08-05 2022-05-19 图像传感器
CN202411366097.8A Pending CN119384054A (zh) 2021-08-05 2022-05-19 图像传感器

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN202210556606.8A Pending CN115706121A (zh) 2021-08-05 2022-05-19 图像传感器

Country Status (4)

Country Link
US (3) US12148780B2 (enExample)
JP (2) JP2023024327A (enExample)
KR (1) KR20230021428A (enExample)
CN (2) CN115706121A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7235017B2 (ja) * 2020-07-23 2023-03-08 株式会社三洋物産 遊技機
JP7235016B2 (ja) * 2020-07-23 2023-03-08 株式会社三洋物産 遊技機
US20240297193A1 (en) * 2023-03-01 2024-09-05 Visera Technologies Company Limited Image sensor and method for forming the same
KR20240176285A (ko) * 2023-06-15 2024-12-24 삼성전자주식회사 이미지 센서

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101788124B1 (ko) 2010-07-07 2017-10-20 삼성전자 주식회사 후면 조사형 이미지 센서 및 그 제조 방법
JP6215246B2 (ja) * 2014-05-16 2017-10-18 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像素子の製造方法、並びに電子機器
KR102286109B1 (ko) 2014-08-05 2021-08-04 삼성전자주식회사 이미지 픽셀, 이를 포함하는 이미지 센서, 및 이를 포함하는 이미지 처리 시스템
KR102212138B1 (ko) 2014-08-19 2021-02-04 삼성전자주식회사 이미지 센서의 단위 픽셀과 이를 포함하는 픽셀 어레이
KR102435995B1 (ko) 2015-08-07 2022-08-26 삼성전자주식회사 이미지 센서 및 이를 포함하는 이미지 처리 장치
WO2018207340A1 (ja) 2017-05-12 2018-11-15 オリンパス株式会社 固体撮像装置
JP7316764B2 (ja) 2017-05-29 2023-07-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
US10429954B2 (en) 2017-05-31 2019-10-01 Microsoft Technology Licensing, Llc Multi-stroke smart ink gesture language
CN111279482B (zh) 2017-11-09 2025-03-21 索尼半导体解决方案公司 固态摄像装置和电子设备
JP2019145544A (ja) 2018-02-16 2019-08-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子
JP2020013817A (ja) * 2018-07-13 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
KR102636358B1 (ko) * 2019-01-07 2024-02-13 삼성전자주식회사 이미지 센서
KR102651605B1 (ko) * 2019-01-11 2024-03-27 삼성전자주식회사 이미지 센서
US11195869B2 (en) 2019-09-05 2021-12-07 Sony Semiconductor Solutions Corporation Solid-state imaging device and imaging device with shared circuit elements
KR102721028B1 (ko) * 2019-11-08 2024-10-25 삼성전자주식회사 이미지 센서

Also Published As

Publication number Publication date
US20240413183A1 (en) 2024-12-12
CN115706121A (zh) 2023-02-17
US12148780B2 (en) 2024-11-19
KR20230021428A (ko) 2023-02-14
JP2023024327A (ja) 2023-02-16
US20240421170A1 (en) 2024-12-19
US20230044820A1 (en) 2023-02-09
JP2025038903A (ja) 2025-03-19

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