JP2023005918A5 - - Google Patents

Download PDF

Info

Publication number
JP2023005918A5
JP2023005918A5 JP2021108187A JP2021108187A JP2023005918A5 JP 2023005918 A5 JP2023005918 A5 JP 2023005918A5 JP 2021108187 A JP2021108187 A JP 2021108187A JP 2021108187 A JP2021108187 A JP 2021108187A JP 2023005918 A5 JP2023005918 A5 JP 2023005918A5
Authority
JP
Japan
Prior art keywords
dielectric film
film
nitride semiconductor
dielectric
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021108187A
Other languages
English (en)
Japanese (ja)
Other versions
JP7802468B2 (ja
JP2023005918A (ja
Filing date
Publication date
Priority claimed from JP2021108187A external-priority patent/JP7802468B2/ja
Priority to JP2021108187A priority Critical patent/JP7802468B2/ja
Application filed filed Critical
Priority to PCT/JP2022/024936 priority patent/WO2023276833A1/ja
Priority to CN202280045427.6A priority patent/CN117561657A/zh
Priority to EP22832980.1A priority patent/EP4366099A4/en
Publication of JP2023005918A publication Critical patent/JP2023005918A/ja
Priority to US18/392,668 priority patent/US20240128406A1/en
Publication of JP2023005918A5 publication Critical patent/JP2023005918A5/ja
Publication of JP7802468B2 publication Critical patent/JP7802468B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2021108187A 2021-06-29 2021-06-29 窒化物半導体発光素子 Active JP7802468B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2021108187A JP7802468B2 (ja) 2021-06-29 2021-06-29 窒化物半導体発光素子
PCT/JP2022/024936 WO2023276833A1 (ja) 2021-06-29 2022-06-22 窒化物半導体発光素子
CN202280045427.6A CN117561657A (zh) 2021-06-29 2022-06-22 氮化物半导体发光元件
EP22832980.1A EP4366099A4 (en) 2021-06-29 2022-06-22 Nitride semiconductor light-emitting element
US18/392,668 US20240128406A1 (en) 2021-06-29 2023-12-21 Nitride semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021108187A JP7802468B2 (ja) 2021-06-29 2021-06-29 窒化物半導体発光素子

Publications (3)

Publication Number Publication Date
JP2023005918A JP2023005918A (ja) 2023-01-18
JP2023005918A5 true JP2023005918A5 (https=) 2024-07-08
JP7802468B2 JP7802468B2 (ja) 2026-01-20

Family

ID=84691276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021108187A Active JP7802468B2 (ja) 2021-06-29 2021-06-29 窒化物半導体発光素子

Country Status (5)

Country Link
US (1) US20240128406A1 (https=)
EP (1) EP4366099A4 (https=)
JP (1) JP7802468B2 (https=)
CN (1) CN117561657A (https=)
WO (1) WO2023276833A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230105727A (ko) * 2022-01-04 2023-07-12 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
WO2024257659A1 (ja) * 2023-06-13 2024-12-19 ヌヴォトンテクノロジージャパン株式会社 半導体発光素子

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4236840B2 (ja) * 2001-12-25 2009-03-11 富士フイルム株式会社 半導体レーザ素子
JP3856300B2 (ja) * 2002-03-11 2006-12-13 ソニー株式会社 半導体レーザ素子
JP2004289108A (ja) * 2002-09-27 2004-10-14 Mitsubishi Electric Corp 半導体光素子
JP4097552B2 (ja) * 2003-03-27 2008-06-11 三菱電機株式会社 半導体レーザ装置
JP2004327581A (ja) * 2003-04-23 2004-11-18 Mitsubishi Electric Corp 半導体レーザ装置
JP2004327678A (ja) * 2003-04-24 2004-11-18 Sony Corp 多波長半導体レーザ及びその製造方法
JP5191650B2 (ja) * 2005-12-16 2013-05-08 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP2007201373A (ja) * 2006-01-30 2007-08-09 Sharp Corp 半導体レーザ素子
JP4799339B2 (ja) * 2006-09-22 2011-10-26 シャープ株式会社 窒化物半導体発光素子
JP5042609B2 (ja) * 2006-12-08 2012-10-03 シャープ株式会社 窒化物系半導体素子
US7646798B2 (en) * 2006-12-28 2010-01-12 Nichia Corporation Nitride semiconductor laser element
JP2008227169A (ja) * 2007-03-13 2008-09-25 Nec Electronics Corp 半導体レーザ素子
US7843980B2 (en) * 2007-05-16 2010-11-30 Rohm Co., Ltd. Semiconductor laser diode
US7940003B2 (en) * 2007-06-13 2011-05-10 Sharp Kabushiki Kaisha Light emitting device and method of fabricating a light emitting device
JP5127642B2 (ja) * 2007-09-28 2013-01-23 三洋電機株式会社 窒化物系半導体レーザ素子
JP5014967B2 (ja) * 2007-12-06 2012-08-29 シャープ株式会社 発光素子及び発光素子の製造方法
DE102008018928A1 (de) * 2008-04-15 2009-10-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
WO2009147853A1 (ja) * 2008-06-06 2009-12-10 パナソニック株式会社 半導体発光素子
JP5383313B2 (ja) * 2009-05-20 2014-01-08 パナソニック株式会社 窒化物半導体発光装置
JP4621791B2 (ja) * 2009-06-11 2011-01-26 シャープ株式会社 窒化物半導体レーザ素子
DE102009054912A1 (de) * 2009-08-28 2011-03-10 M2K-Laser Gmbh Hochleistungs-Diodenlaser und Verfahren zum Herstellen eines Hochleistungs-Diodenlasers
JP2011119540A (ja) * 2009-12-04 2011-06-16 Panasonic Corp 窒化物半導体レーザ素子
DE102010015197A1 (de) * 2010-04-16 2012-01-19 Osram Opto Semiconductors Gmbh Laserlichtquelle
JP2012084753A (ja) * 2010-10-14 2012-04-26 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子及び光装置
JP2012227239A (ja) * 2011-04-18 2012-11-15 Sanyo Electric Co Ltd 半導体レーザ素子
CN104247173B (zh) * 2012-06-29 2015-06-24 松下电器产业株式会社 氮化物半导体发光元件
CN104364983B (zh) * 2012-12-19 2016-03-09 松下知识产权经营株式会社 氮化物半导体激光元件
DE102014102360A1 (de) * 2014-02-24 2015-08-27 Osram Opto Semiconductors Gmbh Laserdiodenchip
US9972968B2 (en) * 2016-04-20 2018-05-15 Trumpf Photonics, Inc. Passivation of laser facets and systems for performing the same
DE102017112610A1 (de) * 2017-06-08 2018-12-13 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser
WO2019159449A1 (ja) * 2018-02-14 2019-08-22 パナソニックIpマネジメント株式会社 窒化物半導体レーザ素子及び照明光源モジュール

Similar Documents

Publication Publication Date Title
US7961393B2 (en) Selectively absorptive wire-grid polarizer
US8027087B2 (en) Multilayer wire-grid polarizer with off-set wire-grid and dielectric grid
JP2023005918A5 (https=)
CN1312728C (zh) 电子器件基片结构和电子器件
CN101453098B (zh) 发光元件及其制造方法
US7003009B2 (en) Semiconductor laser device
US20080024053A1 (en) Three-dimensional structure, light emitting element including the structure, and method for manufacturing the structure
JP7296934B2 (ja) 窒化物半導体レーザ素子及び照明光源モジュール
JP2023022627A5 (https=)
WO2019033830A1 (zh) 有机发光显示面板及制备方法、显示装置
JP2008227002A (ja) 窒化物半導体レーザ素子
JPWO2021187081A5 (https=)
CN101897044B (zh) 发射偏振辐射的半导体器件
US20100108137A1 (en) Crystalline solar cell having stacked structure and method of manufacturing the crystalline solar cell
TW201409750A (zh) 半導體積層構造體及半導體元件(二)
CN117561657A (zh) 氮化物半导体发光元件
JP2025129325A (ja) 窒化物半導体レーザ素子
JP2009088353A (ja) 発光装置
JP2005136033A (ja) 半導体発光素子
JP7614488B2 (ja) 垂直共振器面発光レーザ素子及びその製造方法
US20240162201A1 (en) Micro semiconductor device and micro semiconductor structure
JP2023084658A5 (https=)
JPWO2024257659A5 (https=)
WO2024257659A1 (ja) 半導体発光素子
KR20070069697A (ko) 유기전계발광표시장치 및 그 제조방법