JP2023005918A5 - - Google Patents
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- Publication number
- JP2023005918A5 JP2023005918A5 JP2021108187A JP2021108187A JP2023005918A5 JP 2023005918 A5 JP2023005918 A5 JP 2023005918A5 JP 2021108187 A JP2021108187 A JP 2021108187A JP 2021108187 A JP2021108187 A JP 2021108187A JP 2023005918 A5 JP2023005918 A5 JP 2023005918A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric film
- film
- nitride semiconductor
- dielectric
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021108187A JP7802468B2 (ja) | 2021-06-29 | 2021-06-29 | 窒化物半導体発光素子 |
| PCT/JP2022/024936 WO2023276833A1 (ja) | 2021-06-29 | 2022-06-22 | 窒化物半導体発光素子 |
| CN202280045427.6A CN117561657A (zh) | 2021-06-29 | 2022-06-22 | 氮化物半导体发光元件 |
| EP22832980.1A EP4366099A4 (en) | 2021-06-29 | 2022-06-22 | Nitride semiconductor light-emitting element |
| US18/392,668 US20240128406A1 (en) | 2021-06-29 | 2023-12-21 | Nitride semiconductor light-emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021108187A JP7802468B2 (ja) | 2021-06-29 | 2021-06-29 | 窒化物半導体発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023005918A JP2023005918A (ja) | 2023-01-18 |
| JP2023005918A5 true JP2023005918A5 (https=) | 2024-07-08 |
| JP7802468B2 JP7802468B2 (ja) | 2026-01-20 |
Family
ID=84691276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021108187A Active JP7802468B2 (ja) | 2021-06-29 | 2021-06-29 | 窒化物半導体発光素子 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240128406A1 (https=) |
| EP (1) | EP4366099A4 (https=) |
| JP (1) | JP7802468B2 (https=) |
| CN (1) | CN117561657A (https=) |
| WO (1) | WO2023276833A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230105727A (ko) * | 2022-01-04 | 2023-07-12 | 삼성디스플레이 주식회사 | 발광 소자 및 이를 포함하는 표시 장치 |
| WO2024257659A1 (ja) * | 2023-06-13 | 2024-12-19 | ヌヴォトンテクノロジージャパン株式会社 | 半導体発光素子 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4236840B2 (ja) * | 2001-12-25 | 2009-03-11 | 富士フイルム株式会社 | 半導体レーザ素子 |
| JP3856300B2 (ja) * | 2002-03-11 | 2006-12-13 | ソニー株式会社 | 半導体レーザ素子 |
| JP2004289108A (ja) * | 2002-09-27 | 2004-10-14 | Mitsubishi Electric Corp | 半導体光素子 |
| JP4097552B2 (ja) * | 2003-03-27 | 2008-06-11 | 三菱電機株式会社 | 半導体レーザ装置 |
| JP2004327581A (ja) * | 2003-04-23 | 2004-11-18 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JP2004327678A (ja) * | 2003-04-24 | 2004-11-18 | Sony Corp | 多波長半導体レーザ及びその製造方法 |
| JP5191650B2 (ja) * | 2005-12-16 | 2013-05-08 | シャープ株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
| JP2007201373A (ja) * | 2006-01-30 | 2007-08-09 | Sharp Corp | 半導体レーザ素子 |
| JP4799339B2 (ja) * | 2006-09-22 | 2011-10-26 | シャープ株式会社 | 窒化物半導体発光素子 |
| JP5042609B2 (ja) * | 2006-12-08 | 2012-10-03 | シャープ株式会社 | 窒化物系半導体素子 |
| US7646798B2 (en) * | 2006-12-28 | 2010-01-12 | Nichia Corporation | Nitride semiconductor laser element |
| JP2008227169A (ja) * | 2007-03-13 | 2008-09-25 | Nec Electronics Corp | 半導体レーザ素子 |
| US7843980B2 (en) * | 2007-05-16 | 2010-11-30 | Rohm Co., Ltd. | Semiconductor laser diode |
| US7940003B2 (en) * | 2007-06-13 | 2011-05-10 | Sharp Kabushiki Kaisha | Light emitting device and method of fabricating a light emitting device |
| JP5127642B2 (ja) * | 2007-09-28 | 2013-01-23 | 三洋電機株式会社 | 窒化物系半導体レーザ素子 |
| JP5014967B2 (ja) * | 2007-12-06 | 2012-08-29 | シャープ株式会社 | 発光素子及び発光素子の製造方法 |
| DE102008018928A1 (de) * | 2008-04-15 | 2009-10-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
| WO2009147853A1 (ja) * | 2008-06-06 | 2009-12-10 | パナソニック株式会社 | 半導体発光素子 |
| JP5383313B2 (ja) * | 2009-05-20 | 2014-01-08 | パナソニック株式会社 | 窒化物半導体発光装置 |
| JP4621791B2 (ja) * | 2009-06-11 | 2011-01-26 | シャープ株式会社 | 窒化物半導体レーザ素子 |
| DE102009054912A1 (de) * | 2009-08-28 | 2011-03-10 | M2K-Laser Gmbh | Hochleistungs-Diodenlaser und Verfahren zum Herstellen eines Hochleistungs-Diodenlasers |
| JP2011119540A (ja) * | 2009-12-04 | 2011-06-16 | Panasonic Corp | 窒化物半導体レーザ素子 |
| DE102010015197A1 (de) * | 2010-04-16 | 2012-01-19 | Osram Opto Semiconductors Gmbh | Laserlichtquelle |
| JP2012084753A (ja) * | 2010-10-14 | 2012-04-26 | Sanyo Electric Co Ltd | 窒化物系半導体レーザ素子及び光装置 |
| JP2012227239A (ja) * | 2011-04-18 | 2012-11-15 | Sanyo Electric Co Ltd | 半導体レーザ素子 |
| CN104247173B (zh) * | 2012-06-29 | 2015-06-24 | 松下电器产业株式会社 | 氮化物半导体发光元件 |
| CN104364983B (zh) * | 2012-12-19 | 2016-03-09 | 松下知识产权经营株式会社 | 氮化物半导体激光元件 |
| DE102014102360A1 (de) * | 2014-02-24 | 2015-08-27 | Osram Opto Semiconductors Gmbh | Laserdiodenchip |
| US9972968B2 (en) * | 2016-04-20 | 2018-05-15 | Trumpf Photonics, Inc. | Passivation of laser facets and systems for performing the same |
| DE102017112610A1 (de) * | 2017-06-08 | 2018-12-13 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser |
| WO2019159449A1 (ja) * | 2018-02-14 | 2019-08-22 | パナソニックIpマネジメント株式会社 | 窒化物半導体レーザ素子及び照明光源モジュール |
-
2021
- 2021-06-29 JP JP2021108187A patent/JP7802468B2/ja active Active
-
2022
- 2022-06-22 WO PCT/JP2022/024936 patent/WO2023276833A1/ja not_active Ceased
- 2022-06-22 EP EP22832980.1A patent/EP4366099A4/en active Pending
- 2022-06-22 CN CN202280045427.6A patent/CN117561657A/zh active Pending
-
2023
- 2023-12-21 US US18/392,668 patent/US20240128406A1/en active Pending
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