JP7802468B2 - 窒化物半導体発光素子 - Google Patents

窒化物半導体発光素子

Info

Publication number
JP7802468B2
JP7802468B2 JP2021108187A JP2021108187A JP7802468B2 JP 7802468 B2 JP7802468 B2 JP 7802468B2 JP 2021108187 A JP2021108187 A JP 2021108187A JP 2021108187 A JP2021108187 A JP 2021108187A JP 7802468 B2 JP7802468 B2 JP 7802468B2
Authority
JP
Japan
Prior art keywords
film
dielectric film
nitride semiconductor
dielectric
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021108187A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023005918A (ja
JP2023005918A5 (https=
Inventor
真治 吉田
英夫 北川
貴大 岡口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Priority to JP2021108187A priority Critical patent/JP7802468B2/ja
Priority to PCT/JP2022/024936 priority patent/WO2023276833A1/ja
Priority to CN202280045427.6A priority patent/CN117561657A/zh
Priority to EP22832980.1A priority patent/EP4366099A4/en
Publication of JP2023005918A publication Critical patent/JP2023005918A/ja
Priority to US18/392,668 priority patent/US20240128406A1/en
Publication of JP2023005918A5 publication Critical patent/JP2023005918A5/ja
Application granted granted Critical
Publication of JP7802468B2 publication Critical patent/JP7802468B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2021108187A 2021-06-29 2021-06-29 窒化物半導体発光素子 Active JP7802468B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2021108187A JP7802468B2 (ja) 2021-06-29 2021-06-29 窒化物半導体発光素子
PCT/JP2022/024936 WO2023276833A1 (ja) 2021-06-29 2022-06-22 窒化物半導体発光素子
CN202280045427.6A CN117561657A (zh) 2021-06-29 2022-06-22 氮化物半导体发光元件
EP22832980.1A EP4366099A4 (en) 2021-06-29 2022-06-22 Nitride semiconductor light-emitting element
US18/392,668 US20240128406A1 (en) 2021-06-29 2023-12-21 Nitride semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021108187A JP7802468B2 (ja) 2021-06-29 2021-06-29 窒化物半導体発光素子

Publications (3)

Publication Number Publication Date
JP2023005918A JP2023005918A (ja) 2023-01-18
JP2023005918A5 JP2023005918A5 (https=) 2024-07-08
JP7802468B2 true JP7802468B2 (ja) 2026-01-20

Family

ID=84691276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021108187A Active JP7802468B2 (ja) 2021-06-29 2021-06-29 窒化物半導体発光素子

Country Status (5)

Country Link
US (1) US20240128406A1 (https=)
EP (1) EP4366099A4 (https=)
JP (1) JP7802468B2 (https=)
CN (1) CN117561657A (https=)
WO (1) WO2023276833A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230105727A (ko) * 2022-01-04 2023-07-12 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
WO2024257659A1 (ja) * 2023-06-13 2024-12-19 ヌヴォトンテクノロジージャパン株式会社 半導体発光素子

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007201373A (ja) 2006-01-30 2007-08-09 Sharp Corp 半導体レーザ素子
JP2008078465A (ja) 2006-09-22 2008-04-03 Sharp Corp 窒化物半導体発光素子
JP2008147363A (ja) 2006-12-08 2008-06-26 Sharp Corp 窒化物系半導体素子
JP2009099958A (ja) 2007-09-28 2009-05-07 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子
WO2009147853A1 (ja) 2008-06-06 2009-12-10 パナソニック株式会社 半導体発光素子
JP2011119540A (ja) 2009-12-04 2011-06-16 Panasonic Corp 窒化物半導体レーザ素子
JP2012084753A (ja) 2010-10-14 2012-04-26 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子及び光装置
JP2012227239A (ja) 2011-04-18 2012-11-15 Sanyo Electric Co Ltd 半導体レーザ素子
US20130107534A1 (en) 2010-04-16 2013-05-02 Osram Opto Semiconductors Gmbh Laser Light Source
WO2014002339A1 (ja) 2012-06-29 2014-01-03 パナソニック株式会社 窒化物半導体発光素子
WO2014097508A1 (ja) 2012-12-19 2014-06-26 パナソニック株式会社 窒化物半導体レーザ素子
WO2019159449A1 (ja) 2018-02-14 2019-08-22 パナソニックＩｐマネジメント株式会社 窒化物半導体レーザ素子及び照明光源モジュール

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4236840B2 (ja) * 2001-12-25 2009-03-11 富士フイルム株式会社 半導体レーザ素子
JP3856300B2 (ja) * 2002-03-11 2006-12-13 ソニー株式会社 半導体レーザ素子
JP2004289108A (ja) * 2002-09-27 2004-10-14 Mitsubishi Electric Corp 半導体光素子
JP4097552B2 (ja) * 2003-03-27 2008-06-11 三菱電機株式会社 半導体レーザ装置
JP2004327581A (ja) * 2003-04-23 2004-11-18 Mitsubishi Electric Corp 半導体レーザ装置
JP2004327678A (ja) * 2003-04-24 2004-11-18 Sony Corp 多波長半導体レーザ及びその製造方法
JP5191650B2 (ja) * 2005-12-16 2013-05-08 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
US7646798B2 (en) * 2006-12-28 2010-01-12 Nichia Corporation Nitride semiconductor laser element
JP2008227169A (ja) * 2007-03-13 2008-09-25 Nec Electronics Corp 半導体レーザ素子
US7843980B2 (en) * 2007-05-16 2010-11-30 Rohm Co., Ltd. Semiconductor laser diode
US7940003B2 (en) * 2007-06-13 2011-05-10 Sharp Kabushiki Kaisha Light emitting device and method of fabricating a light emitting device
JP5014967B2 (ja) * 2007-12-06 2012-08-29 シャープ株式会社 発光素子及び発光素子の製造方法
DE102008018928A1 (de) * 2008-04-15 2009-10-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP5383313B2 (ja) * 2009-05-20 2014-01-08 パナソニック株式会社 窒化物半導体発光装置
JP4621791B2 (ja) * 2009-06-11 2011-01-26 シャープ株式会社 窒化物半導体レーザ素子
DE102009054912A1 (de) * 2009-08-28 2011-03-10 M2K-Laser Gmbh Hochleistungs-Diodenlaser und Verfahren zum Herstellen eines Hochleistungs-Diodenlasers
DE102014102360A1 (de) * 2014-02-24 2015-08-27 Osram Opto Semiconductors Gmbh Laserdiodenchip
US9972968B2 (en) * 2016-04-20 2018-05-15 Trumpf Photonics, Inc. Passivation of laser facets and systems for performing the same
DE102017112610A1 (de) * 2017-06-08 2018-12-13 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007201373A (ja) 2006-01-30 2007-08-09 Sharp Corp 半導体レーザ素子
JP2008078465A (ja) 2006-09-22 2008-04-03 Sharp Corp 窒化物半導体発光素子
JP2008147363A (ja) 2006-12-08 2008-06-26 Sharp Corp 窒化物系半導体素子
JP2009099958A (ja) 2007-09-28 2009-05-07 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子
WO2009147853A1 (ja) 2008-06-06 2009-12-10 パナソニック株式会社 半導体発光素子
JP2011119540A (ja) 2009-12-04 2011-06-16 Panasonic Corp 窒化物半導体レーザ素子
US20130107534A1 (en) 2010-04-16 2013-05-02 Osram Opto Semiconductors Gmbh Laser Light Source
JP2012084753A (ja) 2010-10-14 2012-04-26 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子及び光装置
JP2012227239A (ja) 2011-04-18 2012-11-15 Sanyo Electric Co Ltd 半導体レーザ素子
WO2014002339A1 (ja) 2012-06-29 2014-01-03 パナソニック株式会社 窒化物半導体発光素子
WO2014097508A1 (ja) 2012-12-19 2014-06-26 パナソニック株式会社 窒化物半導体レーザ素子
WO2019159449A1 (ja) 2018-02-14 2019-08-22 パナソニックＩｐマネジメント株式会社 窒化物半導体レーザ素子及び照明光源モジュール

Also Published As

Publication number Publication date
EP4366099A4 (en) 2025-01-08
CN117561657A (zh) 2024-02-13
EP4366099A1 (en) 2024-05-08
US20240128406A1 (en) 2024-04-18
WO2023276833A1 (ja) 2023-01-05
JP2023005918A (ja) 2023-01-18

Similar Documents

Publication Publication Date Title
US20200224831A1 (en) Gallium and nitrogen containing laser module configured for phosphor pumping
US9595813B2 (en) Laser package having multiple emitters configured on a substrate member
US7609737B2 (en) Nitride semiconductor laser element
US20240128406A1 (en) Nitride semiconductor light-emitting element
JP2008227002A (ja) 窒化物半導体レーザ素子
WO2014097508A1 (ja) 窒化物半導体レーザ素子
JP5193718B2 (ja) 窒化物半導体レーザ装置
WO2009147853A1 (ja) 半導体発光素子
KR101407885B1 (ko) 질화물 반도체 레이저 소자
JP3646302B2 (ja) 半導体レーザ
US12603478B2 (en) Semiconductor laser and semiconductor laser device
JP3101997B2 (ja) 窒化物半導体レーザ素子
JP5156347B2 (ja) 半導体発光素子およびその製造方法
JP2009267108A (ja) 半導体発光素子及びそれを用いた半導体発光装置
JP2006012899A (ja) 半導体レーザ素子および半導体レーザ素子の製造方法
JP5803167B2 (ja) 窒化物半導体レーザ素子の製造方法
CN105765800B (zh) 发光元件
US20250118946A1 (en) Semiconductor laser element
JP2025070683A (ja) 半導体レーザ発光素子
JP5488775B1 (ja) 窒化物半導体レーザ素子
JP2005158881A (ja) 半導体レーザ素子
JP2006351965A (ja) 曲面形成方法および半導体発光素子

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240628

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240628

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250729

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250926

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20251216

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20260107

R150 Certificate of patent or registration of utility model

Ref document number: 7802468

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150