JP2022540086A5 - - Google Patents

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Publication number
JP2022540086A5
JP2022540086A5 JP2022500551A JP2022500551A JP2022540086A5 JP 2022540086 A5 JP2022540086 A5 JP 2022540086A5 JP 2022500551 A JP2022500551 A JP 2022500551A JP 2022500551 A JP2022500551 A JP 2022500551A JP 2022540086 A5 JP2022540086 A5 JP 2022540086A5
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JP
Japan
Prior art keywords
acetic acid
weight
approximately
cleaning agent
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022500551A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022540086A (ja
JP7550211B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2020/068936 external-priority patent/WO2021004985A1/en
Publication of JP2022540086A publication Critical patent/JP2022540086A/ja
Publication of JP2022540086A5 publication Critical patent/JP2022540086A5/ja
Priority to JP2024079169A priority Critical patent/JP7792461B2/ja
Application granted granted Critical
Publication of JP7550211B2 publication Critical patent/JP7550211B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2022500551A 2019-07-08 2020-07-06 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用 Active JP7550211B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024079169A JP7792461B2 (ja) 2019-07-08 2024-05-15 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962871346P 2019-07-08 2019-07-08
US62/871,346 2019-07-08
PCT/EP2020/068936 WO2021004985A1 (en) 2019-07-08 2020-07-06 Rinse and method of use thereof for removing edge protection layers and residual metal hardmask components

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024079169A Division JP7792461B2 (ja) 2019-07-08 2024-05-15 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用

Publications (3)

Publication Number Publication Date
JP2022540086A JP2022540086A (ja) 2022-09-14
JP2022540086A5 true JP2022540086A5 (https=) 2023-03-27
JP7550211B2 JP7550211B2 (ja) 2024-09-12

Family

ID=71523150

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022500551A Active JP7550211B2 (ja) 2019-07-08 2020-07-06 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用
JP2024079169A Active JP7792461B2 (ja) 2019-07-08 2024-05-15 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024079169A Active JP7792461B2 (ja) 2019-07-08 2024-05-15 洗浄剤並びにエッジ保護層及び残留金属ハードマスク成分を除去するためのそれの使用

Country Status (6)

Country Link
US (1) US12099305B2 (https=)
EP (1) EP3997520B1 (https=)
JP (2) JP7550211B2 (https=)
KR (1) KR102626153B1 (https=)
CN (1) CN114080570B (https=)
WO (1) WO2021004985A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240385522A1 (en) * 2023-05-15 2024-11-21 Samsung Sdi Co., Ltd. Composition for removing edge beads from metal containing resists, and method of forming patterns including step of removing edge beads utilizing the composition, and a system of forming patterns

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US6566315B2 (en) * 2000-12-08 2003-05-20 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
JP4585299B2 (ja) * 2004-12-09 2010-11-24 東京応化工業株式会社 リソグラフィー用リンス液及びそれを用いたレジストパターン形成方法
US7884062B2 (en) * 2006-02-23 2011-02-08 Tokyo Ohka Kogyo Co., Ltd. Cleaning liquid for lithography and cleaning method using same
SG177915A1 (en) 2006-12-21 2012-02-28 Advanced Tech Materials Liquid cleaner for the removal of post-etch residues
KR20100082012A (ko) * 2007-11-16 2010-07-15 이케이씨 테크놀로지, 인코포레이티드 반도체 기판으로부터의 금속 하드 마스크 에칭 잔류물의 제거를 위한 조성물
JP5639755B2 (ja) * 2008-11-27 2014-12-10 富士フイルム株式会社 有機溶剤を含有する現像液を用いたパターン形成方法及びこれに用いるリンス液
SG10201405263XA (en) * 2009-09-02 2014-11-27 Wako Pure Chem Ind Ltd Resist remover composition and method for removing resist using the composition
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JP5988438B2 (ja) 2012-08-02 2016-09-07 東京エレクトロン株式会社 塗布処理方法及び塗布処理装置
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US9201305B2 (en) 2013-06-28 2015-12-01 Az Electronic Materials (Luxembourg) S.A.R.L. Spin-on compositions of soluble metal oxide carboxylates and methods of their use
US9296922B2 (en) 2013-08-30 2016-03-29 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds as hardmasks and filling materials, their compositions and methods of use
US9409793B2 (en) 2014-01-14 2016-08-09 Az Electronic Materials (Luxembourg) S.A.R.L. Spin coatable metallic hard mask compositions and processes thereof
JP6350080B2 (ja) * 2014-07-31 2018-07-04 Jsr株式会社 半導体基板洗浄用組成物
JPWO2016104565A1 (ja) * 2014-12-26 2017-09-21 富士フイルム株式会社 有機系処理液およびパターン形成方法
US9499698B2 (en) 2015-02-11 2016-11-22 Az Electronic Materials (Luxembourg)S.A.R.L. Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
KR20180099681A (ko) * 2015-12-25 2018-09-05 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 수지, 조성물, 레지스트 패턴 형성방법, 및, 회로 패턴 형성방법
KR102610448B1 (ko) 2016-08-12 2023-12-07 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
CN110418811B (zh) 2017-03-16 2022-05-13 默克专利股份有限公司 光刻组合物及其使用方法
JP6426223B2 (ja) * 2017-03-31 2018-11-21 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体

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