JP2020514509A5 - - Google Patents

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Publication number
JP2020514509A5
JP2020514509A5 JP2019550834A JP2019550834A JP2020514509A5 JP 2020514509 A5 JP2020514509 A5 JP 2020514509A5 JP 2019550834 A JP2019550834 A JP 2019550834A JP 2019550834 A JP2019550834 A JP 2019550834A JP 2020514509 A5 JP2020514509 A5 JP 2020514509A5
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JP
Japan
Prior art keywords
polymer
masking
composition according
masking composition
molecular weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019550834A
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English (en)
Japanese (ja)
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JP2020514509A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/EP2018/056322 external-priority patent/WO2018167112A1/en
Publication of JP2020514509A publication Critical patent/JP2020514509A/ja
Publication of JP2020514509A5 publication Critical patent/JP2020514509A5/ja
Priority to JP2022116140A priority Critical patent/JP7437455B2/ja
Pending legal-status Critical Current

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JP2019550834A 2017-03-16 2018-03-14 リソグラフィ用組成物及びそれの使用法 Pending JP2020514509A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022116140A JP7437455B2 (ja) 2017-03-16 2022-07-21 リソグラフィ用組成物及びそれの使用法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762472208P 2017-03-16 2017-03-16
US62/472,208 2017-03-16
PCT/EP2018/056322 WO2018167112A1 (en) 2017-03-16 2018-03-14 Lithographic compositions and methods of use thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022116140A Division JP7437455B2 (ja) 2017-03-16 2022-07-21 リソグラフィ用組成物及びそれの使用法

Publications (2)

Publication Number Publication Date
JP2020514509A JP2020514509A (ja) 2020-05-21
JP2020514509A5 true JP2020514509A5 (https=) 2020-12-24

Family

ID=61655788

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2019550834A Pending JP2020514509A (ja) 2017-03-16 2018-03-14 リソグラフィ用組成物及びそれの使用法
JP2022116140A Active JP7437455B2 (ja) 2017-03-16 2022-07-21 リソグラフィ用組成物及びそれの使用法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022116140A Active JP7437455B2 (ja) 2017-03-16 2022-07-21 リソグラフィ用組成物及びそれの使用法

Country Status (7)

Country Link
US (1) US20200002568A1 (https=)
EP (1) EP3596155B1 (https=)
JP (2) JP2020514509A (https=)
KR (1) KR102456279B1 (https=)
CN (1) CN110418811B (https=)
TW (1) TWI806856B (https=)
WO (1) WO2018167112A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102937721B1 (ko) 2019-06-28 2026-03-12 램 리써치 코포레이션 금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 (bake) 전략들
KR102626153B1 (ko) * 2019-07-08 2024-01-16 메르크 파텐트 게엠베하 에지 보호층 및 잔류 금속 하드마스크 성분을 제거하기 위한 린스 및 이의 사용 방법
WO2021202681A1 (en) 2020-04-03 2021-10-07 Lam Research Corporation Pre-exposure photoresist curing to enhance euv lithographic performance
JP2023530299A (ja) 2020-06-22 2023-07-14 ラム リサーチ コーポレーション 金属含有フォトレジスト堆積のための表面改質
TWI799193B (zh) * 2021-12-27 2023-04-11 南亞科技股份有限公司 斜角蝕刻方法及半導體元件結構的製備方法
US12176218B2 (en) 2021-12-27 2024-12-24 Nanya Technology Corporation Bevel etching method
US12353129B2 (en) 2021-12-27 2025-07-08 Nanya Technology Corporation Method for preparing semiconductor device structure including bevel etching process
US12482665B2 (en) * 2023-02-03 2025-11-25 Nanya Technology Corporation Method of manufacturing semiconductor structure
US12482664B2 (en) 2023-02-03 2025-11-25 Nanya Technology Corporation Method of manufacturing semiconductor structure
JP2025027792A (ja) * 2023-08-17 2025-02-28 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN121925597A (zh) 2023-09-29 2026-04-24 默克专利股份有限公司 用于边缘保护层的可持续且更环保的解决方案的光刻组合物及其使用方法
WO2025101667A1 (en) * 2023-11-10 2025-05-15 Lam Research Corporation Diffusion barriers to reduce queue-time effects in euv lithography
EP4730035A1 (en) 2024-10-15 2026-04-22 Shin-Etsu Chemical Co., Ltd. Composition for forming wafer-edge-protection film, wafer-edge-protection film forming method, and patterning process

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578676A (en) * 1992-02-12 1996-11-26 Flaim; Tony Method for making polymers with intrinsic light-absorbing properties
US5234990A (en) * 1992-02-12 1993-08-10 Brewer Science, Inc. Polymers with intrinsic light-absorbing properties for anti-reflective coating applications in deep ultraviolet microlithography
JP2000176949A (ja) * 1998-12-14 2000-06-27 Sekisui Chem Co Ltd ポリサルホン樹脂フィルムの製造方法
US6420514B1 (en) * 2000-07-12 2002-07-16 Vision - Ease Lens, Inc. Transparent polysulfone articles with reduced spurious coloration
US7264913B2 (en) * 2002-11-21 2007-09-04 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
US20050260790A1 (en) * 2004-05-24 2005-11-24 Goodner Michael D Substrate imprinting techniques
JP4831324B2 (ja) * 2006-07-06 2011-12-07 日産化学工業株式会社 スルホンを含有するレジスト下層膜形成組成物
JP5297032B2 (ja) * 2007-12-18 2013-09-25 株式会社ダイセル 多孔質膜及びその製造方法
US8137874B2 (en) * 2008-01-23 2012-03-20 International Business Machines Corporation Organic graded spin on BARC compositions for high NA lithography
US20130189533A1 (en) * 2010-10-14 2013-07-25 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition for lithography containing polyether structure-containing resin
US8568958B2 (en) 2011-06-21 2013-10-29 Az Electronic Materials Usa Corp. Underlayer composition and process thereof
JP2013032327A (ja) * 2011-08-03 2013-02-14 Nissan Chem Ind Ltd ２以上のトリアジントリオン構造を有する化合物及びリソグラフィー用レジスト下層膜形成組成物
WO2013087592A2 (en) * 2011-12-16 2013-06-20 Solvay Specialty Polymers Usa, Llc Epoxy resin compositions
JP5988438B2 (ja) * 2012-08-02 2016-09-07 東京エレクトロン株式会社 塗布処理方法及び塗布処理装置
US9315636B2 (en) 2012-12-07 2016-04-19 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds, their compositions and methods
US9201305B2 (en) 2013-06-28 2015-12-01 Az Electronic Materials (Luxembourg) S.A.R.L. Spin-on compositions of soluble metal oxide carboxylates and methods of their use
US9296922B2 (en) 2013-08-30 2016-03-29 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds as hardmasks and filling materials, their compositions and methods of use
US9409793B2 (en) 2014-01-14 2016-08-09 Az Electronic Materials (Luxembourg) S.A.R.L. Spin coatable metallic hard mask compositions and processes thereof
US9499698B2 (en) 2015-02-11 2016-11-22 Az Electronic Materials (Luxembourg)S.A.R.L. Metal hardmask composition and processes for forming fine patterns on semiconductor substrates

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