Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/42—Stripping or agents therefor
  • G03F7/422—Stripping or agents therefor using liquids only
  • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/42—Stripping or agents therefor
  • G03F7/422—Stripping or agents therefor using liquids only
  • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
  • C11D7/22—Organic compounds
  • C11D7/26—Organic compounds containing oxygen
  • C11D7/263—Ethers
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
  • C11D7/22—Organic compounds
  • C11D7/26—Organic compounds containing oxygen
  • C11D7/265—Carboxylic acids or salts thereof
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/42—Stripping or agents therefor
  • G03F7/422—Stripping or agents therefor using liquids only
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P70/00—Cleaning of wafers, substrates or parts of devices
  • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
  • H10P70/54—Cleaning of wafer edges
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
  • C11D2111/10—Objects to be cleaned
  • C11D2111/14—Hard surfaces
  • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

• the disclosed subject matter relates to a rinse and the use thereof for removing an edge protection layer in lithographic patterning processes.
• the novel rinse is formulated to remove both the edge protection layer and residual hardmask components (e.g ., metals) from a wafer/substrate surface.
• multiple antireflective layers and hardmasks are used in advanced lithographic patterning processes.
• underlayers and/or antireflective coatings for the photoresist that act as a hardmask and are highly etch resistant during substrate etching are preferred.
• One approach has been to incorporate silicon, titanium, zirconium, aluminum or other metallic materials into a layer beneath the organic photoresist layer.
• another high carbon content antireflective or mask layer may be placed beneath the metal containing antireflective layer to create a tri-layer of high carbon film/hard mask film/photoresist.
• Such layers can be used to improve the lithographic performance of the imaging process.
• metal contamination in the lithographic and etch tools, as well as cross contamination between wafers during manufacturing can be problems that should be avoided.
• Iwao U.S. Patent No. 8,791,030
• a masking agent is supplied to an edge of the wafer/substrate and baked to form a masking fdm (a.k.a. an edge protection layer (“EPL”) or edge masking layer) at the edge of the wafer/substrate.
• EPL edge protection layer
• a hardmask composition is then coated on the wafer/substrate and the EPL.
• EBR edge bead remover
• PCT/EP2018/056322 (published as WO/2018/167112) entitled“Lithographic Compositions and Methods of Use Thereof,” which is incorporated herein by reference in its entirety.
• the compositions disclosed therein prevent metal contamination at substrate/wafer edges during the manufacture of electronic devices.
• PCT/EP2018/056322 further sets forth a general process for applying a masking agent to form an EPL in a method for manufacturing an electronic device as is illustrated in FIGs 2 a-f, herein.
• a metal hardmask composition or metal oxide photoresist composition (collectively a“hardmask” or“hardmask composition”) is applied onto the substrate and the EPL (see FIG. 2c).
• the EPL and the hardmask composition are then rinsed with an EBR and/or a backside rinse (“BR”) material to remove at least a portion of the hardmask composition that is in contact with the EPL (see FIG. 2d).
• a portion or portions of the hardmask composition in contact with the EPL may nevertheless remain even after rinsing with an EBR or BR.
• the hardmask composition can, for example, partially penetrate through the EPL or undercut the edge thereof. Consequently, some quantity of the hardmask and/or its components in contact with the EPL may not be removed during the EBR rinse. To date, no compositions or processes/method have been identified providing for the simultaneous removal of both the EPL and the remaining residual components (e.g., metals) of the hardmask.
• the step of removing the EPL must be followed by a subsequent processing step (e.g., rinsing with additional EBR) in which any remaining residual components of the hardmask are removed from the edge and proximate surfaces of the wafer/substrate.
• This additional step is both costly and time consuming, and thus inconsistent with enabling and/or maintaining commercially acceptable process times when an EPL is utilized.
• the disclosed subject matter addresses the shortcomings known in the art pertaining to the removal of an EPL and any remaining residual components of the hardmask.
• the disclosed subject matter provides compositions and manufacturing methods and processes for the quick and efficient removal of an applied EPL and the remaining hardmask components and residues from the edge and proximate surfaces of the wafer/substrate.
• the disclosed subject matter relates to a rinse for removing an EPL and residual hardmask components (e.g ., metals such as tin or titanium) from the edge of a wafer/substrate surface in lithographic processes where the rinse includes (i) between approximately 15% by weight and approximately 35% by weight of acetic acid and (ii) between approximately 85% by weight and approximately 65% by weight of a compound having structure B:
• an EPL and residual hardmask components e.g ., metals such as tin or titanium
• each of R a , R b , R c , R d , R e , R f , R g and R h may independently be hydrogen, a substituted or an unsubstituted alkyl group, which is preferably a Ci- 6 alkyl group, a substituted or an unsubstituted halogenated alkyl group, which is preferably a halogenated Ci_ 6 alkyl group, a substituted or an unsubstituted alkyl carbonyl group, which is preferably a Ci- 6 alkyl carbonyl group, a halogen, and a hydroxy group.
• the compound having structure B is anisole (i.e., where each of R a , R b , R c , R d , R e , R f , R g and R h in structure B is hydrogen).
• the disclosed subject matter relates to a rinse for removing an EPL and residual hardmask components (e.g., metals such as tin or titanium) from the edge of a wafer/substrate surface in lithographic processes where the rinse includes:
• Ri and R 2 are independently hydrogen or a halogen and R 3 is a halogen; and (ii) between approximately 99% by weight and approximately 90% by weight of a compound having structure B:
• each of R a , 3 ⁇ 4 > , R c , R d , R e , R f , R g and R h is independently a hydrogen, a substituted or an unsubstituted alkyl group, which is preferably a Ci-6 alkyl group, a substituted or an unsubstituted halogenated alkyl group, which is preferably a halogenated Ci_6 alkyl group, a substituted or an unsubstituted alkyl carbonyl group, which is preferably a Ci-6 alkyl carbonyl group, a halogen, and a hydroxy group.
• the compound having structure A is trifluoroacetic acid (i.e., where each of Ri, R2 and R3 in structure A is fluorine) or difluoroacetic acid (i.e., where R3 and one of Ri and R2 is fluorine and the other of Ri and R2 is hydrogen).
• the compound having structure B is anisole (i.e., where each of R a , R t> , R c , R d , R e , R f , R g and R h in structure B is hydrogen).
• the rinse is particularly effective at removing an EPL formed from the masking agents described and/or claimed in PCT/EP2018/056322 and residual hardmask components (e.g., metals such as tin or titanium) from the edge and proximate surfaces of a wafer/substrate surface in lithographic processes.
• the rinse solution is particularly effective for removing an EPL formed from the masking agents described and/or claimed in PCT/EP2018/056322.
• the masking agent is a masking agent described and/or claimed in PCT/EP2018/056322 where the masking agent includes a polymer unit having one or more of the following formulae:
• the rinse includes (i) between approximately 15% by weight and approximately 35% by weight of acetic acid and (ii) between approximately 85% by weight and approximately 65% by weight of anisole and/or a compound having structure B. In another aspect, the rinse includes (i) approximately 15% by weight of acetic acid and (ii) preferably approximately 85% by weight of anisole and/or a compound having structure B.
• the rinse includes (i) approximately 20% by weight of acetic acid and (ii) preferably approximately 80% by weight of anisole and/or a compound having structure B. In another aspect, the rinse includes (i) approximately 25% by weight of acetic acid and (ii) preferably approximately 75% by weight of anisole and/or a compound having structure B.
• the rinse includes (i) approximately 30% by weight of acetic acid and (ii) preferably approximately 70% by weight of anisole and/or a compound having structure B.
• the rinse includes (i) approximately 35% by weight of acetic acid and (ii) preferably approximately 65% by weight of anisole and/or a compound having structure B.
• the rinse includes (i) between approximately 1% by weight and approximately 10% by weight of trifluoroacetic acid and/or difluoroacetic acid and (ii) between approximately 99% by weight and approximately 90% by weight of anisole and/or a compound having structure B.
• the rinse includes (i) approximately 1% by weight of a halogenated acetic acid of structure A and (ii) preferably approximately 99% by weight of anisole and/or a compound having structure B.
• the halogenated acetic acid of structure A is at least one of trifluoroacetic acid and difluoroacetic acid.
• the rinse includes (i) approximately 2% by weight of a halogenated acetic acid of structure A and (ii) preferably approximately 98% by weight of anisole and/or a compound having structure B.
• the halogenated acetic acid of structure A is at least one of trifluoroacetic acid and difluoroacetic acid.
• the rinse includes (i) approximately 3% by weight of a halogenated acetic acid of structure A and (ii) approximately 97% by weight of anisole and/or a compound having structure B.
• the halogenated acetic acid of structure A is at least one of trifluoroacetic acid and difluoroacetic acid.
• the rinse includes (i) approximately 4% by weight of a halogenated acetic acid of structure A and (ii) preferably approximately 96% by weight of anisole and/or a compound having structure B.
• the halogenated acetic acid of structure A is at least one of trifluoroacetic acid and difluoroacetic acid.
• the rinse includes (i) approximately 5% by weight of a halogenated acetic acid of structure A and (ii) approximately 95% by weight of anisole and/or a compound having structure B.
• the halogenated acetic acid of structure A is at least one of trifluoroacetic acid and difluoroacetic acid.
• the rinse includes (i) approximately 6% by weight of a halogenated acetic acid of structure A and (ii) approximately 94% by weight of anisole and/or a compound having structure B.
• the halogenated acetic acid of structure A is at least one of trifluoroacetic acid and difluoroacetic acid.
• the rinse includes (i) approximately 7% by weight of a halogenated acetic acid of structure A and (ii) preferably approximately 93% by weight of anisole and/or a compound having structure B.
• the halogenated acetic acid of structure A is at least one of trifluoroacetic acid and difluoroacetic acid.
• the rinse includes (i) approximately 8% by weight of a halogenated acetic acid of structure A and (ii) approximately 92% by weight of anisole and/or a compound having structure B.
• the halogenated acetic acid of structure A is at least one of trifluoroacetic acid and difluoroacetic acid.
• the rinse includes (i) approximately 9% by weight of a halogenated acetic acid of structure A and (ii) approximately 91% by weight of anisole and/or a compound having structure B.
• the halogenated acetic acid of structure A is at least one of trifluoroacetic acid and difluoroacetic acid.
• the rinse includes (i) approximately 10% by weight of a halogenated acetic acid of structure A and (ii) preferably approximately 90% by weight of anisole and/or a compound having structure B.
• the halogenated acetic acid of structure A is at least one of trifluoroacetic acid and difluoroacetic acid.
• the disclosed subject matter relates to a method and process of using the rinse for removing an EPL and residual hardmask components (e.g ., metals such as tin or titanium) from the edge and proximate surfaces of a wafer/substrate in lithographic processes, including in the manufacture of electronic devices.
• an EPL and residual hardmask components e.g ., metals such as tin or titanium
• the method and process include the step of removing the EPL and residual hardmask components (e.g., metals such as tin or titanium) by washing the wafer/substrate with the rinse.
• the method and process may be referred to as a method of cleaning a wafer or substrate comprising washing the wafer or substrate with the rinse.
• the method and process include the step of treating a wafer/substrate edge and proximate surfaces with a masking agent to form an EPL.
• the masking agent is a masking agent described and/or claimed in PCT/EP2018/056322.
• the masking agent is a masking agent described and/or claimed in PCT/EP2018/056322 where the masking agent includes a polymer unit having one or more of the following formulae:
• the method and process include one or more additional steps selected from the group of: (a) heating the masking agent to form the EPL; (b) applying a hardmask composition to the substrate and the EPL; (c) removing at least a portion of the hardmask composition that is in contact with the EPL by rinsing the hardmask composition and EPL with an EBR and/or BR material; (d) heating the hardmask composition to form a hardmask; and (e) performing at least one post applied bake.
• the method and process includes sequentially performing, without intervening steps, the steps of (i) treating a wafer/substrate edge and proximate surfaces with a masking agent; (ii) heating the applied masking agent to form an EPL; (iii) applying a hardmask composition to the substrate and the EPL; (iv) removing at least a portion of the hardmask composition that is in contact with the EPL by rinsing the hardmask composition and EPL with an EBR and/or BR material; (v) heating the hardmask composition to form a hardmask; (vi) removing the EPL and residual hardmask components by washing the wafer/substrate with the rinse; and (vii) optionally performing at least one post applied bake.
• the sequential performance of the foregoing steps does not exclude performance of steps prior to or after the sequentially performed steps (e.g ., supplying a wafer/substrate).
• the masking agent is a masking agent described and/or claimed in PCT/EP2018/056322.
• the masking agent is a masking agent described and/or claimed in PCT/EP2018/056322 where the masking agent includes a polymer unit having one or more of the following formulae: .
• the disclosed subject matter relates to the method and process of applying and removing an edge protection layer and residual hardmask components (e.g ., metals such as tin or titanium) from a wafer/substrate that includes the steps of: (a) applying a masking agent on an edge and proximate surfaces of the wafer/substrate; (b) heating the masking agent to form the EPL on the edge and proximate surfaces of the wafer/substrate; (c) applying a hardmask composition to the wafer/substrate and the EPL; (d) removing at least a portion of the hardmask composition that is in contact with the EPL by rinsing the hardmask composition with at least one EBR and/or BR material; (e) heating the hardmask composition to form the hardmask; (f) washing the wafer/substrate with a rinse including (i) between approximately 15% by weight and approximately 35% by weight of acetic acid and (i
• the masking agent is a masking agent described and/or claimed in PCT/EP2018/056322.
• the masking agent is a masking agent described and/or claimed in PCT/EP2018/056322 where the masking agent includes a polymer unit having one or more of the following formulae:
• the disclosed subject matter relates to the method and process of applying and removing an edge protection layer and residual hardmask components (e.g ., metals such as tin or titanium) from a wafer/substrate that includes the steps of: (a) applying a masking agent on an edge and proximate surfaces of the wafer/substrate; (b) heating the masking agent to form the EPL on the edge and proximate surfaces of the wafer/substrate; (c) applying a hardmask composition to the wafer/substrate and the EPL; (d) removing at least a portion of the hardmask composition that is in contact with the EPL by rinsing the hardmask composition with at least one EBR and/or BR material; (e) heating the hardmask composition to form the hardmask; (f) washing the wafer/substrate with a rinse including (i) between approximately 1% by weight and approximately 10% by weight of halogenated acetic
• the masking agent is a masking agent described and/or claimed in PCT/EP2018/056322.
• the masking agent is a masking agent described and/or claimed in PCT/EP2018/056322 where the masking agent includes a polymer unit having one or more of the following formulae:
• the halogenated acetic acid of structure A is at least one of trifluoroacetic acid and difluoroacetic acid.
• FIG. 1 illustrates a wafer/substrate upon which an EPL is applied
• FIGs. 2a-f illustrates a schematic representation of one embodiment of a method and process for using the rinse solutions disclosed herein.
• a masking agent is applied onto an edge of a substrate.
• the masking agent is heated to form an EPL.
• a hardmask composition is applied onto the substrate and the EPL.
• the hardmask composition and EPL are rinsed with an EBR to remove at least a portion of the hardmask composition that is in contact with the EPL.
• the hardmask composition is heated to form a hardmask.
• the EPL and residual hardmask components e.g., metals such as tin or titanium
• FIG. 3 is a graph illustrating residual metal (i.e., titanium) content present on the wafer/substrate surface following removal of the EPL from the edge of a wafer/substrate surface using different formulations of the disclosed rinse that includes acetic acid and anisole; and [0040]
• FIG. 4 is a graph illustrating residual metal (i.e., titanium) content present on the wafer/substrate surface following removal of the EPL from the edge of a wafer/substrate surface using different formulations of the disclosed rinse that includes trifluoroacetic acetic acid and anisole.
• Ci_ 6 alkyl refers to an alkyl chain having a chain of between 1 and 6 carbons (e.g., methyl, ethyl, propyl, butyl, pentyl and hexyl). Unless specifically stated otherwise, the chain can be linear or branched.
• alkyl refers to hydrocarbon groups which can be linear, branched (e.g., methyl, ethyl, propyl, isopropyl, tert-butyl and the like), cyclic (e.g., cyclohexyl, cyclopropyl, cyclopentyl and the like) or multicyclic (e.g., norbornyl, adamantly and the like). These alkyl moieties may be substituted or unsubstituted.
• Halogenated alkyl refers to a linear, cyclic or branched saturated alkyl group as defined above in which one or more of the hydrogens has been replaced by a halogen (e.g., F, Cl, Br and I).
• a fluorinated alkyl (a.k.a.“fluoroalkyl”) refers to a linear, cyclic or branched saturated alkyl group as defined above in which one or more of the hydrogens has been replaced by fluorine (e.g ., trifluoromethyl, pefluoroethyl, 2,2,2-trifluoroethyl, prefluoroisopropyl, perfluorocyclohexyl and the like).
• fluorine e.g ., trifluoromethyl, pefluoroethyl, 2,2,2-trifluoroethyl, prefluoroisopropyl, perfluorocyclohexyl and the like.
• Alkoxy refers to an alkyl group as defined above which is attached through an oxy (-0-) moiety (e.g., methoxy, ethoxy, propoxy, butoxy, 1,2-isopropoxy, cyclopentyloxy, cyclohexyloxy and the like). These alkoxy moieties may be substituted or unsubstituted.
• Halo or“halide” refers to a halogen (e.g., F, Cl, Br and I).
• Haldroxy (a.k.a.“hydroxyl”) refers to an -OH group.
• the term“substituted” when referring to an alkyl, alkoxy, fluorinated alkyl and the like refers to one of these moieties which also contains one or more substituents including, but not limited, to the following substituents: alkyl, substituted alkyl, unsubstituted aryl, substituted aryl, alkyloxy, alkylaryl, haloalkyl, halide, hydroxy, amino and amino alkyl.
• the term“unsubstituted” refers to these same moieties where no substituents apart from hydrogen are present.
• the disclosed subject matter relates to a rinse that includes (i) acetic acid and/or halogenated acetic acid of structure A and (ii) anisole and/or derivatives of anisole (i.e., compounds other than anisole falling with the scope of structure B) that can be utilized for removing an EPL and residual hardmask components (e.g ., metals such as tin or titanium) from the edge and proximate surfaces of a wafer/substrate surface in lithographic processes.
• anisole and/or derivatives of anisole i.e., compounds other than anisole falling with the scope of structure B
• an EPL and residual hardmask components e.g ., metals such as tin or titanium
• the rinse includes (i) acetic acid (CAS 64-19-7) or halogenated acetic acid of structure A and (ii) anisole (CAS 100-66-3; a.k.a. methoxybenzene or methyl phenyl ether) and/or derivatives of anisole in varying concentrations.
• the rinse includes, for example, between approximately 15% by weight to approximately 35% by weight of acetic acid and between approximately 85% by weight and approximately 65% by weight of anisole and/or derivatives of anisole.
• the rinse can alternatively include between approximately 1% by weight and approximately 10% by weight of halogenated acetic acid of structure A and between approximately 99% by weight and approximately 90% by weight of anisole and/or a compound having structure B.
• the disclosed rinse can include amounts of acetic acid exceeding approximately 35% by weight or amounts of halogenated acetic acid of structure A exceeding approximately 10% by weight.
• the rinse includes approximately 20% by weight of acetic acid and approximately 75% by weight of anisole and/or the derivatives of anisole. In another embodiment, the rinse includes approximately 30% by weight of acetic acid and approximately 70% by weight of anisole and/or the derivatives of anisole.
• the rinse can include approximately 32.5% by weight of acetic acid and approximately 67% by weight of anisole and/or the derivatives of anisole. In yet another embodiment, the rinse can include approximately 18.5% by weight of acetic acid and approximately 75% by weight of anisole and/or the derivatives of anisole. In further embodiments, the rinse can include approximately 2% by weight of halogenated acetic acid of structure A and approximately 98% by weight of anisole and/or the derivatives of anisole. In further embodiments, the rinse can include approximately 4% by weight of halogenated acetic acid of structure A and approximately 96% by weight of anisole and/or the derivatives of anisole. In yet further embodiments, the rinse can include approximately 10% by weight of halogenated acetic acid of structure A and approximately 90% by weight of anisole and/or the derivatives of anisole.
• a rinse that includes between“approximately 15% by weight and approximately 35% by weight” of acetic acid and/or“approximately 1% by weight and approximately 10% by weight” of halogenated acetic acid of structure A can include ⁇ 10% of the weight percent of acetic acid and/or halogenated acetic acid of structure A.
• an embodiment of the rinse including“approximately 15% by weight” of acetic acid can include between 13.5% by weight and 16.5% by weight of acetic acid.
• An embodiment of the rinse including“approximately 20% by weight of acetic acid” can include between 18% by weight and 22% by weight of acetic acid.
• An embodiment of the rinse including “approximately 30% by weight” of acetic acid can include between 27% by weight and 33% by weight of acetic acid.
• an embodiment of the rinse including“approximately 2% by weight” of halogenated acetic acid of structure A can include between 1.8% by weight and 2.2% by weight of halogenated acetic acid of structure A.
• An embodiment of the rinse including “approximately 4% by weight” of halogenated acetic acid of structure A can include between 3.6% by weight and 4.4% by weight of halogenated acetic acid of structure A.
• An embodiment of the rinse including“approximately 10% by weight” of halogenated acetic acid of structure A can include between 9% by weight and 11% by weight of halogenated acetic acid of structure A.
• a rinse that includes between“approximately 15% by weight and approximately 35% by weight” of acetic acid and/or“approximately 1% by weight and approximately 10% by weight” of halogenated acetic acid of structure A can include ⁇ 5% of the weight percent of acetic acid and/or halogenated acetic acid of structure A.
• an embodiment of the rinse including“approximately 15% by weight” of acetic acid can include between 14.25% by weight and 15.75% by weight of acetic acid.
• An embodiment of the rinse including“approximately 20% by weight” of acetic acid can include between 19% by weight and 21% by weight of acetic acid.
• An embodiment of the rinse including“approximately 30% by weight” of acetic acid can include between 28.5% by weight and 31.5% by weight of acetic acid.
• an embodiment of the rinse including“approximately 2% by weight” of halogenated acetic acid of structure A can include between 1.9% by weight and 2.1% by weight of halogenated acetic acid of structure A.
• An embodiment of the rinse including“approximately 4% by weight” of halogenated acetic acid can include between 3.8% by weight and 4.2% by weight of halogenated acetic acid of structure A.
• An embodiment of the rinse including“approximately 10% by weight” of halogenated acetic acid of structure A can include between 9.5% by weight and 10.5% by weight of halogenated acetic acid of structure A.
• a rinse that includes between“approximately 85% by weight and approximately 65% by weight” of anisole and/or derivatives of anisole can include ⁇ 10% of the weight percent of anisole and/or derivatives of anisole.
• an embodiment of the rinse including“approximately 85% by weight” of anisole and/or derivatives of anisole can include between 93.5% by weight and 76.5% by weight of anisole and/or derivatives of anisole.
• An embodiment of the rinse including“approximately 80% by weight” of anisole and/or derivatives of anisole can include between 88% by weight and 72% by weight of anisole and/or derivatives of anisole.
• An embodiment of the rinse including“approximately 70% by weight” of anisole and/or derivatives of anisole can include between 77% by weight and 63% by weight of anisole and/or derivatives of anisole.
• an embodiment of the rinse including“approximately 85% by weight” of anisole and/or derivatives of anisole can include between 89.25% by weight and 80.75% by weight of anisole and/or derivatives of anisole.
• An embodiment of the rinse including“approximately 80% by weight” of anisole and/or derivatives of anisole can include between 84% by weight and 76% by weight of anisole and/or derivatives of anisole.
• An embodiment of the rinse including“approximately 70% by weight” of anisole and/or derivatives of anisole can include between 76.5% by weight and 73.5% by weight of anisole and/or derivatives of anisole.
• the rinse consists essentially of (i) acetic acid and/or halogenated acetic acid of structure and (ii) anisole and/or derivatives of anisole in varying concentrations.
• the combined amounts of acetic acid and/or halogenated acetic acid of structure A with anisole and/or derivatives of anisole do not equal 100% by weight, and can include other ingredients (e.g ., additional solvent(s), including water, common additives and/or impurities) that do not materially change the effectiveness of the rinse.
• the rinse can include acetic acid and/or halogenated acetic acid of structure A acid having different quantities of water.
• the rinse can include acetic acid and/or halogenated acetic acid of structure A having in excess of 1% of water by weight.
• the rinse can include anhydrous (a.k.a. glacial) acetic acid (i.e., acetic acid having less that 1% by weight of water).
• Such embodiments can also, for example, include different technical grades (e.g., reagent grade, trace grade, ultratrace grade, electronic grade, HPLC grade, etc.) of acetic acid, anhydrous/glacial acetic acid and/or halogenated acetic acid of structure A with varying quantities of impurities.
• the rinse consists of (i) acetic acid and/or halogenated acetic acid of structure A and (ii) anisole and/or derivatives of anisole in varying concentrations.
• the combined amounts of acetic acid and/or halogenated acetic acid of structure A and anisole and/or derivatives of anisole equal approximately 100% by weight but may include other small and/or trace amounts of impurities that are present in such small quantities that they do not materially change the effectiveness of the rinse.
• the rinse can contain 2% by weight or less of total impurities and/or other ingredients (e.g ., additional solvent(s), including water).
• the rinse can contain 1% by weight or less than of total impurities and/or other ingredients (e.g., additional solvent(s), including water). In a further embodiment, the rinse can contain 0.05% by weight or less than of total impurities and/or other ingredients (e.g., additional solvent(s), including water).
• Such embodiments can, for example, include anhydrous/glacial acetic acid.
• Such embodiments can also, for example, include different technical grades (e.g., reagent grade, trace grade, ultratrace grade, electronic grade, HPLC grade, etc.) of acetic acid, anhydrous/glacial acetic acid and/or halogenated acetic acid of structure A with varying quantities of impurities.
• Such embodiments can also include, for example, trace amounts of metal impurities present at quantities well-below 0.05% by weight (e.g., at the ppb level).
• halogenated acetic acid of structure A that can be used in the disclosed rinse include (i) those halogenated acetic acid compounds of structure A where Ri and R 2 are each hydrogen and R 3 is a halogen selected from among fluorine, bromine, iodine and chlorine, (ii) those halogenated acetic acid compounds of structure A where two or more of Ri, R 2 and R 3 are the same halogen selected from among fluorine, bromine, iodine and chlorine, and (iii) those halogenated acetic acid compounds of structure A where two or more of Ri, R 2 and R 3 are a different halogen selected from among fluorine, bromine, iodine and chlorine.
• Examples of such compounds include, but are not limited to, fluoroacetic acid, iodoacetic acid, bromo acetic acid, chloroacetic acid, difluoracetic acid, trifluoracetic acid, diiodoracetic acid, triiodoracetic acid, dibromoracetic acid, tribromoracetic acid, dichlororacetic acid, trichlororacetic acid as well as halogenated acetic acids including two or more different halogens (e.g., where two or more of Ri, R 2 and R 3 in structure A are each a different halogen).
• the rinse can further include a mixture of two or more halogenated acetic acids of structure A.
• the disclosed rinse includes mixtures of acetic acid or halogenated acetic acid of structure A and anisole and/or derivatives of anisole of structure B:
• each of R a , R b , R c , R d , R e , R f , R g and R h may independently be hydrogen, a substituted or an unsubstituted alkyl group, a substituted or an unsubstituted halogenated alkyl group, a substituted or an unsubstituted alkyl carbonyl group, a halogen, and a hydroxy group as described above.
• anisole suitable for use in the described and/or claimed rinse examples include, but are not limited to, halogenated anisole compounds (e.g ., where one or more of R a , R b , R c , R d and R e is each independently a fluorine, iodine, bromine or chlorine).
• the disclosed rinses are suitable for removing an EPL formed on the edge and proximate surfaces of a wafer/substrate.
• the disclosed rinses are adapted for removing an EPL formed from the masking agents or compositions described and/or claimed in PCT/EP2018/056322, including those having the following components:
• A is a direct bond or A is selected from the group of structure (II): Ri, R 2 , R 3 , R t and R 5 are each independently selected from the group of H, halo, (C 1-3 ) alkyl, (C 1-3 ) fluorinated alkyl, hydroxy, (C 1-3 ) alkoxy, and (C 1-3 ) alkyl carbonyl; and
• q, r, s and t are each independently selected from the group consisting of 0, 1, 2, 3 and 4;
• the polymer has an average molecular weight of less than 50000.
• the rinses are particularly effective where the polymer unit having structure (I) shown above includes one of, and preferably is one of:
• the EPL can for example be applied at a width of at least approximately 0.5 mm. Alternatively, the EPL can be applied at a width of at least approximately 0.75 mm. Further, the EPL can be applied at a width of not more than approximately 2.0 mm. Alternatively, the EPL can be applied at a width of not more than approximately 1.0 mm.
• the EPL when the EPL is applied to a wafer/substrate 1, the EPL is applied to the edge 2 of the wafer/substrate, as well as on one or more surfaces proximate to the edge of the wafer/substrate (i.e., the top surface 3 and/or bottom surface 4) of the wafer/substrate.
• the EPL can be positioned to cover the edge of the substrate and to extend over the front and/or backside of the substrate.
• the EPL can be applied on the proximate surfaces of the edge and extend from approximately 0.5 mm to approximately 2.0 mm in width on the top surface of the wafer/substrate, over the edge and then approximately 2.5 mm in width on the backside of the wafer/substrate edge.
• the disclosed rinses advantageously provide for the simultaneous removal of an applied EPL and remaining hardmask components from the edge and proximate surfaces of the wafer/substrate (e.g., where the hardmask has penetrated or undercut the EPL).
• residual hardmask components that can be removed with the disclosed rinses include the ingredients of both metal hardmask compositions and metal oxide photoresist compositions used in lithographic manufacturing processes.
• Suitable metal hardmask and metal oxide photoresist compositions include, but are not limited to, those described in US Patent Nos. 9,315,636; 8,568,958, 9,201,305; 9,296,922; 9,409,793; and 9,499,698 and US Patent Application Nos.
• the hardmask components removed or that can be removed by the disclosed rinses include different metals, including tin, titanium, zirconium, tantalum, lead, antimony, thallium, indium, ytterbium, gallium, hafnium, aluminum, magnesium, molybdenum, germanium, iron, cobalt, nickel, copper, zinc, gold, silver, cadmium, tungsten and platinum.
• the rinses are effective at removing residual hardmask components regardless of the methodology used for applying the hardmask.
• any of a variety of techniques can be used to apply the hardmask composition onto the wafer/substrate surface to form the hardmask in the disclosed methods/processes. Suitable techniques include, but are not limited to, spin-on coating, chemical vapor deposition (CVD) and atomic layer deposition (ALD).
• CVD chemical vapor deposition
• ALD atomic layer deposition
• spin coating preferably at least one casting solvent is used, wherein the solvent used should not deleteriously affect the EPL.
• suitable casting solvents for the hardmask composition include, but are not limited to, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol methyl ether (PGME), ethyl lactate, methoxyethanol, ethoxypropanol, ethoxyethanol, 1 -pentanol, 4-methyl-2- pentanol and mixtures thereof.
• PMEA propylene glycol monomethyl ether acetate
• PGME propylene glycol methyl ether
• ethyl lactate methoxyethanol, ethoxypropanol, ethoxyethanol, 1 -pentanol, 4-methyl-2- pentanol and mixtures thereof.
• Suitable techniques include, but are not limited to, chemical mechanical polishing (CMP), plasma etching, and wet etching.
• CMP chemical mechanical polishing
• plasma etching plasma etching
• wet etching any of a variety of solvents (such as EBRs) can be used provided that the solvent does not deleteriously affect the EPL or hardmask.
• Suitable EBRs include, but are not limited to, PGMEA, PGME, ethyl lactate, methoxyethanol, ethoxypropanol, ethoxy ethanol, 1-pentanol, 4-methyl-2-pentanol and mixtures thereof.
• the hardmask composition can be treated by a variety of techniques to form the hardmask.
• the hardmask composition can be treated by heating at a temperature between approximately 150 °C and approximately 450 °C and/or for a time between approximately 60 seconds and approximately 120 seconds.
• Typical electronic devices that can be manufactured using the compositions and methods of the disclosed subject matter include, but are not limited to, computer chips, integrated circuits, and semiconductor devices.
• MUM 082 is a metal hardmask composition containing titanium available from EMD
• EPL 003 is a polysulfone in anisole available from EMD performance Materials
• U98 polymer is a high carbon-containing polymer available from EMD Performance
• ArF Thinner is a 70/30 (by weight) mixture of PGMEA/PGME available from EMD
• MHM Metal Hard Mask
• Example 1 The MHM formulation was spin coated (7500 rpm) without any bake on a wafer and the wafer was soaked in 100% anisole on a lab hotplate until all the film was removed. The wafer was then washed with an acid solution of HC1 and hydrogen peroxide for 6 minutes that was prepared by adding approximately 30.4 g of water to a flask to which 35.7 g of hydrogen peroxide (30%) and 33.9 g of HC1 (37%) were added with stirring (approximately 1 hour). The titanium content of the extracted solution was determined by ICP-MS to be 89.14 ppb as described above.
• Example 2 The MHM formulation was spin coated (7500 rpm) without any bake on a wafer and the wafer was soaked in a mixture of 5% (by weight) of acetic acid and 95% (by weight) of anisole on lab hotplate until all the film was removed. The wafer was then washed with an acid solution of HC1 and hydrogen peroxide for 6 minutes that was prepared by adding approximately 30.4 g of water to a flask to which 35.7 g of hydrogen peroxide (30%) and 33.9 g of HC1 (37%) were added with stirring (approximately 1 hour). The titanium content of the extracted solution was determined by ICP-MS to be 89.14 ppb as described above.
• Example 3 The MHM formulation was spin coated (7500 rpm) without any bake on a wafer and the wafer was soaked in a mixture of 10% (by weight) of acetic acid and 90% (by weight) of anisole on lab hotplate until all the film was removed. The wafer was then washed with an acid solution of HC1 and hydrogen peroxide for 6 minutes that was prepared by adding approximately 30.4 g of water to a flask to which 35.7 g of hydrogen peroxide (30%) and 33.9 g of HC1 (37%) were added with stirring (approximately 1 hour). The titanium content of the extracted solution was determined by ICP-MS to be 90.33 ppb as described above.
• Example 4 The MHM formulation was spin coated (7500 rpm) without any bake on a wafer and the wafer was soaked in a mixture of 20% (by weight) of acetic acid and 80% (by weight) of anisole on lab hotplate until all the film was removed. The wafer was then washed with an acid solution of HC1 and hydrogen peroxide for 6 minutes that was prepared by adding approximately 30.4 g of water to a flask to which 35.7 g of hydrogen peroxide (30%) and 33.9 g of HC1 (37%) were added with stirring (approximately 1 hour). The titanium content of the extracted solution was determined by ICP-MS to be 58.73 ppb as described above.
• Example 5 The MHM formulation was spin coated (7500 rpm) without any bake on a wafer and the wafer was soaked in a mixture of 30% (by weight) of acetic acid and 70% (by weight) of anisole on lab hotplate until all the film was removed. The wafer was then washed with an acid solution of HC1 and hydrogen peroxide for 6 minutes that was prepared by adding approximately 30.4 g of water to a flask to which 35.7 g of hydrogen peroxide (30%) and 33.9 g of HC1 (37%) were added with stirring (approximately 1 hour). The titanium content of the extracted solution was determined by ICP-MS to be 58.84 ppb as described above.
• Example 6 The MHM formulation was spin coated (7500 rpm) without any bake on a wafer and the wafer was soaked in a mixture of 2% (by weight) of trifluoro acetic acid and 98% (by weight) of anisole on lab hotplate until all the film was removed. The wafer was then washed with an acid solution of HC1 and hydrogen peroxide for 6 minutes that was prepared by adding approximately 30.4 g of water to a flask to which 35.7 g of hydrogen peroxide (30%) and 33.9 g of HC1 (37%) were added with stirring (approximately 1 hour). The titanium content of the extracted solution was determined by ICP-MS to be 49.2 ppb as described above.
• Example 7 The MHM formulation was spin coated (7500 rpm) without any bake on a wafer and the wafer was soaked in a mixture of 4% (by weight) of trifluoro acetic acid and 96% (by weight) of anisole on lab hotplate until all the film was removed. The wafer was then washed with an acid solution of HC1 and hydrogen peroxide for 6 minutes that was prepared by adding approximately 30.4 g of water to a flask to which 35.7 g of hydrogen peroxide (30%) and 33.9 g of HC1 (37%) were added with stirring (approximately 1 hour). The titanium content of the extracted solution was determined by ICP-MS to be 50.89 ppb as described above.
• Example 8 The MHM formulation was spin coated (7500 rpm) without any bake on a wafer and the wafer was soaked in a mixture of 10% (by weight) of trifluoro acetic acid and 90% (by weight) of anisole on lab hotplate until all the film was removed. The wafer was then washed with an acid solution of HC1 and hydrogen peroxide for 6 minutes that was prepared by adding approximately 30.4 g of water to a flask to which 35.7 g of hydrogen peroxide (30%) and 33.9 g of HC1 (37%) were added with stirring (approximately 1 hour). The titanium content of the extracted solution was determined by ICP-MS to be 49.13 ppb as described above.
• the rinses including between approximately 20% by weight and 30% by weight of acetic acid and between approximately 80% by weight and 70% by weight of anisole unexpectedly reduced residual metal content by approximately 35% compared to other mixtures of acetic acid and anisole.
• trifluoracetic acid i.e., a halogenated acetic acid compounds of structure A
• the use of trifluoracetic acid also evidences a significant and unexpected drop in residual quantities of the applied hardmask (i.e., the amount of metal residue).
• drop in residual quantities of titanium was observed when using rinses including between approximately 1% by weight and 10% by weight of trifluoroacetic acid and between approximately 99% by weight and 90% by weight of anisole.
• the rinses including between approximately 2% by weight and 10% by weight of trifluoroacetic acid and between approximately 98% by weight and 90% by weight of anisole were unexpectedly somewhat more effective at removing residual metal content than the acetic acid formulations on Table 1.
• the trifluoroacetic acid- containing rinses were demonstrated to be approximately 15% more effective at removing residual quantities of the applied hardmask based upon the average remaining metal residue (58.76 ppb) of the most effective acetic acid/anisole rinses of Table 1 (i.e., 20/80 and 30/70) compared to the average remaining metal residue (49.74 ppb) of the trifluoroacetic acid/anisole rinses of Table 2.

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• 2020
  • 2020-07-06 KR KR1020227004116A patent/KR102626153B1/ko active Active
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