JP2022529609A5 - - Google Patents

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Publication number
JP2022529609A5
JP2022529609A5 JP2021560249A JP2021560249A JP2022529609A5 JP 2022529609 A5 JP2022529609 A5 JP 2022529609A5 JP 2021560249 A JP2021560249 A JP 2021560249A JP 2021560249 A JP2021560249 A JP 2021560249A JP 2022529609 A5 JP2022529609 A5 JP 2022529609A5
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JP
Japan
Prior art keywords
approximately
power
process chamber
substrate
voltage
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Application number
JP2021560249A
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English (en)
Japanese (ja)
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JP2022529609A (ja
JP7618579B2 (ja
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Priority claimed from PCT/US2020/028146 external-priority patent/WO2020214607A1/en
Publication of JP2022529609A publication Critical patent/JP2022529609A/ja
Publication of JP2022529609A5 publication Critical patent/JP2022529609A5/ja
Application granted granted Critical
Publication of JP7618579B2 publication Critical patent/JP7618579B2/ja
Active legal-status Critical Current
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JP2021560249A 2019-04-15 2020-04-14 静電チャックプロセス Active JP7618579B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962834162P 2019-04-15 2019-04-15
US62/834,162 2019-04-15
PCT/US2020/028146 WO2020214607A1 (en) 2019-04-15 2020-04-14 Electrostatic chucking process

Publications (3)

Publication Number Publication Date
JP2022529609A JP2022529609A (ja) 2022-06-23
JP2022529609A5 true JP2022529609A5 (cg-RX-API-DMAC7.html) 2023-04-24
JP7618579B2 JP7618579B2 (ja) 2025-01-21

Family

ID=72747735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021560249A Active JP7618579B2 (ja) 2019-04-15 2020-04-14 静電チャックプロセス

Country Status (7)

Country Link
US (1) US12100609B2 (cg-RX-API-DMAC7.html)
JP (1) JP7618579B2 (cg-RX-API-DMAC7.html)
KR (1) KR102905858B1 (cg-RX-API-DMAC7.html)
CN (1) CN113748227B (cg-RX-API-DMAC7.html)
SG (1) SG11202110823VA (cg-RX-API-DMAC7.html)
TW (1) TWI869392B (cg-RX-API-DMAC7.html)
WO (1) WO2020214607A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7536540B2 (ja) 2020-07-16 2024-08-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US12606907B2 (en) * 2021-04-30 2026-04-21 Applied Materials, Inc. Method and apparatus with high conductance components for chamber cleaning
US11869795B2 (en) * 2021-07-09 2024-01-09 Applied Materials, Inc. Mesa height modulation for thickness correction
JP2025534287A (ja) * 2022-09-30 2025-10-15 アプライド マテリアルズ インコーポレイテッド アルゴン送達用大径多孔質プラグと２段階ソフトチャック法

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US7541283B2 (en) * 2002-08-30 2009-06-02 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
JP4013745B2 (ja) 2002-11-20 2007-11-28 松下電器産業株式会社 プラズマ処理方法
US6897128B2 (en) * 2002-11-20 2005-05-24 Matsushita Electric Industrial Co., Ltd. Method of manufacturing semiconductor device, plasma processing apparatus and plasma processing method
US20060046506A1 (en) 2004-09-01 2006-03-02 Tokyo Electron Limited Soft de-chucking sequence
JP4468194B2 (ja) 2005-01-28 2010-05-26 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
US20070091541A1 (en) 2005-10-20 2007-04-26 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor using feed forward thermal control
KR101312292B1 (ko) 2006-12-11 2013-09-27 엘아이지에이디피 주식회사 플라즈마 처리장치의 기판 파손 방지장치 및 그 방법
US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
JP5372419B2 (ja) * 2008-06-25 2013-12-18 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP5063520B2 (ja) * 2008-08-01 2012-10-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
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JP6559430B2 (ja) * 2015-01-30 2019-08-14 東京エレクトロン株式会社 被処理体を処理する方法
WO2017100136A1 (en) 2015-12-07 2017-06-15 Applied Materials, Inc. Method and apparatus for clamping and declamping substrates using electrostatic chucks
CN107546168B (zh) 2016-06-24 2020-04-28 北京北方华创微电子装备有限公司 一种晶片吸附方法、下电极系统和半导体处理装置
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