JP2022521267A - 湿式化学によるSi3N4選択的除去の必要性 - Google Patents
湿式化学によるSi3N4選択的除去の必要性 Download PDFInfo
- Publication number
- JP2022521267A JP2022521267A JP2021549173A JP2021549173A JP2022521267A JP 2022521267 A JP2022521267 A JP 2022521267A JP 2021549173 A JP2021549173 A JP 2021549173A JP 2021549173 A JP2021549173 A JP 2021549173A JP 2022521267 A JP2022521267 A JP 2022521267A
- Authority
- JP
- Japan
- Prior art keywords
- product
- etching solution
- precipitate
- etching
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 39
- 238000007704 wet chemistry method Methods 0.000 title 1
- 238000005530 etching Methods 0.000 claims abstract description 111
- 239000006227 byproduct Substances 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 53
- 238000012545 processing Methods 0.000 claims abstract description 48
- 239000002244 precipitate Substances 0.000 claims abstract description 37
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 39
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 34
- 238000001556 precipitation Methods 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 239000013043 chemical agent Substances 0.000 claims description 18
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 17
- 238000010129 solution processing Methods 0.000 claims description 15
- 239000012777 electrically insulating material Substances 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 238000012544 monitoring process Methods 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 44
- 238000011282 treatment Methods 0.000 abstract description 12
- 238000010586 diagram Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000002253 acid Substances 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 239000000615 nonconductor Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 101150044878 US18 gene Proteins 0.000 description 2
- 239000004480 active ingredient Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000002808 molecular sieve Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 125000005624 silicic acid group Chemical group 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000016571 aggressive behavior Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000003334 potential effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- -1 siloxanes Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D21/00—Separation of suspended solid particles from liquids by sedimentation
- B01D21/0012—Settling tanks making use of filters, e.g. by floating layers of particulate material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D21/00—Separation of suspended solid particles from liquids by sedimentation
- B01D21/01—Separation of suspended solid particles from liquids by sedimentation using flocculating agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
Abstract
Description
本出願は、2019年2月20日に出願された米国仮出願第62/808,646号に基づく優先権を主張し、その全体が参照により本明細書に組み込まれる。
本開示は、一般に、半導体の設計および製造に関する。具体的には、本発明は、集積回路デバイスから電気絶縁体層を除去する方法に関する。
本開示の好ましい実施形態は、添付図面を参照して以下に記載され得る。以下の説明では、周知の機能または構成は、不必要な詳細で開示を不明瞭にする可能性があるため、詳細には記載されていない。本開示に関して、以下の用語および定義が適用されるものとする。
Claims (26)
- 半導体デバイス構造から電気絶縁性材料を除去するためのシステムであって、
前記半導体デバイス構造を受け容れるように構成された処理チャンバであって、前記半導体デバイス構造が前記処理チャンバ内でエッチング液に曝露されることにより、前記構造の一部分が除去されるとともに、副生成物が生成して前記エッチング液に入る、処理チャンバと、
前記副生成物を沈殿物に変換し、該沈殿物を除去することにより、前記副生成物を連続的に除去するように構成された、副生成物除去部と、
前記副生成物が除去された後の前記エッチング液を前記処理チャンバ内に再導入する、循環ラインと
を備えることを特徴とする、システム。 - 前記副生成物除去部が、沈殿促進剤供給部を備える、請求項1に記載のシステム。
- 前記沈殿促進剤供給部がフィルタを備え、
前記フィルタは、前記沈殿物を除去するように構成されている、請求項2に記載のシステム。 - 前記副生成物除去部が、前記フィルタの上流側に設けられた沈殿チャンバをさらに備え、
前記沈殿促進剤供給部は、前記沈殿チャンバに前記沈殿促進剤を供給するように構成されている、請求項3に記載のシステム。 - エッチング液処理部をさらに含み、
前記エッチング液処理部は、前記エッチング液を調製するように構成されている、請求項1~4のいずれか一項に記載のシステム。 - 前記エッチング液処理部が、前記エッチング液を貯留するように構成されている、請求項1~5のいずれか一項に記載のシステム。
- 前記エッチング液処理部が、化学薬剤を供給する化学薬剤供給部を備える、請求項5又は6に記載のシステム。
- 前記エッチング液処理部が、前記化学薬剤を混合して貯留するための空洞を含む、請求項5~7のいずれか一項に記載のシステム。
- 前記フィルタが、約0.22μm以下の直径を有する、請求項3~8のいずれか一項に記載のシステム。
- 半導体デバイス構造から電気絶縁性材料を除去するための方法であって、該方法は、
エッチング液を処理チャンバ内に導入することにより、前記半導体デバイス構造の一部を除去し、副生成物を生成することと、
前記副生成物を沈殿に変換することと、
前記沈殿を除去することにより、前記副生成物を連続的に除去することと、
を含むことを特徴とする、方法。 - 前記副生成物を前記沈殿物に変換することが、前記エッチング液に沈殿促進剤を供給することを含む、請求項10に記載の方法。
- 前記沈殿物を除去することが、前記沈殿物を濾別することを含む、請求項10又は11に記載の方法。
- 前記エッチング液がリン酸含有溶液を含む、請求項10~12のいずれか一項に記載の方法。
- 前記一部が窒化ケイ素を含む、請求項10~13のいずれか一項に記載の方法。
- 前記副生成物がケイ酸を含む、請求項10~13のいずれか一項に記載の方法。
- 前記沈殿促進剤が、フッ化水素、水、アミノ酸、アミン、及び、Ca又はMgを含有する無機塩、からなる群から選ばれる1種以上を含む、請求項10~15のいずれか一項に記載の方法。
- 前記沈殿促進剤が、固体構造を含み、該固体構造上に前記副生成物が沈殿する、請求項10~15のいずれか一項に記載の方法。
- 前記固体構造がケイ酸塩を含む、請求項17に記載の方法。
- 前記副生成物が加熱または冷却される、請求項10~15のいずれか一項に記載の方法。
- 前記副生成物の除去後に、前記エッチング液を循環させて前記処理チャンバに戻すことをさらに含む、請求項10~19のいずれか一項に記載の方法。
- 半導体デバイス構造から電気絶縁性材料を除去するための方法であって、該方法は、
半導体デバイス構造を、前記電気絶縁性材料に対して正のエッチング選択性を示す溶液に曝露することと、
前記溶液が酸化ケイ素に対して負のエッチング選択性を示すやり方で、半導体デバイス構造から前記電気絶縁性材料を化学的に除去することと
を含むことを特徴とする、方法。 - 前記電気絶縁性材料が窒化ケイ素を含む、請求項21に記載の方法。
- 前記窒化ケイ素を副生成物に変換することをさらに含む、請求項22に記載の方法。
- 前記副生成物を沈殿物に変換することをさらに含む、請求項23に記載の方法。
- 前記溶液から前記沈殿物を除去することをさらに含む、請求項24に記載の方法。
- 前記溶液の組成をリアルタイムで監視することをさらに含む、請求項21に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962808046P | 2019-02-20 | 2019-02-20 | |
US62/808,046 | 2019-02-20 | ||
PCT/US2020/019097 WO2020172454A1 (en) | 2019-02-20 | 2020-02-20 | Need for si3n4 selective removal by wet chemistry |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022521267A true JP2022521267A (ja) | 2022-04-06 |
JPWO2020172454A5 JPWO2020172454A5 (ja) | 2022-06-29 |
Family
ID=72144736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021549173A Pending JP2022521267A (ja) | 2019-02-20 | 2020-02-20 | 湿式化学によるSi3N4選択的除去の必要性 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20210384037A1 (ja) |
JP (1) | JP2022521267A (ja) |
KR (1) | KR20210129692A (ja) |
CN (1) | CN113632199A (ja) |
SG (1) | SG11202109069WA (ja) |
WO (1) | WO2020172454A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115148643A (zh) * | 2021-10-27 | 2022-10-04 | 中国科学院上海微系统与信息技术研究所 | 湿法蚀刻设备及湿法蚀刻方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6117351A (en) * | 1998-04-06 | 2000-09-12 | Micron Technology, Inc. | Method for etching dielectric films |
TWI233157B (en) * | 2002-09-17 | 2005-05-21 | M Fsi Ltd | Regeneration process of etching solution, etching process, and etching system |
KR100655429B1 (ko) * | 2005-11-10 | 2006-12-08 | 삼성전자주식회사 | 인산 용액을 재생하는 방법 및 장치, 그리고 인산 용액을사용하여 기판을 처리하는 장치 |
US8298435B2 (en) * | 2007-10-19 | 2012-10-30 | International Business Machines Corporation | Selective etching bath methods |
US10269591B2 (en) * | 2013-10-23 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of selectively removing silicon nitride and single wafer etching apparatus thereof |
CN106029255B (zh) * | 2014-02-21 | 2018-10-26 | 特维斯股份有限公司 | 溶解速率受控材料的制备 |
-
2020
- 2020-02-20 SG SG11202109069WA patent/SG11202109069WA/en unknown
- 2020-02-20 KR KR1020217030020A patent/KR20210129692A/ko not_active Application Discontinuation
- 2020-02-20 WO PCT/US2020/019097 patent/WO2020172454A1/en active Application Filing
- 2020-02-20 JP JP2021549173A patent/JP2022521267A/ja active Pending
- 2020-02-20 CN CN202080015854.0A patent/CN113632199A/zh active Pending
-
2021
- 2021-08-20 US US17/445,560 patent/US20210384037A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
SG11202109069WA (en) | 2021-09-29 |
WO2020172454A1 (en) | 2020-08-27 |
CN113632199A (zh) | 2021-11-09 |
KR20210129692A (ko) | 2021-10-28 |
US20210384037A1 (en) | 2021-12-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI720167B (zh) | 用以處理氮化物結構而不生矽土沉積之製程與設備 | |
TWI661033B (zh) | 蝕刻液、蝕刻方法及電子零件之製造方法 | |
JP3972133B2 (ja) | ウエハ処理液及びその製造方法 | |
JP4642001B2 (ja) | フォトレジスト残渣及びポリマー残渣除去液組成物 | |
US10916440B2 (en) | Process and apparatus for processing a nitride structure without silica deposition | |
US9222018B1 (en) | Titanium nitride hard mask and etch residue removal | |
US10529588B2 (en) | Substrate treatment method and substrate treatment apparatus | |
JP5037442B2 (ja) | 窒化チタン除去液、窒化チタン被膜の除去方法、及び窒化チタン除去液の製造方法 | |
JP3889271B2 (ja) | 半導体装置の製造方法 | |
WO2014091817A1 (ja) | 基板洗浄液および基板洗浄方法 | |
JP6575643B2 (ja) | シリコンウェーハの製造方法 | |
JP2022521267A (ja) | 湿式化学によるSi3N4選択的除去の必要性 | |
US8440092B2 (en) | Method for selective etching | |
US20030116174A1 (en) | Semiconductor wafer cleaning apparatus and cleaning method using the same | |
JPH06349808A (ja) | 窒化シリコン膜除去液およびそれを用いた半導体製造装置 | |
JP2009158531A (ja) | 半導体基板の処理方法及び半導体装置の製造方法 | |
JP2010109064A (ja) | エッチング方法 | |
JP2006108716A (ja) | 半導体装置の製造方法 | |
WO2016042667A1 (ja) | 半導体装置の製造方法 | |
TW202346542A (zh) | 氮化矽蝕刻液組成物 | |
JP6405618B2 (ja) | シリコンウェーハの製造方法 | |
TWI230413B (en) | Treatment method for protecting metal surface of semiconductor structure | |
CN110838436A (zh) | 一种湿制程工艺及应用 | |
JP2013175719A (ja) | キャパシタ形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211015 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20220121 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20220121 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220512 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220520 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220629 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221206 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20231017 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20231222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240116 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240412 |