SG11202109069WA - Need for si3n4 selective removal by wet chemistry - Google Patents
Need for si3n4 selective removal by wet chemistryInfo
- Publication number
- SG11202109069WA SG11202109069WA SG11202109069WA SG11202109069WA SG11202109069WA SG 11202109069W A SG11202109069W A SG 11202109069WA SG 11202109069W A SG11202109069W A SG 11202109069WA SG 11202109069W A SG11202109069W A SG 11202109069WA SG 11202109069W A SG11202109069W A SG 11202109069WA
- Authority
- SG
- Singapore
- Prior art keywords
- si3n4
- need
- selective removal
- wet chemistry
- chemistry
- Prior art date
Links
- 238000007704 wet chemistry method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D21/00—Separation of suspended solid particles from liquids by sedimentation
- B01D21/0012—Settling tanks making use of filters, e.g. by floating layers of particulate material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D21/00—Separation of suspended solid particles from liquids by sedimentation
- B01D21/01—Separation of suspended solid particles from liquids by sedimentation using flocculating agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962808046P | 2019-02-20 | 2019-02-20 | |
PCT/US2020/019097 WO2020172454A1 (en) | 2019-02-20 | 2020-02-20 | Need for si3n4 selective removal by wet chemistry |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202109069WA true SG11202109069WA (en) | 2021-09-29 |
Family
ID=72144736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202109069WA SG11202109069WA (en) | 2019-02-20 | 2020-02-20 | Need for si3n4 selective removal by wet chemistry |
Country Status (6)
Country | Link |
---|---|
US (1) | US20210384037A1 (ja) |
JP (1) | JP2022521267A (ja) |
KR (1) | KR20210129692A (ja) |
CN (1) | CN113632199A (ja) |
SG (1) | SG11202109069WA (ja) |
WO (1) | WO2020172454A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115148643A (zh) * | 2021-10-27 | 2022-10-04 | 中国科学院上海微系统与信息技术研究所 | 湿法蚀刻设备及湿法蚀刻方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3072876B2 (ja) * | 1993-09-17 | 2000-08-07 | 日曹エンジニアリング株式会社 | エッチング液の精製方法 |
US6117351A (en) * | 1998-04-06 | 2000-09-12 | Micron Technology, Inc. | Method for etching dielectric films |
TWI233157B (en) * | 2002-09-17 | 2005-05-21 | M Fsi Ltd | Regeneration process of etching solution, etching process, and etching system |
KR100655429B1 (ko) * | 2005-11-10 | 2006-12-08 | 삼성전자주식회사 | 인산 용액을 재생하는 방법 및 장치, 그리고 인산 용액을사용하여 기판을 처리하는 장치 |
CN101605869B (zh) * | 2006-12-21 | 2014-03-05 | 高级技术材料公司 | 选择性除去四氮化三硅的组合物和方法 |
US8298435B2 (en) * | 2007-10-19 | 2012-10-30 | International Business Machines Corporation | Selective etching bath methods |
US8105851B1 (en) * | 2010-09-23 | 2012-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride film wet stripping |
US10269591B2 (en) * | 2013-10-23 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of selectively removing silicon nitride and single wafer etching apparatus thereof |
WO2015127177A1 (en) * | 2014-02-21 | 2015-08-27 | Terves, Inc. | Manufacture of controlled rate dissolving materials |
US10964559B2 (en) * | 2014-06-30 | 2021-03-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer etching apparatus and method for controlling etch bath of wafer |
JP6940232B2 (ja) * | 2016-09-23 | 2021-09-22 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
US11229856B2 (en) * | 2017-09-29 | 2022-01-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching solution recycling system and method for wafer etching apparatus |
-
2020
- 2020-02-20 SG SG11202109069WA patent/SG11202109069WA/en unknown
- 2020-02-20 JP JP2021549173A patent/JP2022521267A/ja active Pending
- 2020-02-20 WO PCT/US2020/019097 patent/WO2020172454A1/en active Application Filing
- 2020-02-20 CN CN202080015854.0A patent/CN113632199A/zh active Pending
- 2020-02-20 KR KR1020217030020A patent/KR20210129692A/ko not_active Application Discontinuation
-
2021
- 2021-08-20 US US17/445,560 patent/US20210384037A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2020172454A1 (en) | 2020-08-27 |
JP2022521267A (ja) | 2022-04-06 |
CN113632199A (zh) | 2021-11-09 |
KR20210129692A (ko) | 2021-10-28 |
US20210384037A1 (en) | 2021-12-09 |
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