JP2022511822A5 - - Google Patents
Info
- Publication number
- JP2022511822A5 JP2022511822A5 JP2021531555A JP2021531555A JP2022511822A5 JP 2022511822 A5 JP2022511822 A5 JP 2022511822A5 JP 2021531555 A JP2021531555 A JP 2021531555A JP 2021531555 A JP2021531555 A JP 2021531555A JP 2022511822 A5 JP2022511822 A5 JP 2022511822A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- oxygen
- substrate
- containing layer
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862775008P | 2018-12-04 | 2018-12-04 | |
| US62/775,008 | 2018-12-04 | ||
| US201962796899P | 2019-01-25 | 2019-01-25 | |
| US62/796,899 | 2019-01-25 | ||
| PCT/US2019/062833 WO2020117496A1 (en) | 2018-12-04 | 2019-11-22 | Cure methods for cross-linking si-hydroxyl bonds |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022511822A JP2022511822A (ja) | 2022-02-01 |
| JP2022511822A5 true JP2022511822A5 (https=) | 2022-12-02 |
| JP7598859B2 JP7598859B2 (ja) | 2024-12-12 |
Family
ID=70849615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021531555A Active JP7598859B2 (ja) | 2018-12-04 | 2019-11-22 | Si-ヒドロキシル結合を架橋するための硬化方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11090683B2 (https=) |
| JP (1) | JP7598859B2 (https=) |
| KR (1) | KR102787773B1 (https=) |
| CN (1) | CN113169039A (https=) |
| SG (1) | SG11202105182QA (https=) |
| TW (1) | TWI860309B (https=) |
| WO (1) | WO2020117496A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114790543A (zh) * | 2021-01-26 | 2022-07-26 | Asm Ip私人控股有限公司 | 用于沉积层的方法和系统 |
| US20240106070A1 (en) | 2021-07-06 | 2024-03-28 | Lg Energy Solution, Ltd. | Battery Cell And Battery Module Comprising Same |
| US20240363337A1 (en) * | 2023-04-26 | 2024-10-31 | Applied Materials, Inc. | Methods for forming low-k dielectric materials |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4124560A1 (de) * | 1991-07-24 | 1993-01-28 | Wacker Chemie Gmbh | Beschichtungsmittel zur herstellung von wasserdichten, dampfdurchlaessigen und flammverzoegernden beschichtungen |
| US5470800A (en) * | 1992-04-03 | 1995-11-28 | Sony Corporation | Method for forming an interlayer film |
| JP2538740B2 (ja) * | 1992-06-09 | 1996-10-02 | 株式会社半導体プロセス研究所 | 半導体製造装置及び半導体装置の製造方法 |
| JPH08306681A (ja) * | 1995-04-28 | 1996-11-22 | Sony Corp | 平坦化塗布絶縁膜の形成方法 |
| JP3582584B2 (ja) * | 1999-09-14 | 2004-10-27 | 東京エレクトロン株式会社 | 基板処理方法 |
| JP3804913B2 (ja) * | 2000-09-19 | 2006-08-02 | 株式会社日立国際電気 | 半導体装置の製造方法および半導体装置の製造装置 |
| JP3773776B2 (ja) * | 2000-10-11 | 2006-05-10 | 大日本スクリーン製造株式会社 | 基板処理装置 |
| TW200422424A (en) * | 2002-08-18 | 2004-11-01 | Asml Us Inc | Low temperature deposition of silicon oxides and oxynitrides |
| AU2003282988A1 (en) * | 2002-10-21 | 2004-05-13 | Massachusetts Institute Of Technology | Pecvd of organosilicate thin films |
| US7097886B2 (en) * | 2002-12-13 | 2006-08-29 | Applied Materials, Inc. | Deposition process for high aspect ratio trenches |
| US7524735B1 (en) * | 2004-03-25 | 2009-04-28 | Novellus Systems, Inc | Flowable film dielectric gap fill process |
| US7015061B2 (en) * | 2004-08-03 | 2006-03-21 | Honeywell International Inc. | Low temperature curable materials for optical applications |
| JP2006310448A (ja) * | 2005-04-27 | 2006-11-09 | Jsr Corp | トレンチ埋め込み用組成物及びトレンチ埋め込み方法 |
| US7790634B2 (en) * | 2006-05-30 | 2010-09-07 | Applied Materials, Inc | Method for depositing and curing low-k films for gapfill and conformal film applications |
| US9245739B2 (en) * | 2006-11-01 | 2016-01-26 | Lam Research Corporation | Low-K oxide deposition by hydrolysis and condensation |
| KR20090002973A (ko) * | 2007-07-05 | 2009-01-09 | 주식회사 아이피에스 | 절연막 형성방법, 이 방법으로 형성된 절연막 및 이 방법을이용한 반도체 소자의 갭-필 방법 |
| US7803722B2 (en) * | 2007-10-22 | 2010-09-28 | Applied Materials, Inc | Methods for forming a dielectric layer within trenches |
| US7943531B2 (en) * | 2007-10-22 | 2011-05-17 | Applied Materials, Inc. | Methods for forming a silicon oxide layer over a substrate |
| JP5449189B2 (ja) * | 2007-12-19 | 2014-03-19 | ラム リサーチ コーポレーション | low−k誘電体の気相修復及び細孔シーリング |
| US8557712B1 (en) * | 2008-12-15 | 2013-10-15 | Novellus Systems, Inc. | PECVD flowable dielectric gap fill |
| JP5336872B2 (ja) * | 2009-02-06 | 2013-11-06 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
| US20100273382A1 (en) * | 2009-04-28 | 2010-10-28 | Malay Nandi | Acoustic and fire retardant foam coating composition for fibrous mat |
| US20120149213A1 (en) * | 2010-12-09 | 2012-06-14 | Lakshminarayana Nittala | Bottom up fill in high aspect ratio trenches |
| TW201403711A (zh) * | 2012-07-02 | 2014-01-16 | 應用材料股份有限公司 | 利用氣相化學暴露之低k介電質損傷修復 |
| JP6155063B2 (ja) * | 2013-03-19 | 2017-06-28 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置及びプログラム |
| WO2015116350A1 (en) * | 2014-01-29 | 2015-08-06 | Applied Materials, Inc. | Low temperature cure modulus enhancement |
| US9362107B2 (en) * | 2014-09-30 | 2016-06-07 | Applied Materials, Inc. | Flowable low-k dielectric gapfill treatment |
| US10388546B2 (en) * | 2015-11-16 | 2019-08-20 | Lam Research Corporation | Apparatus for UV flowable dielectric |
| US10395919B2 (en) * | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
-
2019
- 2019-11-22 WO PCT/US2019/062833 patent/WO2020117496A1/en not_active Ceased
- 2019-11-22 JP JP2021531555A patent/JP7598859B2/ja active Active
- 2019-11-22 CN CN201980079269.4A patent/CN113169039A/zh active Pending
- 2019-11-22 KR KR1020217020630A patent/KR102787773B1/ko active Active
- 2019-11-22 SG SG11202105182QA patent/SG11202105182QA/en unknown
- 2019-11-22 US US16/692,841 patent/US11090683B2/en active Active
- 2019-12-04 TW TW108144229A patent/TWI860309B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109072426B (zh) | 组合物和使用其沉积含硅膜的方法 | |
| TWI660961B (zh) | 製造用於填充表面特徵的低k膜的前驅物及流動cvd方法 | |
| JP6688588B2 (ja) | 流動性膜の硬化浸透深度の改善及び応力調整 | |
| US7955650B2 (en) | Method for forming dielectric film using porogen gas | |
| TWI762809B (zh) | 具有高碳含量的含矽膜的製造方法 | |
| CN107406983B (zh) | 通过沉积调整来解决fcvd的线条弯曲 | |
| US8921235B2 (en) | Controlled air gap formation | |
| JP2022511822A5 (https=) | ||
| KR20000068308A (ko) | 반도체기판상에평탄한유전체층을침전시키는장치및방법 | |
| US20150196933A1 (en) | Carbon dioxide and carbon monoxide mediated curing of low k films to increase hardness and modulus | |
| KR20160059971A (ko) | 유전체 막들의 라디칼 보조 경화 | |
| US20180148833A1 (en) | Methods for depositing flowable silicon containing films using hot wire chemical vapor deposition | |
| CN118339636A (zh) | 高压缩应力热稳定氮化物膜的沉积 | |
| CN116137931A (zh) | 减少半导体设备中的层内电容 | |
| TW202223133A (zh) | 含矽膜中的雜質減量 | |
| TWI860309B (zh) | 交聯矽-羥基鍵之固化方法 | |
| JP2016204685A5 (https=) | ||
| CN120202321A (zh) | 图案化应用的抑制式原子层沉积 | |
| WO2024243318A1 (en) | Cyclic etching and deposition to control film profile | |
| WO2025049340A1 (en) | Deposition with modification step for sputtering and/or composition modification | |
| CN119213529A (zh) | 无接缝且无裂纹沉积 |