KR102787773B1 - Si-하이드록실 결합들을 가교시키기 위한 경화 방법들 - Google Patents

Si-하이드록실 결합들을 가교시키기 위한 경화 방법들 Download PDF

Info

Publication number
KR102787773B1
KR102787773B1 KR1020217020630A KR20217020630A KR102787773B1 KR 102787773 B1 KR102787773 B1 KR 102787773B1 KR 1020217020630 A KR1020217020630 A KR 1020217020630A KR 20217020630 A KR20217020630 A KR 20217020630A KR 102787773 B1 KR102787773 B1 KR 102787773B1
Authority
KR
South Korea
Prior art keywords
silicon
oxygen
containing layer
substrate
ammonia
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217020630A
Other languages
English (en)
Korean (ko)
Other versions
KR20210088729A (ko
Inventor
마틴 제이 시몬스
병국 안
징메이 리앙
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20210088729A publication Critical patent/KR20210088729A/ko
Application granted granted Critical
Publication of KR102787773B1 publication Critical patent/KR102787773B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • H01L21/02123—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/061—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
    • B05D3/065—After-treatment
    • B05D3/067—Curing or cross-linking the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H01L21/02208—
    • H01L21/02271—
    • H01L21/0231—
    • H01L21/31105—
    • H01L21/324—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6509—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to electromagnetic radiation, e.g. UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electromagnetism (AREA)
KR1020217020630A 2018-12-04 2019-11-22 Si-하이드록실 결합들을 가교시키기 위한 경화 방법들 Active KR102787773B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862775008P 2018-12-04 2018-12-04
US62/775,008 2018-12-04
US201962796899P 2019-01-25 2019-01-25
US62/796,899 2019-01-25
PCT/US2019/062833 WO2020117496A1 (en) 2018-12-04 2019-11-22 Cure methods for cross-linking si-hydroxyl bonds

Publications (2)

Publication Number Publication Date
KR20210088729A KR20210088729A (ko) 2021-07-14
KR102787773B1 true KR102787773B1 (ko) 2025-03-26

Family

ID=70849615

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217020630A Active KR102787773B1 (ko) 2018-12-04 2019-11-22 Si-하이드록실 결합들을 가교시키기 위한 경화 방법들

Country Status (7)

Country Link
US (1) US11090683B2 (https=)
JP (1) JP7598859B2 (https=)
KR (1) KR102787773B1 (https=)
CN (1) CN113169039A (https=)
SG (1) SG11202105182QA (https=)
TW (1) TWI860309B (https=)
WO (1) WO2020117496A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114790543A (zh) * 2021-01-26 2022-07-26 Asm Ip私人控股有限公司 用于沉积层的方法和系统
US20240106070A1 (en) 2021-07-06 2024-03-28 Lg Energy Solution, Ltd. Battery Cell And Battery Module Comprising Same
US20240363337A1 (en) * 2023-04-26 2024-10-31 Applied Materials, Inc. Methods for forming low-k dielectric materials

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156061A (ja) * 1999-09-14 2001-06-08 Tokyo Electron Ltd 基板処理方法及び基板処理装置
JP2002093790A (ja) * 2000-09-19 2002-03-29 Hitachi Kokusai Electric Inc 半導体装置の製造方法および半導体装置の製造装置
JP2006310448A (ja) * 2005-04-27 2006-11-09 Jsr Corp トレンチ埋め込み用組成物及びトレンチ埋め込み方法
JP2009539265A (ja) * 2006-05-30 2009-11-12 アプライド マテリアルズ インコーポレイテッド ギャップ充填と共形のフィルムの適用のために低ｋ膜を堆積させ硬化する方法
JP2010182963A (ja) * 2009-02-06 2010-08-19 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2014183218A (ja) * 2013-03-19 2014-09-29 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理装置及びプログラム
US20150004806A1 (en) * 2006-11-01 2015-01-01 Lam Research Corporation Low-k oxide deposition by hydrolysis and condensation

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4124560A1 (de) * 1991-07-24 1993-01-28 Wacker Chemie Gmbh Beschichtungsmittel zur herstellung von wasserdichten, dampfdurchlaessigen und flammverzoegernden beschichtungen
US5470800A (en) * 1992-04-03 1995-11-28 Sony Corporation Method for forming an interlayer film
JP2538740B2 (ja) * 1992-06-09 1996-10-02 株式会社半導体プロセス研究所 半導体製造装置及び半導体装置の製造方法
JPH08306681A (ja) * 1995-04-28 1996-11-22 Sony Corp 平坦化塗布絶縁膜の形成方法
JP3773776B2 (ja) * 2000-10-11 2006-05-10 大日本スクリーン製造株式会社 基板処理装置
TW200422424A (en) * 2002-08-18 2004-11-01 Asml Us Inc Low temperature deposition of silicon oxides and oxynitrides
AU2003282988A1 (en) * 2002-10-21 2004-05-13 Massachusetts Institute Of Technology Pecvd of organosilicate thin films
US7097886B2 (en) * 2002-12-13 2006-08-29 Applied Materials, Inc. Deposition process for high aspect ratio trenches
US7524735B1 (en) * 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
US7015061B2 (en) * 2004-08-03 2006-03-21 Honeywell International Inc. Low temperature curable materials for optical applications
KR20090002973A (ko) * 2007-07-05 2009-01-09 주식회사 아이피에스 절연막 형성방법, 이 방법으로 형성된 절연막 및 이 방법을이용한 반도체 소자의 갭-필 방법
US7803722B2 (en) * 2007-10-22 2010-09-28 Applied Materials, Inc Methods for forming a dielectric layer within trenches
US7943531B2 (en) * 2007-10-22 2011-05-17 Applied Materials, Inc. Methods for forming a silicon oxide layer over a substrate
JP5449189B2 (ja) * 2007-12-19 2014-03-19 ラム リサーチ コーポレーション ｌｏｗ−ｋ誘電体の気相修復及び細孔シーリング
US8557712B1 (en) * 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
US20100273382A1 (en) * 2009-04-28 2010-10-28 Malay Nandi Acoustic and fire retardant foam coating composition for fibrous mat
US20120149213A1 (en) * 2010-12-09 2012-06-14 Lakshminarayana Nittala Bottom up fill in high aspect ratio trenches
TW201403711A (zh) * 2012-07-02 2014-01-16 應用材料股份有限公司 利用氣相化學暴露之低ｋ介電質損傷修復
WO2015116350A1 (en) * 2014-01-29 2015-08-06 Applied Materials, Inc. Low temperature cure modulus enhancement
US9362107B2 (en) * 2014-09-30 2016-06-07 Applied Materials, Inc. Flowable low-k dielectric gapfill treatment
US10388546B2 (en) * 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
US10395919B2 (en) * 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156061A (ja) * 1999-09-14 2001-06-08 Tokyo Electron Ltd 基板処理方法及び基板処理装置
JP2002093790A (ja) * 2000-09-19 2002-03-29 Hitachi Kokusai Electric Inc 半導体装置の製造方法および半導体装置の製造装置
JP2006310448A (ja) * 2005-04-27 2006-11-09 Jsr Corp トレンチ埋め込み用組成物及びトレンチ埋め込み方法
JP2009539265A (ja) * 2006-05-30 2009-11-12 アプライド マテリアルズ インコーポレイテッド ギャップ充填と共形のフィルムの適用のために低ｋ膜を堆積させ硬化する方法
US20150004806A1 (en) * 2006-11-01 2015-01-01 Lam Research Corporation Low-k oxide deposition by hydrolysis and condensation
JP2010182963A (ja) * 2009-02-06 2010-08-19 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2014183218A (ja) * 2013-03-19 2014-09-29 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理装置及びプログラム

Also Published As

Publication number Publication date
TW202028516A (zh) 2020-08-01
KR20210088729A (ko) 2021-07-14
JP2022511822A (ja) 2022-02-01
US11090683B2 (en) 2021-08-17
US20200171536A1 (en) 2020-06-04
SG11202105182QA (en) 2021-06-29
JP7598859B2 (ja) 2024-12-12
CN113169039A (zh) 2021-07-23
WO2020117496A1 (en) 2020-06-11
TWI860309B (zh) 2024-11-01

Similar Documents

Publication Publication Date Title
KR101758944B1 (ko) 신규한 갭 충진 집적화
US9299559B2 (en) Flowable oxide film with tunable wet etch rate
CN102569165B (zh) 高纵横比沟槽中的颠倒填充
KR101161074B1 (ko) 기판상에 실리콘 옥사이드 층을 형성시키는 방법
US20150118863A1 (en) Methods and apparatus for forming flowable dielectric films having low porosity
US20190214228A1 (en) Radical assisted cure of dielectric films
KR102456510B1 (ko) 증착 조절에 의한 fcvd 라인 벤딩 해소
JP2018503259A (ja) 高品質ｆｃｖｄ膜バックグラウンド用の先進的処理フロー
KR20150053967A (ko) 저비용의 유동 가능한 유전체 필름들
KR102787773B1 (ko) Si-하이드록실 결합들을 가교시키기 위한 경화 방법들
US20150167160A1 (en) Enabling radical-based deposition of dielectric films
CN118339636A (zh) 高压缩应力热稳定氮化物膜的沉积
CN116137931A (zh) 减少半导体设备中的层内电容
JP7833911B2 (ja) 絶縁膜の形成方法および基板処理システム
US20240321571A1 (en) Insulating film forming method and substrate processing system
KR102956990B1 (ko) 절연막의 형성 방법 및 기판 처리 시스템
KR20260057596A (ko) 절연막의 형성 방법 및 기판 처리 시스템
KR20250159717A (ko) 실리콘-함유 재료들의 품질을 개선하기 위한 방법들

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000