JP2022180523A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2022180523A JP2022180523A JP2022150183A JP2022150183A JP2022180523A JP 2022180523 A JP2022180523 A JP 2022180523A JP 2022150183 A JP2022150183 A JP 2022150183A JP 2022150183 A JP2022150183 A JP 2022150183A JP 2022180523 A JP2022180523 A JP 2022180523A
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- electrode
- semiconductor device
- main surface
- substrate
- layer
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Abstract
Description
図1~図14を用いて、本開示の第1実施形態について説明する。
図15~図18を用いて、本開示の第1実施形態の第1変形例について説明する。
図19~図21を用いて、本開示の第1実施形態の第2変形例について説明する。
[付記A1]
互いに反対側を向く主面および裏面を含む基板と、
第1主面導電部および第2主面導電部を含み、前記基板の前記主面に形成された主面導電層と、
前記基板の前記裏面に形成された裏面導電層と、
前記基板の厚さ方向視において前記第1主面導電部および前記裏面導電層に重なり且つ前記基板を貫通する第1導電部分と、
前記主面導電層に配置された光学素子と、
前記厚さ方向視において前記光学素子を囲む内側面を含み、前記基板に配置されたリフレクタと、を備え、
前記第1主面導電部には、前記光学素子が配置され、前記第2主面導電部は、前記厚さ方向視において前記第1主面導電部と前記リフレクタの前記内側面との間に位置し、
前記第2主面導電部は、前記厚さ方向視において、前記リフレクタの内側面から離間している、光学装置。
[付記A2]
前記光学素子および前記主面導電層に接しており、且つ、前記光学素子および前記主面導電層の間に介在している接合層を更に備える、付記A1に記載の光学装置。
[付記A3]
前記主面導電層は全領域にわたって、前記厚さ方向視において、前記内側面の内側に位置している、付記A1または付記A2に記載の光学装置。
[付記A4]
前記第1導電部分は、前記厚さ方向視において、前記内側面の内側に位置している、付記A1ないし付記A3のいずれかに記載の光学装置。
[付記A5]
前記第2主面導電部と前記内側面との離間距離は、前記第2主面導電部と前記第1主面導電部との離間距離よりも、小さい、付記A1ないし付記A4のいずれかに記載の光学装置。
[付記A6]
前記主面導電層は、前記第1主面導電部と前記第2主面導電部とにつながる第3主面導電部を含み、前記第3主面導電部は、前記厚さ方向視において、前記第1主面導電部と前記第2主面導電部の間に位置している、付記A1ないし付記A5のいずれかに記載の光学装置。
[付記A7]
前記第3主面導電部は、前記第1主面導電部から第1方向に沿って延びており、
前記第1方向および前記厚さ方向に直交する第2方向における、前記第3主面導電部の寸法は、前記第2方向における前記第1主面導電部の寸法よりも、小さい、付記A6に記載の光学装置。
[付記A8]
前記第2方向における、前記第3主面導電部の寸法は、前記第2方向における前記第2主面導電部の寸法よりも、小さい、付記A7に記載の光学装置。
[付記A9]
前記光学素子および前記主面導電層にボンディングされたワイヤを更に備え、
前記主面導電層は、前記ワイヤがボンディングされた第4主面導電部を含み、
前記第4主面導電部は、前記厚さ方向視において、前記リフレクタの前記内側面から離間している、付記A6ないし付記A8のいずれかに記載の光学装置。
[付記A10]
前記基板の厚さ方向視において前記第4主面導電部および前記裏面導電層に重なり且つ前記基板を貫通する第2導電部分を更に備え、
前記第2導電部分は、前記厚さ方向視において、前記内側面の内側に位置している、付記A9に記載の光学装置。
[付記A11]
前記裏面導電層は、第1裏面導電部および第2裏面導電部を含み、
前記第1裏面導電部は、前記厚さ方向視において前記第1導電部分と前記リフレクタとに重なっており、
前記第2裏面導電部は、前記厚さ方向視において前記第2導電部分と前記リフレクタとに重なっている、付記A10に記載の光学装置。
[付記A12]
前記基板は、互いに反対側を向く2つの側面を有し、
前記裏面導電層は、前記厚さ方向視において、前記基板の前記裏面と前記2つの側面の一方との境界から、前記基板の前記裏面と前記2つの側面の他方との境界に至っている、付記A1に記載の光学装置。
[付記A13]
前記リフレクタおよび前記基板は、互いに同一の材料を含む、付記A1ないし付記A12のいずれかに記載の光学装置。
[付記A14]
前記リフレクタは、光の透過を遮断する材料よりなる、付記A11ないし付記A13のいずれかに記載の光学装置。
[付記A15]
前記基板に配置された光透過樹脂部を更に備え、
前記光透過樹脂部は、互いに反対側を向く2つの光透過外面を有し、
前記リフレクタは、互いに反対側を向く2つのリフレクタ外側面を有し、
前記2つの光透過外面および前記2つのリフレクタ外側面はいずれも、前記基板の厚さ方向に直交しており、
前記2つの光透過外面は、前記2つのリフレクタ外側面と、それぞれ面一である、付記A1ないし付記A14のいずれかに記載の光学装置。
[付記A16]
前記光透過樹脂部は、前記基板から前記光学素子に向かう方向に膨らむ曲面を有する、付記A15に記載の光学装置。
11 主面
13 裏面
15A 第1側面
15B 第2側面
15C 第3側面
15D 第4側面
161A 縁
161B 縁
16A 第1凹部
16B 第2凹部
31 主面導電層
311A 第1主面導電部
312A 第2主面導電部
313A 第3主面導電部
31B 第4主面導電部
34A 第1導電部分
34B 第2導電部分
35A 第1端縁部
35B 第2端縁部
37A 第1導電部分
37B 第2導電部分
38 裏面導電層
381AA 部位
381BB 部位
382AA 部位
382BB 部位
383AA 部位
383BB 部位
38A 第1裏面導電部
38B 第2裏面導電部
41 光学素子
42 ワイヤ
5 接合層
7 光透過樹脂部
700 光透過樹脂部
71 第1光透過部位
711A 光透過外面
711B 光透過外面
711C 光透過外面
711D 光透過外面
72 第2光透過部位
721 曲面
8 リフレクタ
800 リフレクタ
811 リフレクタ表面
812 リフレクタ裏面
81A 第1リフレクタ外側面
81B 第2リフレクタ外側面
81C 第3リフレクタ外側面
81D 第4リフレクタ外側面
83 内側面
83A 第1部位
83B 第2部位
83C 第3部位
83D 第4部位
89 接合層
A1 光学装置
A2 光学装置
A3 光学装置
L11 寸法
L12 寸法
L13 寸法
LA 距離
LB 距離
LC 距離
X1 第1方向
Y1 第2方向
Z1 厚さ方向
図22~図29に基づき、本開示の第2実施形態にかかる半導体装置A10について説明する。半導体装置A10は、基板1、主面電極21、裏面電極22、中間電極23、配線29、半導体素子31、ワイヤ4、被覆材51および封止樹脂52を備える。なお、図22および図23は、理解の便宜上、封止樹脂52を透過して示している。これらの図において、透過した封止樹脂52の外形を想像線(二点鎖線)で示している。
図41~図45に基づき、本開示の第3実施形態にかかる半導体装置A20について説明する。これらの図において、先述した半導体装置A10と同一または類似の要素には同一の符号を付して、重複する説明を省略する。なお、図41は、理解の便宜上、封止樹脂52を透過して示しており、透過した封止樹脂52の外形を想像線で示している。
[付記B1]
厚さ方向において互いに反対側を向く主面および裏面と、前記主面および前記裏面の双方に交差する側面と、を有する基板であって、前記側面から凹み、かつ前記主面および前記裏面に到達した内側面を有する凹部が形成された基板と、
前記主面に配置された主面電極と、
前記裏面に配置された裏面電極と、
前記内側面に配置され、かつ前記主面電極と前記裏面電極とを導通させる中間電極と、
前記主面電極に搭載された半導体素子と、を備え、
前記主面電極の周縁は、前記主面と前記側面との境界よりも前記主面の内方に位置し、
前記裏面電極の周縁は、前記裏面と前記側面との境界よりも前記裏面の内方に位置する、半導体装置。
[付記B2]
前記中間電極の周縁は、前記内側面と前記側面との境界よりも前記内側面の内方に位置する、付記B1に記載の半導体装置。
[付記B3]
前記内側面は、前記側面から凹む第1領域と、前記第1領域から凹む第2領域と、を有し、
前記中間電極は、前記第2領域に配置されている、付記B2に記載の半導体装置。
[付記B4]
前記第1領域および前記第2領域は、ともに曲面である、付記B3に記載の半導体装置。
[付記B5]
前記主面と前記第1領域との境界の一部に、前記主面電極の周縁の一部が位置し、
前記裏面と前記第1領域との境界の一部に、前記裏面電極の周縁の一部が位置する、付記B3または4に記載の半導体装置。
[付記B6]
前記側面は、前記厚さ方向に対して直交する一方向において互いに離間した一対の領域を有し、
前記凹部は、各々の当該領域から凹むように形成されている、付記B1ないし5のいずれかに記載の半導体装置。
[付記B7]
前記主面電極は、前記半導体素子が搭載される第1主面電極と、前記一方向において前記第1主面電極と離間する第2主面電極と、を含み、
前記半導体素子と前記第2主面電極とを導通させるワイヤをさらに備える、付記B6に記載の半導体装置。
[付記B8]
前記半導体素子は、前記主面と同方向を向く素子主面と、前記素子主面とは反対側を向く素子裏面と、を有し、
前記素子裏面は、導電性を有する接合層を介して前記第1主面電極に導通する第1電極の一部であり、
前記素子主面には、前記ワイヤが接続される第2電極が形成されている、付記B7に記載の半導体装置。
[付記B9]
前記主面電極は、前記一方向において互いに離間する第1主面電極および第2主面電極を含み、
前記半導体素子は、前記第1主面電極および前記第2主面電極の双方に搭載されている、付記B6に記載の半導体装置。
[付記B10]
前記半導体素子は、前記主面に対向する素子裏面を有し、
前記素子裏面には、導電性を有する接合層を介して前記第1主面電極に導通する第1電極と、前記接合層を介して前記第2主面電極に導通する第2電極と、が形成されている、付記B9に記載の半導体装置。
[付記B11]
前記主面電極と、前記裏面電極と、前記中間電極と、は、いずれも前記基板に接するCu層を構成要素として含む、付記B1ないし10のいずれかに記載の半導体装置。
[付記B12]
前記半導体素子は、発光ダイオードであり、
透光性を有し、かつ前記半導体素子を覆う封止樹脂をさらに備える、付記B1ないし11のいずれかに記載の半導体装置。
[付記B13]
前記封止樹脂には、蛍光体が含有されている、付記B12に記載の半導体装置。
[付記B14]
前記主面に配置され、かつ前記基板の厚さ方向視において前記凹部の少なくとも一部に重なる被覆材をさらに備える、付記B12または13に記載の半導体装置。
[付記B15]
厚さ方向において互いに反対側を向く主面および裏面を有する基材に、前記厚さ方向に貫通する孔を形成することと、
前記主面と、前記裏面と、前記孔の内周面と、に導電性を有する下地層を形成することと、
前記下地層の一部を除去することと、を備え、
前記下地層の一部を除去することは、前記主面および前記裏面に形成された前記下地層の周縁が、前記基材の厚さ方向視において前記孔の中心を通る線に対して離間するように、前記下地層の一部を除去することを含む、半導体装置の製造方法。
[付記B16]
前記下地層の一部を除去することは、前記基材の厚さ方向視において前記孔の中心を通る線が延びる方向の両側に、前記孔につながる一対の補助孔を前記基材に形成することを含む、付記B15に記載の半導体装置の製造方法。
[付記B17]
前記下地層を形成することは、無電解めっきにより前記孔の内周面に前記下地層を形成することを含む、付記B15または16に記載の半導体装置の製造方法。
1:基板
11:主面
12:裏面
13:側面
131:第1領域
132:第2領域
14:凹部
141:内側面
141a:第1領域
141b:第2領域
21:主面電極
211:第1主面電極
211a:基部
211b:搭載部
211c:連結部
212:第2主面電極
212a:基部
212b:端子部
213:第1主面電極
213a:基部
213b:搭載部
213c:連結部
214:第2主面電極
214a:基部
214b:搭載部
214c:連結部
22:裏面電極
221:第1裏面電極
222:第2裏面電極
23:中間電極
231:第1中間電極
232:第2中間電極
29:配線
201:Cu層
201a:第1層
201b:第2層
202:めっき層
31:半導体素子
31a:素子主面
31b:素子裏面
31c:p型半導体層
31d:n型半導体層
31e:活性層
311:第1電極
312:第2電極
32:接合層
4:ワイヤ
51:被覆材
52:封止樹脂
521:外縁
61:配線基板
62:導電接合層
81:基材
811:主面
812:裏面
813:孔
813a:内周面
814:補助孔
814a:内周面
82:導電層
82a:配線
821:Cu箔層
822:下地層
822a:切欠部
823:めっき層
83:半導体素子
84:ワイヤ
851:被覆材
852:封止樹脂
L:線
CL:切断線
z:厚さ方向
x:第1方向
y:第2方向
Claims (20)
- 主面と、裏面と、前記主面および前記裏面をつなぐ側面と、を有する基板であって、平面視において前記側面から凹み、かつ前記主面から前記裏面まで延びる内側面を有する凹部が形成された基板と、
前記主面に配置された主面電極と、
前記裏面に配置された裏面電極と、
前記凹部の前記内側面に配置され、かつ前記主面電極と前記裏面電極とを導通させる中間電極と、
前記主面電極に搭載された半導体素子と、を備え、
平面視において、前記主面電極は、前記主面と前記側面との境界よりも前記主面の内方に位置する周縁を有しており、
前記裏面電極は、前記裏面と前記側面との境界よりも前記裏面の内方に位置する周縁を有している、半導体装置。 - 平面視において、前記中間電極は、前記凹部の前記内側面と前記基板の前記側面との境界よりも前記凹部の内方に位置する周縁を有している、請求項1に記載の半導体装置。
- 前記凹部の前記内側面は、前記基板の前記側面から凹む第1領域と、前記第1領域から凹む第2領域と、を有し、
前記中間電極は、前記第2領域に配置されている、請求項1または2に記載の半導体装置。 - 前記第1領域は、前記中間電極から露出している、請求項3に記載の半導体装置。
- 前記第1領域および前記第2領域は、各々、曲面である、請求項3または4に記載の半導体装置。
- 平面視において、前記第2領域の曲率半径は、前記第1領域の曲率半径よりも大である、請求項5に記載の半導体装置。
- 平面視において、前記主面と前記第1領域との境界の一部に、前記主面電極の前記周縁の一部が重なり、
平面視において、前記裏面と前記第1領域との境界の一部に、前記裏面電極の前記周縁の一部が重なる、請求項3ないし6のいずれかに記載の半導体装置。 - 平面視において、前記基板の前記側面は、互いに離間した一対の領域を有し、
前記凹部は、前記一対の領域の各々から凹んでいる、請求項1ないし7のいずれかに記載の半導体装置。 - ワイヤをさらに備えており、
前記主面電極は、前記半導体素子が搭載された第1主面電極と、前記第1主面電極から離間した第2主面電極と、を含み、
前記ワイヤは、前記半導体素子と前記第2主面電極とを互いに導通させる、請求項1に記載の半導体装置。 - 導電性の接合層をさらに備えており、
前記半導体素子は、素子主面と、前記素子主面とは反対側の素子裏面と、を有し、
前記素子裏面は、前記接合層を介して前記第1主面電極に導通しており、
前記素子主面には、前記ワイヤが接続される電極が形成されている、請求項9に記載の半導体装置。 - 前記主面電極、前記裏面電極および前記中間電極は、各々、前記基板に接するCu層を含んでいる、請求項1ないし10のいずれかに記載の半導体装置。
- 透光性の封止樹脂をさらに備えており、
前記半導体素子は、発光ダイオードであり、前記封止樹脂は、前記発光ダイオードを覆っている、請求項1ないし11のいずれかに記載の半導体装置。 - 前記封止樹脂は、蛍光体を含有している、請求項12に記載の半導体装置。
- 前記基板の前記主面に配置された被覆材をさらに備えており、
平面視において、前記被覆材は、前記凹部の少なくとも一部に重なっている、請求項12または13のいずれかに記載の半導体装置。 - 前記被覆材は、平面視において長状の矩形であり、かつ前記基板の前記側面に面一状の端面を有している、請求項14に記載の半導体装置。
- 前記半導体素子は、前記被覆材から露出している、請求項14に記載の半導体装置。
- 前記被覆材の厚さは、前記基板の厚さよりも小さい、請求項14に記載の半導体装置。
- 前記封止樹脂の一部は、前記被覆材の上面に接している、請求項14ないし17のいずれかに記載の半導体装置。
- 前記封止樹脂は、シリコーン樹脂またはエポキシ樹脂のいずれか一方からなり、
前記被覆材は、ソルダーレジストからなる、請求項18に記載の半導体装置。 - 平面視において、前記封止樹脂は、前記基板の前記側面から前記半導体素子側に離間した直線状の外縁を有している、請求項18に記載の半導体装置。
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