JP2022153599A - 光センサおよびそれを用いた分析装置 - Google Patents
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Abstract
Description
(数2) Γ=P1/(P1+P2)
この様に、本実施例の光センサを用いた分析装置を使用すれば、有機溶剤もしくは塩基性もしくは酸性の洗浄液中の低濃度の油の濃度を長期に渡り測定することが可能になる。
次に、図5(D)に示すように、保護層114がコア層112の近傍にのみ残る様にレジスト120を形成する。
次に、図5(E)に示すように、レジスト120を用いた保護層114のエッチングを行い、最後に図5(F)に示すように、レジスト120を除去すれば本実施例の光センサが完成する。
まず、Si基板310上にSiO2層312およびSOIコア層326を形成する(図13(A))。
次に、SiO2層312およびSOIコア層326をエッチングによりパターニングして、図11(A)および図11(B)に示した様な光導波路を形成する(図13(B))。
次にSi基板310上にシリコンバンプ400を形成する(図13(C))。
最後に、シリコンバンプ400上に、光源402、受光器406およびレンズ404を設置する事により、光導波路で構成された光センサに光源402および受光器406を実装する事ができる。
図14は、SOI基板上に形成したSi(SOI)をコアとする光導波路に化合物半導体で形成した半導体レーザを集積した構成を示す。図14の中央に(G)上面図を示し、上面図中に一点鎖線の各切断線で示した位置での垂直断面図を図中の上下に示している。なお、(G)上面図において、上側InPクラッド層322上に形成した電極324は図示を省略してある。
112 コア層
114 保護材
116 Si基板
118、120 レジスト
121 伝搬していく光の強度分布
122 エバネッセント光
123 洗浄液
124 レンズ、プリズム
132 洗浄液中の油への光吸収が発生する領域
134 光吸収が発生しない領域
141 光センサ
142 光源装置
143 受光装置
144 制御装置
146 光ファイバ
147 電気配線
150 洗浄槽
210 コア層
211 光導波路のコア層の破線で囲んだ部分
212 コア層の曲線部
214、218 テーパ形状のコア層
216 コア層の直線部
220 スロット導波路
310 Si基板
312 SiO2層
314 Si層
316 接着層
318、322 InP層
320 MQW/SCH層
324 電極
326 SOIコア層
340 空気
400 シリコンバンプ
402 光源
404 レンズ
406 受光器
Claims (9)
- 基板と、前記基板上に形性されたコア層と、を有する光導波路と、
前記光導波路の片端から光を入射する発光素子と、
前記光導波路のもう一方の他端から出射する透過光を受光する受光素子とを有し、
前記コア層は渦巻き状の形状であり、
前記コア層の前記基板と反対側は、クラッド層の除去もしくは薄い領域を備え、
前記発光素子から発した光強度と前記受光素子で受光した光強度の比より前記光導波路における光透過率を計測することを特徴とする分析装置。 - 基板と、前記基板上に形性されたコア層と、を有する光導波路と、
前記光導波路の片端から光を入射する発光素子と、
前記光導波路のもう一方の他端から出射する透過光を受光する受光素子とを有し、
前記コア層は、進行方向が異なる複数の直線部を含み、
前記コア層の前記基板と反対側は、クラッド層の除去もしくは薄い領域を備え、
前記発光素子から発した光強度と前記受光素子で受光した光強度の比より前記光導波路における光透過率を計測することを特徴とする分析装置。 - 基板と、前記基板上に形性されたコア層と、を有する光導波路と、
前記光導波路の片端から光を入射する発光素子と、
前記光導波路のもう一方の他端から出射する透過光を受光する受光素子とを有し、
前記コア層は、複数の曲線部を含み、
前記コア層の前記基板と反対側は、クラッド層の除去もしくは薄い領域を備え、
前記発光素子から発した光強度と前記受光素子で受光した光強度の比より前記光導波路における光透過率を計測することを特徴とする分析装置。 - 前記コア層に対して前記基板と反対側のクラッド層を除去もしくは薄くしている領域において、
光導波路のコア層が有機溶剤もしくは塩基もしくは酸に対する耐性がクラッド層より高い材質であることを特徴とする、請求項1乃至2に記載の分析装置。 - 前記光導波路のコア層の幅が曲線部より直線部が狭いことを特徴とする請求項1乃至3に記載の分析装置。
- 前記光導波路の直線部の少なくとも一部がスロット導波路型であることを特徴とする請求項1乃至3に記載の分析装置。
- 前記発光素子として光導波路に半導体レーザが集積されており、
前記半導体レーザは光導波路基板上に貼り付けられた化合物半導体より形成され、
前記半導体レーザはリッジ型であり、前記半導体レーザを構成する化合物半導体層の実効的屈折率を光の伝搬方向に徐々に減少させることにより伝搬光の分布を半導体レーザから光導波路に移動させることを特徴とする請求項1乃至3に記載の分析装置。 - 前記半導体レーザを構成する化合物半導体層の少なくとも一層が、半導体層の積層方向に垂直な面内で、光の伝搬方向に向かって複数の頂点を持つテーパ形状を有することを特徴とする請求項7に記載の分析装置。
- 前記半導体層の積層方向に垂直な面内で、光の伝搬方向に向かって複数の頂点を持つテーパ形状を有する前記半導体レーザを構成する化合物半導体層の少なくとも一層が、前記半導体レーザの光導波路基板側クラッド層であることを特徴とする請求項7に記載の分析装置。
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JPH05322747A (ja) * | 1992-03-16 | 1993-12-07 | Nippon Telegr & Teleph Corp <Ntt> | 全反射吸収測定装置 |
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