JP2022119452A - 処理装置 - Google Patents
処理装置 Download PDFInfo
- Publication number
- JP2022119452A JP2022119452A JP2021016577A JP2021016577A JP2022119452A JP 2022119452 A JP2022119452 A JP 2022119452A JP 2021016577 A JP2021016577 A JP 2021016577A JP 2021016577 A JP2021016577 A JP 2021016577A JP 2022119452 A JP2022119452 A JP 2022119452A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- film
- chamber
- forming material
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012545 processing Methods 0.000 title claims abstract description 68
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims description 71
- 238000001816 cooling Methods 0.000 claims description 50
- 230000007246 mechanism Effects 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 25
- 150000002500 ions Chemical class 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 14
- 230000008021 deposition Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 35
- 239000007789 gas Substances 0.000 description 10
- 230000032258 transport Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000000859 sublimation Methods 0.000 description 7
- 230000008022 sublimation Effects 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 238000012423 maintenance Methods 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000007723 transport mechanism Effects 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000007733 ion plating Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Plasma Technology (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021016577A JP2022119452A (ja) | 2021-02-04 | 2021-02-04 | 処理装置 |
| CN202210040163.7A CN114855139B (zh) | 2021-02-04 | 2022-01-14 | 处理装置 |
| TW111101631A TWI808612B (zh) | 2021-02-04 | 2022-01-14 | 處理裝置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021016577A JP2022119452A (ja) | 2021-02-04 | 2021-02-04 | 処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2022119452A true JP2022119452A (ja) | 2022-08-17 |
Family
ID=82627921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021016577A Pending JP2022119452A (ja) | 2021-02-04 | 2021-02-04 | 処理装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2022119452A (zh) |
| CN (1) | CN114855139B (zh) |
| TW (1) | TWI808612B (zh) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05331618A (ja) * | 1992-05-29 | 1993-12-14 | Matsushita Electric Ind Co Ltd | 薄膜作製方法および薄膜作製装置 |
| JP4985490B2 (ja) * | 2008-03-12 | 2012-07-25 | 日新電機株式会社 | 成膜装置 |
| JP5405549B2 (ja) * | 2011-10-20 | 2014-02-05 | 株式会社日本製鋼所 | 真空成膜方法および真空成膜装置 |
| JP6054249B2 (ja) * | 2013-05-27 | 2016-12-27 | 住友重機械工業株式会社 | 成膜装置 |
| JP6218650B2 (ja) * | 2014-03-11 | 2017-10-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP6240695B2 (ja) * | 2016-03-02 | 2017-11-29 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
| JPWO2019131010A1 (ja) * | 2017-12-27 | 2020-12-17 | 株式会社アルバック | スパッタリング方法及びスパッタリング装置 |
| JP7373302B2 (ja) * | 2019-05-15 | 2023-11-02 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| JP7313929B2 (ja) * | 2019-06-26 | 2023-07-25 | 住友重機械工業株式会社 | 負イオン照射装置 |
-
2021
- 2021-02-04 JP JP2021016577A patent/JP2022119452A/ja active Pending
-
2022
- 2022-01-14 CN CN202210040163.7A patent/CN114855139B/zh active Active
- 2022-01-14 TW TW111101631A patent/TWI808612B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI808612B (zh) | 2023-07-11 |
| CN114855139A (zh) | 2022-08-05 |
| TW202231894A (zh) | 2022-08-16 |
| CN114855139B (zh) | 2024-10-29 |
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