JP2022107676A - 発光素子及びその製造方法 - Google Patents
発光素子及びその製造方法 Download PDFInfo
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- JP2022107676A JP2022107676A JP2022084212A JP2022084212A JP2022107676A JP 2022107676 A JP2022107676 A JP 2022107676A JP 2022084212 A JP2022084212 A JP 2022084212A JP 2022084212 A JP2022084212 A JP 2022084212A JP 2022107676 A JP2022107676 A JP 2022107676A
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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Abstract
Description
12001、12002、13001、13002、14001:発光装置
2、2a、2b、2c:発光ユニット
31:切断工具
32、32’:透明覆蓋層
40、42:透光底層
6、6’、60、62、64、64’、66、66’:波長変換層
80、82、84:透光頂層
86:透光層
100、101:保護層
102、102’:バリヤー層
1020:第一部分
1022:第二部分
1024:第三部分
104、104a、104b、104’、104”、106、108:絶縁層
104’’’:絶縁層材料
1040、1050:第一部分
1042、1052:第二部分
105:吸光層
142:接着層
200:下表面
201:載置基板
202:上表面
203:発光層
204、206、70040、70042:側表面
12:載置板
14、140:一時載置板
16:光フィルタリング層
20、22:導電層
402、608:界面
604、606:側壁
T:厚み
T1、T2:幅
T3、T4、T5:最大幅
Claims (10)
- 発光装置であって、
上表面、下表面、及び前記上表面と前記下表面との間に位置する側壁を含む第一発光ユニット;
第二発光ユニット;
前記第一発光ユニットと前記第二発光ユニットとの間に位置し、かつ前記側壁を取り囲む絶縁層;
前記第一発光ユニットの前記上表面上に位置する第一波長変換層;
前記第二発光ユニット上に位置し、かつ前記第一波長変換とは異なる材料を含む第二波長変換層;
前記第一波長変換層を取り囲む吸光層;及び
前記第一波長変換層を完全に覆う光フィルタリング層を含む、発光装置。 - 請求項1に記載の発光装置であって、
前記光フィルタリング層は前記第一波長変換層及び前記第二波長変換層を同時に覆う、発光装置。 - 請求項1に記載の発光装置であって、
前記第一発光ユニット及び前記第二発光ユニットは同じ波長の光を発する、発光装置。 - 請求項1に記載の発光装置であって、
前記絶縁層は前記第一発光ユニットからの光を反射する、発光装置。 - 請求項1に記載の発光装置であって、
第三発光ユニットをさらに含み、
前記第三発光ユニットは任意の波長変換層により覆われず、前記吸光層は前記第二波長変換層の側表面を覆う、発光装置。 - 請求項1に記載の発光装置であって、
前記光フィルタリング層は前記吸光層の上に位置する、発光装置。 - 請求項1に記載の発光装置であって、
前記第一発光ユニットが発する光は第一ピーク値を有し、前記第一ピーク値の波長は425nm未満である、発光装置。 - 請求項1に記載の発光装置であって、
前記第一波長変換層は基質及び量子ドット材料を含み、前記量子ドット材料は前記基質に分散している、発光装置。 - 請求項1に記載の発光装置であって、
前記第二波長変換層は前記吸光層によって取り囲まれる、発光装置。 - 請求項1に記載の発光装置であって、
前記光フィルタリング層は、前記第一発光ユニットが発した、前記第一波長変換層により吸収されない光を阻止するために用いられる、発光装置。
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