JP2022106115A - 炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置の製造方法 Download PDFInfo
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- JP2022106115A JP2022106115A JP2021000873A JP2021000873A JP2022106115A JP 2022106115 A JP2022106115 A JP 2022106115A JP 2021000873 A JP2021000873 A JP 2021000873A JP 2021000873 A JP2021000873 A JP 2021000873A JP 2022106115 A JP2022106115 A JP 2022106115A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 175
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 175
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 138
- 238000010438 heat treatment Methods 0.000 claims abstract description 65
- 239000012535 impurity Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- 229910052799 carbon Inorganic materials 0.000 claims description 24
- 230000001681 protective effect Effects 0.000 claims description 19
- 230000003213 activating effect Effects 0.000 claims 1
- 230000001603 reducing effect Effects 0.000 abstract description 6
- 238000005468 ion implantation Methods 0.000 description 31
- 230000007547 defect Effects 0.000 description 24
- 239000010410 layer Substances 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 239000013078 crystal Substances 0.000 description 22
- 235000012239 silicon dioxide Nutrition 0.000 description 18
- 238000009792 diffusion process Methods 0.000 description 14
- 239000010453 quartz Substances 0.000 description 13
- 238000012545 processing Methods 0.000 description 12
- 238000000137 annealing Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000004913 activation Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000000859 sublimation Methods 0.000 description 5
- 230000008022 sublimation Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
Description
Claims (4)
- 炭化珪素半導体装置の製造方法であって、
炭化珪素基板の表面に不純物を注入する第1工程と、
前記第1工程の後に、前記炭化珪素基板に対して、459度超えてかつ1100度以下の温度で熱処理を行う第2工程と
を備える、炭化珪素半導体装置の製造方法。 - 炭化珪素半導体装置の製造方法であって、
炭化珪素基板の表面に不純物を注入する第1工程と、
前記第1工程の後に、前記炭化珪素基板に対して、800度以上かつ1100度以下の温度で熱処理を行う第2工程と
を備える、炭化珪素半導体装置の製造方法。 - 前記第2工程は、カーボン保護膜が前記炭化珪素基板に形成されていない状態で行われる、請求項1または請求項2に記載の炭化珪素半導体装置の製造方法。
- 前記第2工程の後に、前記炭化珪素基板の表面にカーボン保護膜を形成する第3工程と、
前記第3工程の後に、前記炭化珪素基板に対して1600度以上の温度で熱処理を行って、前記不純物を活性化させる第4工程と
をさらに備える、請求項1から請求項3のいずれか1項に記載の炭化珪素半導体装置の製造方法。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000036470A (ja) * | 1998-07-21 | 2000-02-02 | Fuji Electric Co Ltd | 炭化けい素半導体装置の製造方法 |
JP2015056644A (ja) * | 2013-09-13 | 2015-03-23 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
JP2015095578A (ja) * | 2013-11-13 | 2015-05-18 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP2016530712A (ja) * | 2013-07-26 | 2016-09-29 | クリー インコーポレイテッドCree Inc. | 炭化ケイ素への制御されたイオン注入 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004022878A (ja) | 2002-06-18 | 2004-01-22 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP5092868B2 (ja) | 2008-04-18 | 2012-12-05 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000036470A (ja) * | 1998-07-21 | 2000-02-02 | Fuji Electric Co Ltd | 炭化けい素半導体装置の製造方法 |
JP2016530712A (ja) * | 2013-07-26 | 2016-09-29 | クリー インコーポレイテッドCree Inc. | 炭化ケイ素への制御されたイオン注入 |
JP2015056644A (ja) * | 2013-09-13 | 2015-03-23 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
JP2015095578A (ja) * | 2013-11-13 | 2015-05-18 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
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