JP2022056422A - 研磨パッド、研磨パッドの製造方法およびこれを用いた半導体素子の製造方法 - Google Patents
研磨パッド、研磨パッドの製造方法およびこれを用いた半導体素子の製造方法 Download PDFInfo
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- JP2022056422A JP2022056422A JP2021159778A JP2021159778A JP2022056422A JP 2022056422 A JP2022056422 A JP 2022056422A JP 2021159778 A JP2021159778 A JP 2021159778A JP 2021159778 A JP2021159778 A JP 2021159778A JP 2022056422 A JP2022056422 A JP 2022056422A
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- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 125000005474 octanoate group Chemical group 0.000 description 1
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- 150000002902 organometallic compounds Chemical class 0.000 description 1
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920005906 polyester polyol Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- ULWHHBHJGPPBCO-UHFFFAOYSA-N propane-1,1-diol Chemical compound CCC(O)O ULWHHBHJGPPBCO-UHFFFAOYSA-N 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 229920000468 styrene butadiene styrene block copolymer Polymers 0.000 description 1
- 229920001935 styrene-ethylene-butadiene-styrene Polymers 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- YXFVVABEGXRONW-UHFFFAOYSA-N toluene Substances CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- CYRMSUTZVYGINF-UHFFFAOYSA-N trichlorofluoromethane Chemical compound FC(Cl)(Cl)Cl CYRMSUTZVYGINF-UHFFFAOYSA-N 0.000 description 1
- 229940029284 trichlorofluoromethane Drugs 0.000 description 1
- WDIWAJVQNKHNGJ-UHFFFAOYSA-N trimethyl(propan-2-yl)silane Chemical compound CC(C)[Si](C)(C)C WDIWAJVQNKHNGJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/32—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof from compositions containing microballoons, e.g. syntactic foams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2203/00—Foams characterized by the expanding agent
- C08J2203/22—Expandable microspheres, e.g. Expancel®
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2205/00—Foams characterised by their properties
- C08J2205/04—Foams characterised by their properties characterised by the foam pores
- C08J2205/044—Micropores, i.e. average diameter being between 0,1 micrometer and 0,1 millimeter
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2207/00—Foams characterised by their intended use
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2375/00—Characterised by the use of polyureas or polyurethanes; Derivatives of such polymers
- C08J2375/04—Polyurethanes
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
Abstract
Description
(式1)
(式2)
ここで、
D10は、10%体積累積分布上の気孔の直径であり、
D50は、50%体積累積分布上の気孔の直径であり、
D90は、90%体積累積分布上の気孔の直径である。
(式3)
ここで、
D10は、10%体積累積分布上の気孔の直径であり、
D50は、50%体積累積分布上の気孔の直径であり、
D90は、90%体積累積分布上の気孔の直径である。
(式1)
(式2)
ここで、
D10は、10%体積累積分布上の気孔の直径であり、
D50は、50%体積累積分布上の気孔の直径であり、
D90は、90%体積累積分布上の気孔の直径である。
(式1)
(式2)
ここで、
D10は、10%体積累積分布上の気孔の直径であり、
D50は、50%体積累積分布上の気孔の直径であり、
D90は、90%体積累積分布上の気孔の直径である。
研磨率=シリコンウエハの研磨厚さ(Å)/研磨時間(60秒)
11:非膨張した粒子の外皮
12:膨張誘発成分
20:膨張した粒子
30:硬化工程
40:研磨層内の気孔
110:研磨パッド
120:定盤
130:半導体基板
140:ノズル
150:研磨スラリー
160:研磨ヘッド
170:コンディショナ
Claims (10)
- 前記研磨層に形成された気孔は、D50が15~65μmである、
請求項1に記載の研磨パッド。 - 前記研磨層は、半導体基板との実接触面積(Real Contact Area)が0.02~0.05mm2である、
請求項1に記載の研磨パッド。 - 前記研磨層は、非膨張した(Unexpanded)固相発泡剤に由来する外皮を含み、
前記外皮は、塩化ビニリデン系共重合体、アクリロニトリル系共重合体、メタクリロニトリル系共重合体、およびアクリル系共重合体からなる群より選択された1種以上である、
請求項1に記載の研磨パッド。 - 前記iii)ステップは、研磨層製造用組成物を予熱されたモールドに注入して硬化するもので、
前記モールドの予熱温度は、50~150℃である、
請求項6に記載の研磨パッドの製造方法。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001239455A (ja) * | 2000-02-29 | 2001-09-04 | Hitachi Chem Co Ltd | 研磨パッドの製造方法 |
JP2007081322A (ja) * | 2005-09-16 | 2007-03-29 | Jsr Corp | 化学機械研磨パッドの製造方法 |
JP2009214272A (ja) * | 2008-03-12 | 2009-09-24 | Toyo Tire & Rubber Co Ltd | 研磨パッド |
JP2019024078A (ja) * | 2017-05-29 | 2019-02-14 | エスケイシー・カンパニー・リミテッドSkc Co., Ltd. | 多孔質ポリウレタン研磨パッドおよびそれを用いて半導体デバイスを調製するための方法 |
JP2019069497A (ja) * | 2017-10-11 | 2019-05-09 | 富士紡ホールディングス株式会社 | 研磨パッド及び研磨パッドの製造方法 |
JP2019188594A (ja) * | 2018-04-17 | 2019-10-31 | エスケイシー・カンパニー・リミテッドSkc Co., Ltd. | 多孔質研磨パッドおよびその製造方法 |
JP2019195901A (ja) * | 2018-04-20 | 2019-11-14 | エスケイシー・カンパニー・リミテッドSkc Co., Ltd. | 多孔質ポリウレタン研磨パッドおよびその製造方法 |
JP2020506070A (ja) * | 2017-01-12 | 2020-02-27 | エスケイシー・カンパニー・リミテッドSkc Co., Ltd. | 多孔質ポリウレタン研磨パッドおよびその作製方法 |
Family Cites Families (3)
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JP2010274362A (ja) * | 2009-05-28 | 2010-12-09 | Nitta Haas Inc | 発泡ポリウレタンの製造方法および研磨パッドの製造方法 |
US9073172B2 (en) * | 2012-05-11 | 2015-07-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Alkaline-earth metal oxide-polymeric polishing pad |
KR102088919B1 (ko) * | 2017-09-11 | 2020-03-13 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이의 제조방법 |
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001239455A (ja) * | 2000-02-29 | 2001-09-04 | Hitachi Chem Co Ltd | 研磨パッドの製造方法 |
JP2007081322A (ja) * | 2005-09-16 | 2007-03-29 | Jsr Corp | 化学機械研磨パッドの製造方法 |
JP2009214272A (ja) * | 2008-03-12 | 2009-09-24 | Toyo Tire & Rubber Co Ltd | 研磨パッド |
JP2020506070A (ja) * | 2017-01-12 | 2020-02-27 | エスケイシー・カンパニー・リミテッドSkc Co., Ltd. | 多孔質ポリウレタン研磨パッドおよびその作製方法 |
JP2019024078A (ja) * | 2017-05-29 | 2019-02-14 | エスケイシー・カンパニー・リミテッドSkc Co., Ltd. | 多孔質ポリウレタン研磨パッドおよびそれを用いて半導体デバイスを調製するための方法 |
JP2019069497A (ja) * | 2017-10-11 | 2019-05-09 | 富士紡ホールディングス株式会社 | 研磨パッド及び研磨パッドの製造方法 |
JP2019188594A (ja) * | 2018-04-17 | 2019-10-31 | エスケイシー・カンパニー・リミテッドSkc Co., Ltd. | 多孔質研磨パッドおよびその製造方法 |
JP2019195901A (ja) * | 2018-04-20 | 2019-11-14 | エスケイシー・カンパニー・リミテッドSkc Co., Ltd. | 多孔質ポリウレタン研磨パッドおよびその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022210165A1 (ja) * | 2021-03-30 | 2022-10-06 | 富士紡ホールディングス株式会社 | 研磨パッド及び研磨パッドの製造方法 |
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