JP2020506070A - 多孔質ポリウレタン研磨パッドおよびその作製方法 - Google Patents
多孔質ポリウレタン研磨パッドおよびその作製方法 Download PDFInfo
- Publication number
- JP2020506070A JP2020506070A JP2019537816A JP2019537816A JP2020506070A JP 2020506070 A JP2020506070 A JP 2020506070A JP 2019537816 A JP2019537816 A JP 2019537816A JP 2019537816 A JP2019537816 A JP 2019537816A JP 2020506070 A JP2020506070 A JP 2020506070A
- Authority
- JP
- Japan
- Prior art keywords
- polishing pad
- porous polyurethane
- polyurethane polishing
- void
- voids
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C44/00—Shaping by internal pressure generated in the material, e.g. swelling or foaming ; Producing porous or cellular expanded plastics articles
- B29C44/02—Shaping by internal pressure generated in the material, e.g. swelling or foaming ; Producing porous or cellular expanded plastics articles for articles of definite length, i.e. discrete articles
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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Abstract
Description
プレポリマー(prepolymer)とは、作製プロセスにて最終成形品を成形しやすいように重合度を中間レベルで停止させた、比較的低い分子量を有する高分子のことを概して意味する。プレポリマーは、それ自体で、または他の重合性化合物と反応させた後に成形することができ、例えば、イソシアネート化合物とポリオールを反応させてプレポリマーを作製することができる。
などの低分子量炭化水素と;
トリクロロフルオロメタン(trichlorofluoromethane、CCl3F)、ジクロロジフルオロメタン(dichlorodifluoromethane、CCl2F2)、クロロトリフルオロメタン(chlorotrifluoromethane、CClF3)、テトラフルオロエチレン(tetrafluoroethylene、CClF2−CClF2)などのクロロフルオロ炭化水素と;テトラメチルシラン(tetramethylsilane)、トリメチルエチルシラン(trimethylethylsilane)、トリメチルイソプロピルシラン(trimethylisopropylsilane)、トリメチル−n−プロピルシラン(trimethyl-n-propylsilane)などのテトラアルキルシランとからなる群より選択され得る。
前記ウレタン系プレポリマーと硬化剤とは混合時に相互に反応し、固相のポリウレタンが形成され、次いでシート等に作製される。具体的に、前記ウレタン系プレポリマーのイソシアネート末端基は、前記硬化剤のアミン基、アルコール基等と反応することができる。この時、不活性ガスおよび固相発泡剤は、ウレタン系プレポリマーと硬化剤との反応に関与せず、原料内に均一に分散されて空隙を形成する。
前記成形は、モールド(mold)を用いて行われる。具体的には、ミキシングヘッドなどで十分に撹拌された原料(ウレタン系プレポリマー、硬化剤、および固相発泡剤を含む混合物)をモールドに注入してモールド内部を満たす。
−多孔質ポリウレタン研磨パッドの作製−
<1−1:装置の構成>
ウレタン系プレポリマー、硬化剤、不活性ガス注入、および反応速度調整剤のための注入ラインが備えられているキャスティング装置において、プレポリマータンクに未反応NCOの含有量が9.1重量%であるPUGL−550D(SKC社製、重量平均分子量:1200g/mol)を充填し、硬化剤タンクにビス(4−アミノ−3−クロロフェニル)メタン(bis(4-amino-3-chlorophenyl)methane、イシハラ社製)を充填し、不活性ガスとして窒素(N2)を、反応速度調整剤として反応促進剤(メーカー:Airproduct、製品名:A1、3級アミン系化合物)を準備した。また、前記ウレタン系プレポリマー100重量部に対して、2重量部の固相発泡剤(メーカー:Akzonobel社、製品名:Expancel-461 DET20 d40、平均粒径:20μm)、および1重量部のシリコーン界面活性剤(メーカー:Evonik社、製品名:B8462)を予め混合してからプレポリマータンクに注入した。
それぞれの投入ラインを介してウレタン系プレポリマー、硬化剤、固相発泡剤、反応速度調整剤、および不活性ガスをミキシングヘッドに一定の速度で投入しながら撹拌した。このとき、ウレタン系プレポリマーのNCO基のモル当量と硬化剤の反応性基のモル当量を1:1に合わせ、合計投入量を10kg/分の速度に維持した。また、不活性ガスは、ウレタン系プレポリマー、硬化剤、固相発泡剤、反応速度調整剤、およびシリコーン界面活性剤の合計体積の30%の体積で一定に投入し、反応速度調整剤はウレタン系プレポリマー100重量部を基準に1重量部の量で投入した。
不活性ガスをウレタン系プレポリマー、硬化剤、固相発泡剤、反応速度調整剤、およびシリコーン界面活性剤の合計体積の25%の体積で一定に投入したことを除いては、実施例1と同様の方法により、平均厚さ2mmの多孔質ポリウレタン研磨パッドを作製した。
固相発泡剤を使用せず、不活性ガスをウレタン系プレポリマー、硬化剤、固相発泡剤、反応速度調整剤、およびシリコーン界面活性剤の合計体積の35%の体積で一定に投入したことを除いては、実施例1と同様の方法により、多孔質ポリウレタン研磨パッドを作製した。
不活性ガスをウレタン系プレポリマー、硬化剤、固相発泡剤、反応速度調整剤、およびシリコーン界面活性剤の合計体積の17%の体積で一定に投入したことを除いては、実施例1と同様の方法により、多孔質ポリウレタン研磨パッドを作製した。
前記実施例および比較例において作製した研磨パッドについて、下記のような条件および手順により、それぞれの物性を測定し、その結果を下記の表1、および図1〜図4に示した。
ショアD硬度を測定し、研磨パッドを2cm×2cm(厚さ:約2mm)の大きさに切った後、温度23℃、30℃、50℃、および70℃、湿度50±5%の環境で16時間静置した。その後、硬度計(D型硬度計)を用いて研磨パッドの硬度を測定した。
研磨パッドを4cm×8.5cmの長方形(厚さ:2mm)に切った後、温度23±2℃、湿度50±5%の環境で16時間静置した。比重計を用いて研磨パッドの比重を測定した。
万能試験機(UTM)を用いて、50mm/分の速度で研磨パッドをテストしながら破断直前の最高強度(又は終局又は極限強度;ultimate strength)値を測定した。
引張強度の測定方法と同様にテストして、破断直前の最大変形量を測定した後、初期長さに対する最大変形量の比をパーセント(%)で示した。
研磨パッドを2cm×2cmの正方形(厚さ:2mm)に切った後、走査電子顕微鏡(SEM)を使用して100倍で観察した。画像解析ソフトウェアを使用して得られた画像から、全空隙の径を測定し、空隙平均径、単位面積当たりの空隙数、空隙面積率、および空隙径分布図を算出した。実施例1のSEM写真を図1に、実施例2のSEM写真を図2に、比較例1のSEM写真を図3に示した。また、算出された空隙径分布図を図4に示した。
SMEM Instruments社のSM−100BDV(モデル名)、100kV Brake Down Voltage Tester(装置名)を使用して、10ポイントの耐電圧を測定して、その平均値を求めた。
CMP研磨機器にてプラテン上に設けた前記多孔質ポリウレタン研磨パッドに、TEOS−プラズマCVD法で作製した酸化ケイ素膜が形成された直径300mmのシリコンウェーハを、シリコンウェーハの酸化ケイ素膜面を下に方向づけて設置した。その後、121rpmの速度でシリコンウェーハを回転させ、115rpmの速度で60秒間プラテンを回転させ、190ml/分の速度で研磨パッド上にか焼シリカスラリーを投入しながら,1.4psiの研磨荷重で酸化ケイ素膜を研磨した。研磨後、シリコンウェーハをキャリアから外して、スピンドライヤーに装着して精製水(DIW)で洗浄した後、空気により15秒間乾燥した。乾燥されたシリコンウェーハを、光干渉式膜厚測定装置を使用して研磨前後の膜厚変化を測定し、研磨率を計算した。実施例2の研磨率を100%に基準して、実施例および比較例の研磨率を測定した。
Claims (13)
- ウレタン系プレポリマーおよび硬化剤を含む多孔質ポリウレタン研磨パッドであって、
厚さが1.5〜2.5mmであり、平均空隙径が10〜40μmであり、比重が0.7〜0.9g/cm3であり、25℃における表面硬度が50〜65ショアDであり、引張強度が15〜25N/mm2であり、伸び率が80〜250%であり、空隙の総面積が研磨パッド総面積を基準に30〜60%であり、耐電圧が14〜23kVである、多孔質ポリウレタン研磨パッド。 - 前記ウレタン系プレポリマー100重量部を基準に0.5〜10重量部の固相発泡剤を含む、請求項1に記載の多孔質ポリウレタン研磨パッド。
- 前記固相発泡剤は平均粒径が10〜50μmであり、
前記多孔質ポリウレタン研磨パッドは、耐電圧が14〜22kVである、請求項2に記載の多孔質ポリウレタン研磨パッド - 前記多孔質ポリウレタン研磨パッドが反応速度調整剤をさらに含み、
前記多孔質ポリウレタン研磨パッドが、互いに大きさの異なる第1空隙および第2空隙を含む、請求項2に記載の多孔質ポリウレタン研磨パッド。 - 前記第1空隙が固相発泡剤から形成され、
前記第2空隙が不活性気体から形成される、請求項4に記載の多孔質ポリウレタン研磨パッド。 - 前記第1空隙が、第1固相発泡剤から形成され、
前記第2空隙が、前記第1固相発泡剤とは平均粒径が異なる第2固相発泡剤から形成される、請求項4に記載の多孔質ポリウレタン研磨パッド。 - 前記第2空隙の総面積のうち5〜45%を占める第2−1空隙の粒径が第1空隙の平均粒径よりも5μm以上分小さく、前記第2空隙の総面積のうち5〜45%を占める第2−2空隙の粒径が第1空隙の平均粒径よりも5μm以下分大きい、請求項4に記載の多孔質ポリウレタン研磨パッド。
- 前記反応速度調整剤が、トリエチレンジアミン、ジメチルエタノールアミン、テトラメチルブタンジアミン、2−メチル−トリエチレンジアミン、ジメチルシクロヘキシルアミン、トリエチルアミン、トリイソプロパノールアミン、ビス(2−メチルアミノエチル)エーテル、トリメチルアミノエチルエタノールアミン、N,N,N,N,N’’−ペンタメチルジエチレントリアミン、ジメチルアミノエチルアミン、ジメチルアミノプロピルアミン、ベンジルジメチルアミン、N−エチルモルホリン、N,N−ジメチルアミノエチルモルホリン、N,N−ジメチルシクロヘキシルアミン、2−メチル−2−アザノルボルナン(2-methyl-2-azanorbornane)、ジラウリン酸ジブチルスズ(dibutyltin dilaurate)、ジ(2−エチルヘキサン酸)スズ(stannous octoate)、二酢酸ジブチルスズ(dibutyltin diacetate)、二酢酸ジオクチルスズ(diocthyltin diacetate)、ジブチルスズマレアート(dibutyltin maleate)、ジブチルスズジ(2−エチルヘキサノエート)(dibutyltin di-2-ethylhexanoate)、およびジブチルスズビス(ラウリルメルカプチド)( dibutyltin bis (lauryl mercaptide ))からなる群より選ばれる1種以上を含む、請求項4に記載の多孔質ポリウレタン研磨パッド。
- 前記ウレタン系プレポリマーは、イソシアネート化合物とポリオールとを反応させて作製され、
前記硬化剤は、アミン化合物およびアルコール化合物からなる群より選ばれる1種以上を含む、請求項1に記載の多孔質ポリウレタン研磨パッド。 - (1)ウレタン系プレポリマー、硬化剤、および固相発泡剤を含む混合物をモールド内に注入して混合物を成形する工程と、
(2)前記混合物を硬化させる工程とを含む多孔質ポリウレタン研磨パッドの作製方法であって、
前記固相発泡剤が、ウレタン系プレポリマー100重量部を基準に0.5〜10重量部の含有量で含まれ、
厚さが1.5〜2.5mmであり、平均空隙径が10〜40μmであり、比重が0.7〜0.9g/cm3であり、25℃における表面硬度が50〜65ショアDであり、
引張強度が15〜25N/mm2であり、伸び率が80〜250%であり、空隙の総面積が研磨パッドの総面積を基準に30〜60%であり、耐電圧が14〜23kVである、多孔質ポリウレタン研磨パッドの作製方法。 - 前記工程(1)において、前記混合物のモールド内注入の際、モールド内に不活性ガスを投入し、
前記不活性ガスが前記混合物の総体積を基準に20〜35%の体積で投入される、請求項10に記載の多孔質ポリウレタン研磨パッドの作製方法。 - 前記混合物が、反応速度調整剤をさらに含み、
前記反応速度調整剤が3級アミン系化合物および有機金属系化合物からなる群より選ばれる1種以上である、請求項11に記載の多孔質ポリウレタン研磨パッドの作製方法。 - 前記反応速度調整剤が、トリエチレンジアミン、ジメチルエタノールアミン、テトラメチルブタンジアミン、2−メチル−トリエチレンジアミン、ジメチルシクロヘキシルアミン、トリエチルアミン、トリイソプロパノールアミン、ビス(2−メチルアミノエチル)エーテル、トリメチルアミノエチルエタノールアミン、N,N,N,N,N’’−ペンタメチルジエチレントリアミン、ジメチルアミノエチルアミン、ジメチルアミノプロピルアミン、ベンジルジメチルアミン、N−エチルモルホリン、N,N−ジメチルアミノエチルモルホリン、N,N−ジメチルシクロヘキシルアミン、2−メチル−2−アザノルボルナン、ジラウリン酸ジブチルスズ、ジ(2−エチルヘキサン酸)スズ(stannous octoate)、二酢酸ジブチルスズ(dibutyltin diacetate)、二酢酸ジオクチルスズ(diocthyltin diacetate)、ジブチルスズマレアート(dibutyltin maleate)、ジブチルスズジ(2−エチルヘキサノエート)(dibutyltin di-2-ethylhexanoate)およびジブチルスズビス(ラウリルメルカプチド)( dibutyltin bis (lauryl mercaptide ))からなる群より選ばれる1種以上を含む、請求項12に記載の多孔質ポリウレタン研磨パッドの作製方法。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022056422A (ja) * | 2020-09-29 | 2022-04-08 | エスケーシー ソルミックス カンパニー,リミテッド | 研磨パッド、研磨パッドの製造方法およびこれを用いた半導体素子の製造方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102058877B1 (ko) * | 2018-04-20 | 2019-12-24 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이의 제조방법 |
KR102129664B1 (ko) * | 2018-07-26 | 2020-07-02 | 에스케이씨 주식회사 | 연마패드, 이의 제조방법 및 이를 이용한 연마방법 |
KR102129665B1 (ko) * | 2018-07-26 | 2020-07-02 | 에스케이씨 주식회사 | 연마패드, 이의 제조방법 및 이를 이용한 연마방법 |
KR102141743B1 (ko) | 2018-12-18 | 2020-08-05 | 에스케이씨 주식회사 | 연마층의 제조방법, 연마층 제조용 분급장치 및 이를 포함하는 연마층의 제조장치 |
TWI735101B (zh) * | 2018-12-26 | 2021-08-01 | 南韓商Skc索密思股份有限公司 | 用於研磨墊之組成物、研磨墊及用於製備其之方法 |
KR102277418B1 (ko) * | 2019-05-21 | 2021-07-14 | 에스케이씨솔믹스 주식회사 | 가교 밀도가 향상된 연마패드 및 이의 제조방법 |
US11628535B2 (en) | 2019-09-26 | 2023-04-18 | Skc Solmics Co., Ltd. | Polishing pad, method for manufacturing polishing pad, and polishing method applying polishing pad |
TWI741753B (zh) * | 2019-10-29 | 2021-10-01 | 南韓商Skc索密思股份有限公司 | 研磨墊、製造該研磨墊之方法及使用該研磨墊以製造半導體裝置之方法 |
KR102317123B1 (ko) | 2019-11-22 | 2021-10-22 | 에스케이씨솔믹스 주식회사 | 고상발포제 분급 정제 장치 및 고상발포제의 분급정제 방법 |
CN114589620B (zh) * | 2020-12-03 | 2023-05-23 | 中国科学院微电子研究所 | 半导体研磨垫及制备方法 |
KR102561824B1 (ko) * | 2021-06-02 | 2023-07-31 | 에스케이엔펄스 주식회사 | 연마패드 및 이를 이용한 반도체 소자의 제조방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995030711A1 (fr) * | 1994-05-10 | 1995-11-16 | Asahi Kasei Kogyo Kabushiki Kaisha | Mousse de fluororesine et procede de production de ladite mousse |
JP2006320980A (ja) * | 2005-05-17 | 2006-11-30 | Toyo Tire & Rubber Co Ltd | 研磨パッド |
JP2009117815A (ja) * | 2007-10-18 | 2009-05-28 | Jsr Corp | 化学機械研磨パッドの製造方法 |
JP2013539927A (ja) * | 2010-10-15 | 2013-10-28 | ネクスプラナー コーポレイション | 気孔直径の多峰性分布をもつ研磨パッド |
JP2015134402A (ja) * | 2013-12-17 | 2015-07-27 | 富士紡ホールディングス株式会社 | ラッピング用樹脂定盤及びそれを用いたラッピング方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI385050B (zh) | 2005-02-18 | 2013-02-11 | Nexplanar Corp | 用於cmp之特製拋光墊及其製造方法及其用途 |
US7435364B2 (en) * | 2005-04-11 | 2008-10-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for forming a porous polishing pad |
KR100949560B1 (ko) * | 2005-05-17 | 2010-03-25 | 도요 고무 고교 가부시키가이샤 | 연마 패드 |
KR100804275B1 (ko) | 2006-07-24 | 2008-02-18 | 에스케이씨 주식회사 | 고분자 쉘로 둘러싸인 액상 유기물 코어를 포함하는 cmp연마패드 및 그 제조방법 |
US8052507B2 (en) | 2007-11-20 | 2011-11-08 | Praxair Technology, Inc. | Damping polyurethane CMP pads with microfillers |
US20100035529A1 (en) * | 2008-08-05 | 2010-02-11 | Mary Jo Kulp | Chemical mechanical polishing pad |
JP5522929B2 (ja) | 2008-12-03 | 2014-06-18 | 国立大学法人九州大学 | 研磨パッド及び研磨方法 |
KR101186531B1 (ko) | 2009-03-24 | 2012-10-08 | 차윤종 | 폴리우레탄 다공질체의 제조방법과 그 제조방법에 따른 폴리우레탄 다공질체 및 폴리우레탄 다공질체를 구비한 연마패드 |
US9102034B2 (en) * | 2013-08-30 | 2015-08-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of chemical mechanical polishing a substrate |
JP6315246B2 (ja) * | 2014-03-31 | 2018-04-25 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
US9586304B2 (en) * | 2014-12-19 | 2017-03-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Controlled-expansion CMP PAD casting method |
KR101835087B1 (ko) * | 2017-05-29 | 2018-03-06 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이를 사용하여 반도체 소자를 제조하는 방법 |
KR101835090B1 (ko) * | 2017-05-29 | 2018-03-06 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이를 사용하여 반도체 소자를 제조하는 방법 |
US10391606B2 (en) * | 2017-06-06 | 2019-08-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pads for improved removal rate and planarization |
KR101949905B1 (ko) * | 2017-08-23 | 2019-02-19 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이의 제조방법 |
KR102058877B1 (ko) * | 2018-04-20 | 2019-12-24 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이의 제조방법 |
US11628535B2 (en) * | 2019-09-26 | 2023-04-18 | Skc Solmics Co., Ltd. | Polishing pad, method for manufacturing polishing pad, and polishing method applying polishing pad |
-
2017
- 2017-01-12 KR KR1020170005301A patent/KR101853021B1/ko active IP Right Grant
-
2018
- 2018-01-09 CN CN201880006888.6A patent/CN110191781B/zh active Active
- 2018-01-09 US US16/462,180 patent/US11325222B2/en active Active
- 2018-01-09 WO PCT/KR2018/000415 patent/WO2018131868A1/ko active Application Filing
- 2018-01-09 JP JP2019537816A patent/JP6991224B2/ja active Active
- 2018-01-11 TW TW107101073A patent/TWI707744B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995030711A1 (fr) * | 1994-05-10 | 1995-11-16 | Asahi Kasei Kogyo Kabushiki Kaisha | Mousse de fluororesine et procede de production de ladite mousse |
JP2006320980A (ja) * | 2005-05-17 | 2006-11-30 | Toyo Tire & Rubber Co Ltd | 研磨パッド |
JP2009117815A (ja) * | 2007-10-18 | 2009-05-28 | Jsr Corp | 化学機械研磨パッドの製造方法 |
JP2013539927A (ja) * | 2010-10-15 | 2013-10-28 | ネクスプラナー コーポレイション | 気孔直径の多峰性分布をもつ研磨パッド |
JP2015134402A (ja) * | 2013-12-17 | 2015-07-27 | 富士紡ホールディングス株式会社 | ラッピング用樹脂定盤及びそれを用いたラッピング方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022056422A (ja) * | 2020-09-29 | 2022-04-08 | エスケーシー ソルミックス カンパニー,リミテッド | 研磨パッド、研磨パッドの製造方法およびこれを用いた半導体素子の製造方法 |
JP7286228B2 (ja) | 2020-09-29 | 2023-06-05 | エスケー エンパルス カンパニー リミテッド | 研磨パッド、研磨パッドの製造方法およびこれを用いた半導体素子の製造方法 |
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