JP2022041671A5 - - Google Patents

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Publication number
JP2022041671A5
JP2022041671A5 JP2020147017A JP2020147017A JP2022041671A5 JP 2022041671 A5 JP2022041671 A5 JP 2022041671A5 JP 2020147017 A JP2020147017 A JP 2020147017A JP 2020147017 A JP2020147017 A JP 2020147017A JP 2022041671 A5 JP2022041671 A5 JP 2022041671A5
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JP
Japan
Prior art keywords
current
switching circuit
driven switching
mosfet
threshold voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2020147017A
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English (en)
Japanese (ja)
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JP2022041671A (ja
JP7547874B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2020147017A external-priority patent/JP7547874B2/ja
Priority to JP2020147017A priority Critical patent/JP7547874B2/ja
Priority to US18/021,441 priority patent/US12301221B2/en
Priority to PCT/JP2021/030013 priority patent/WO2022050040A1/ja
Priority to EP21864098.5A priority patent/EP4210225A4/en
Priority to CN202180050358.3A priority patent/CN115885474A/zh
Publication of JP2022041671A publication Critical patent/JP2022041671A/ja
Publication of JP2022041671A5 publication Critical patent/JP2022041671A5/ja
Publication of JP7547874B2 publication Critical patent/JP7547874B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2020147017A 2020-09-01 2020-09-01 過電流保護回路及びスイッチング回路 Active JP7547874B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2020147017A JP7547874B2 (ja) 2020-09-01 2020-09-01 過電流保護回路及びスイッチング回路
CN202180050358.3A CN115885474A (zh) 2020-09-01 2021-08-17 过电流保护电路和开关电路
PCT/JP2021/030013 WO2022050040A1 (ja) 2020-09-01 2021-08-17 過電流保護回路及びスイッチング回路
EP21864098.5A EP4210225A4 (en) 2020-09-01 2021-08-17 Overcurrent protection circuit, and switching circuit
US18/021,441 US12301221B2 (en) 2020-09-01 2021-08-17 Overcurrent protection circuit for protecting semiconductor device from overcurrent at high speed, and switching circuit provided with the overcurrent protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020147017A JP7547874B2 (ja) 2020-09-01 2020-09-01 過電流保護回路及びスイッチング回路

Publications (3)

Publication Number Publication Date
JP2022041671A JP2022041671A (ja) 2022-03-11
JP2022041671A5 true JP2022041671A5 (https=) 2023-03-01
JP7547874B2 JP7547874B2 (ja) 2024-09-10

Family

ID=80490762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020147017A Active JP7547874B2 (ja) 2020-09-01 2020-09-01 過電流保護回路及びスイッチング回路

Country Status (5)

Country Link
US (1) US12301221B2 (https=)
EP (1) EP4210225A4 (https=)
JP (1) JP7547874B2 (https=)
CN (1) CN115885474A (https=)
WO (1) WO2022050040A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112021008182T5 (de) * 2021-08-31 2024-07-25 Mitsubishi Electric Corporation Halbleiter-treibereinrichtung und stromrichtereinrichtung, die eine solche halbleiter-treibereinrichtung aufweist

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5675469A (en) * 1995-07-12 1997-10-07 Motorola, Inc. Integrated circuit with electrostatic discharge (ESD) protection and ESD protection circuit
TW441068B (en) 1998-03-18 2001-06-16 Em Microelectronic Marin Sa Structure for protecting a circuit against electrostatic discharge
JP3572577B2 (ja) * 2000-03-10 2004-10-06 富士通アクセス株式会社 過電流保護回路
WO2002037566A2 (en) * 2000-11-06 2002-05-10 Sarnoff Corporation Silicon controlled rectifier electrostatic discharge protection device with external on-chip triggering and compact internal dimensions for fast triggering
TW511269B (en) 2001-03-05 2002-11-21 Taiwan Semiconductor Mfg Silicon-controlled rectifier device having deep well region structure and its application on electrostatic discharge protection circuit
WO2002075891A1 (en) 2001-03-16 2002-09-26 Sarnoff Corporation Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies
US7548401B2 (en) 2001-03-16 2009-06-16 Sarnoff Corporation Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies
JP2006014402A (ja) 2004-06-22 2006-01-12 Toshiba Mitsubishi-Electric Industrial System Corp 電力変換装置の過電流保護装置
JP2011078235A (ja) * 2009-09-30 2011-04-14 Fujitsu Ten Ltd 過電流保護回路及び車載用表示装置
CN201781415U (zh) * 2010-03-19 2011-03-30 康佳集团股份有限公司 一种短路和过流保护的直流稳压电路
CN102315757B (zh) * 2010-07-07 2014-07-09 台达能源技术（上海）有限公司 驱动功率开关元件的驱动器
CN102122881B (zh) * 2011-02-21 2013-02-13 北京科诺伟业科技有限公司 一种应用于风力发电的大功率igbt驱动保护电路
US9203237B2 (en) 2012-04-24 2015-12-01 Nxp B.V. Protection circuit
JP5776658B2 (ja) * 2012-09-24 2015-09-09 トヨタ自動車株式会社 半導体駆動装置
US10283959B2 (en) 2014-08-01 2019-05-07 International Business Machines Corporation ESD state-controlled semiconductor-controlled rectifier
WO2016114416A1 (ko) * 2015-01-13 2016-07-21 주식회사 실리콘웍스 클램핑 회로에 대한 밸런싱 회로를 포함하는 인덕티브 로드 구동 회로 및 그 제어 방법
CN105958847A (zh) * 2016-06-12 2016-09-21 成都飞凯瑞科技有限公司 一种基于过压过流保护电路的集成稳压式恒流电源
JP6992696B2 (ja) * 2018-07-26 2022-01-13 オムロン株式会社 スイッチ回路及び電力変換装置
JP6965902B2 (ja) * 2019-02-01 2021-11-10 オムロン株式会社 過電流保護回路及びスイッチング回路
US12212132B2 (en) * 2019-09-12 2025-01-28 Omron Corporation Overcurrent protection circuit for protecting overcurrent flowing through switching element and switching circuit with the overcurent protection circuit

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