JP7547874B2 - 過電流保護回路及びスイッチング回路 - Google Patents

過電流保護回路及びスイッチング回路 Download PDF

Info

Publication number
JP7547874B2
JP7547874B2 JP2020147017A JP2020147017A JP7547874B2 JP 7547874 B2 JP7547874 B2 JP 7547874B2 JP 2020147017 A JP2020147017 A JP 2020147017A JP 2020147017 A JP2020147017 A JP 2020147017A JP 7547874 B2 JP7547874 B2 JP 7547874B2
Authority
JP
Japan
Prior art keywords
circuit
transistor
voltage
overcurrent protection
protection circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020147017A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022041671A (ja
JP2022041671A5 (https=
Inventor
聡 岩井
葵 末木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corp filed Critical Omron Corp
Priority to JP2020147017A priority Critical patent/JP7547874B2/ja
Priority to CN202180050358.3A priority patent/CN115885474A/zh
Priority to PCT/JP2021/030013 priority patent/WO2022050040A1/ja
Priority to EP21864098.5A priority patent/EP4210225A4/en
Priority to US18/021,441 priority patent/US12301221B2/en
Publication of JP2022041671A publication Critical patent/JP2022041671A/ja
Publication of JP2022041671A5 publication Critical patent/JP2022041671A5/ja
Application granted granted Critical
Publication of JP7547874B2 publication Critical patent/JP7547874B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0006—Arrangements for supplying an adequate voltage to the control circuit of converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0009—Devices or circuits for detecting current in a converter
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
JP2020147017A 2020-09-01 2020-09-01 過電流保護回路及びスイッチング回路 Active JP7547874B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2020147017A JP7547874B2 (ja) 2020-09-01 2020-09-01 過電流保護回路及びスイッチング回路
CN202180050358.3A CN115885474A (zh) 2020-09-01 2021-08-17 过电流保护电路和开关电路
PCT/JP2021/030013 WO2022050040A1 (ja) 2020-09-01 2021-08-17 過電流保護回路及びスイッチング回路
EP21864098.5A EP4210225A4 (en) 2020-09-01 2021-08-17 Overcurrent protection circuit, and switching circuit
US18/021,441 US12301221B2 (en) 2020-09-01 2021-08-17 Overcurrent protection circuit for protecting semiconductor device from overcurrent at high speed, and switching circuit provided with the overcurrent protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020147017A JP7547874B2 (ja) 2020-09-01 2020-09-01 過電流保護回路及びスイッチング回路

Publications (3)

Publication Number Publication Date
JP2022041671A JP2022041671A (ja) 2022-03-11
JP2022041671A5 JP2022041671A5 (https=) 2023-03-01
JP7547874B2 true JP7547874B2 (ja) 2024-09-10

Family

ID=80490762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020147017A Active JP7547874B2 (ja) 2020-09-01 2020-09-01 過電流保護回路及びスイッチング回路

Country Status (5)

Country Link
US (1) US12301221B2 (https=)
EP (1) EP4210225A4 (https=)
JP (1) JP7547874B2 (https=)
CN (1) CN115885474A (https=)
WO (1) WO2022050040A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112021008182T5 (de) * 2021-08-31 2024-07-25 Mitsubishi Electric Corporation Halbleiter-treibereinrichtung und stromrichtereinrichtung, die eine solche halbleiter-treibereinrichtung aufweist

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004533713A (ja) 2001-03-16 2004-11-04 サーノフ コーポレイション 混成した超低電圧電源を備えた、高速技術のための静電放電保護構造
US20130279053A1 (en) 2012-04-24 2013-10-24 Hans-Martin Ritter Protection circuit
JP2020127267A (ja) 2019-02-01 2020-08-20 オムロン株式会社 過電流保護回路及びスイッチング回路

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5675469A (en) * 1995-07-12 1997-10-07 Motorola, Inc. Integrated circuit with electrostatic discharge (ESD) protection and ESD protection circuit
TW441068B (en) 1998-03-18 2001-06-16 Em Microelectronic Marin Sa Structure for protecting a circuit against electrostatic discharge
JP3572577B2 (ja) * 2000-03-10 2004-10-06 富士通アクセス株式会社 過電流保護回路
WO2002037566A2 (en) * 2000-11-06 2002-05-10 Sarnoff Corporation Silicon controlled rectifier electrostatic discharge protection device with external on-chip triggering and compact internal dimensions for fast triggering
TW511269B (en) 2001-03-05 2002-11-21 Taiwan Semiconductor Mfg Silicon-controlled rectifier device having deep well region structure and its application on electrostatic discharge protection circuit
US7548401B2 (en) 2001-03-16 2009-06-16 Sarnoff Corporation Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies
JP2006014402A (ja) 2004-06-22 2006-01-12 Toshiba Mitsubishi-Electric Industrial System Corp 電力変換装置の過電流保護装置
JP2011078235A (ja) * 2009-09-30 2011-04-14 Fujitsu Ten Ltd 過電流保護回路及び車載用表示装置
CN201781415U (zh) * 2010-03-19 2011-03-30 康佳集团股份有限公司 一种短路和过流保护的直流稳压电路
CN102315757B (zh) * 2010-07-07 2014-07-09 台达能源技术（上海）有限公司 驱动功率开关元件的驱动器
CN102122881B (zh) * 2011-02-21 2013-02-13 北京科诺伟业科技有限公司 一种应用于风力发电的大功率igbt驱动保护电路
JP5776658B2 (ja) * 2012-09-24 2015-09-09 トヨタ自動車株式会社 半導体駆動装置
US10283959B2 (en) 2014-08-01 2019-05-07 International Business Machines Corporation ESD state-controlled semiconductor-controlled rectifier
WO2016114416A1 (ko) * 2015-01-13 2016-07-21 주식회사 실리콘웍스 클램핑 회로에 대한 밸런싱 회로를 포함하는 인덕티브 로드 구동 회로 및 그 제어 방법
CN105958847A (zh) * 2016-06-12 2016-09-21 成都飞凯瑞科技有限公司 一种基于过压过流保护电路的集成稳压式恒流电源
JP6992696B2 (ja) * 2018-07-26 2022-01-13 オムロン株式会社 スイッチ回路及び電力変換装置
US12212132B2 (en) * 2019-09-12 2025-01-28 Omron Corporation Overcurrent protection circuit for protecting overcurrent flowing through switching element and switching circuit with the overcurent protection circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004533713A (ja) 2001-03-16 2004-11-04 サーノフ コーポレイション 混成した超低電圧電源を備えた、高速技術のための静電放電保護構造
US20130279053A1 (en) 2012-04-24 2013-10-24 Hans-Martin Ritter Protection circuit
JP2020127267A (ja) 2019-02-01 2020-08-20 オムロン株式会社 過電流保護回路及びスイッチング回路

Also Published As

Publication number Publication date
EP4210225A1 (en) 2023-07-12
CN115885474A (zh) 2023-03-31
JP2022041671A (ja) 2022-03-11
US12301221B2 (en) 2025-05-13
US20230308088A1 (en) 2023-09-28
EP4210225A4 (en) 2024-09-25
WO2022050040A1 (ja) 2022-03-10

Similar Documents

Publication Publication Date Title
US9019001B2 (en) Gate driver for enhancement-mode and depletion-mode wide bandgap semiconductor JFETs
US9698654B2 (en) Soft shutdown for isolated drivers
US11545972B2 (en) Overcurrent protection circuit for switching element turned on and off based on control voltage
JP2669117B2 (ja) 電圧駆動形半導体素子の駆動回路
US8729875B2 (en) Current zero crossing detector in a dimmer circuit
JP6461950B2 (ja) オープン出力保護を備えるドライバ
JP2018011467A (ja) 半導体スイッチング素子のゲート駆動回路
JP6122542B1 (ja) アクティブクランプ回路
JP7205636B2 (ja) 過電流保護回路及びスイッチング回路
JP7547874B2 (ja) 過電流保護回路及びスイッチング回路
JP2017224999A (ja) 半導体スイッチング素子の保護回路
CN112534668A (zh) 升压转换器短路保护
JP2004312907A (ja) 電力用半導体素子のゲート駆動回路
JP2973997B2 (ja) 電圧駆動形半導体素子の駆動回路
JP2006014402A (ja) 電力変換装置の過電流保護装置
CN112468131A (zh) 驱动电路和驱动装置
JP7572984B2 (ja) スイッチング電源装置
JP3918778B2 (ja) 保護回路
CN112204865A (zh) 金属氧化物半导体场效应晶体管的驱控

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20201127

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210817

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230220

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230707

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240702

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240709

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240730

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240812

R150 Certificate of patent or registration of utility model

Ref document number: 7547874

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150