JP2022037368A - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- JP2022037368A JP2022037368A JP2020141463A JP2020141463A JP2022037368A JP 2022037368 A JP2022037368 A JP 2022037368A JP 2020141463 A JP2020141463 A JP 2020141463A JP 2020141463 A JP2020141463 A JP 2020141463A JP 2022037368 A JP2022037368 A JP 2022037368A
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- film
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 114
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000012535 impurity Substances 0.000 claims abstract description 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 113
- 229920005591 polysilicon Polymers 0.000 claims description 113
- 238000000137 annealing Methods 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 abstract description 26
- 239000010408 film Substances 0.000 description 164
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
10 半導体基板
11 対向電極
12、14 ポリシリコン膜
13 容量絶縁膜
15 第1のポリシリコン膜
16 第2のポリシリコン膜
Claims (7)
- 半導体基板と、
前記半導体基板の1の面から内部に向かって伸長するように形成されたトレンチの内壁表面を覆い且つ前記内壁表面から連続して前記半導体基板の前記1の面に延在するように形成され、不純物がドープされた半導体膜と、
前記半導体膜を挟んで前記半導体基板と対向する位置に設けられ、前記半導体基板の前記1の面に延在する第1の部分と、前記第1の部分から連続して前記トレンチを埋めるように延在する第2の部分と、を有する対向電極と、
前記半導体膜と前記対向電極とを絶縁する絶縁膜と、
を有することを特徴とする半導体装置。 - 前記半導体膜は、減圧CVD法を用いて形成されたポリシリコン膜であることを特徴とする請求項1に記載の半導体装置。
- 前記半導体膜は、不純物がドープされた第1のポリシリコン膜とノンドープの第2のポリシリコン膜とを前記トレンチの内壁表面に順に形成したものに熱アニール処理を行って形成されていることを特徴とする請求項1又は2に記載の半導体装置。
- 前記トレンチは、ドライエッチングによって形成されていることを特徴とする請求項1乃至3のいずれか1に記載の半導体装置。
- ドライエッチングにより、半導体基板の1の面から内部に向かって伸長するトレンチを形成するステップと、
不純物がドープされた半導体膜を、前記トレンチの内壁表面を覆い且つ前記内壁表面から連続して前記半導体基板の前記1の面に延在するように形成するステップと、
前記半導体膜の表面に絶縁膜を形成するステップと、
前記半導体基板の前記1の面に延在する第1の部分と、前記第1の部分から連続して前記トレンチを埋めるように延在する第2の部分と、を有する対向電極を前記絶縁膜上に形成するステップと、
を含むことを特徴とする半導体装置の製造方法。 - 前記絶縁膜を形成するステップの後、熱アニール処理を実行するステップをさらに含むことを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記半導体膜を形成するステップは、
不純物がドープされた第1のポリシリコン膜を形成する第1のステップと、
前記第1のポリシリコン膜の表面にノンドープの第2のポリシリコン膜を形成する第2のステップと、
を含むことを特徴とする請求項6に記載の半導体装置の製造方法。
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JP2020141463A JP2022037368A (ja) | 2020-08-25 | 2020-08-25 | 半導体装置及び半導体装置の製造方法 |
US17/401,484 US11961921B2 (en) | 2020-08-25 | 2021-08-13 | Semiconductor device and manufacturing method for semiconductor device |
CN202110960249.7A CN114121904A (zh) | 2020-08-25 | 2021-08-20 | 半导体装置以及半导体装置的制造方法 |
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JP2020141463A JP2022037368A (ja) | 2020-08-25 | 2020-08-25 | 半導体装置及び半導体装置の製造方法 |
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JP2022037368A true JP2022037368A (ja) | 2022-03-09 |
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JP2020141463A Pending JP2022037368A (ja) | 2020-08-25 | 2020-08-25 | 半導体装置及び半導体装置の製造方法 |
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US (1) | US11961921B2 (ja) |
JP (1) | JP2022037368A (ja) |
CN (1) | CN114121904A (ja) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63158869A (ja) * | 1986-12-23 | 1988-07-01 | Oki Electric Ind Co Ltd | 半導体メモリ装置 |
JP2706469B2 (ja) * | 1988-06-01 | 1998-01-28 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US5343062A (en) * | 1992-05-29 | 1994-08-30 | Nippon Steel Corporation | Semiconductor memory having a memory cell including a capacitor with a two-layer lower electrode |
KR100317534B1 (ko) * | 2000-01-05 | 2001-12-24 | 윤종용 | 커패시터 및 그 제조방법 |
JP2005142549A (ja) | 2003-10-15 | 2005-06-02 | Fuji Electric Holdings Co Ltd | 半導体装置の製造方法 |
JP2009141307A (ja) | 2007-11-15 | 2009-06-25 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
US8685828B2 (en) * | 2011-01-14 | 2014-04-01 | Infineon Technologies Ag | Method of forming a capacitor |
US10559650B2 (en) * | 2018-01-23 | 2020-02-11 | Texas Instruments Incorporated | Trench capacitor with warpage reduction |
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2020
- 2020-08-25 JP JP2020141463A patent/JP2022037368A/ja active Pending
-
2021
- 2021-08-13 US US17/401,484 patent/US11961921B2/en active Active
- 2021-08-20 CN CN202110960249.7A patent/CN114121904A/zh active Pending
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Publication number | Publication date |
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CN114121904A (zh) | 2022-03-01 |
US20220069140A1 (en) | 2022-03-03 |
US11961921B2 (en) | 2024-04-16 |
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