JP2022027020A - 決定方法、露光方法、露光装置、および物品製造方法 - Google Patents

決定方法、露光方法、露光装置、および物品製造方法 Download PDF

Info

Publication number
JP2022027020A
JP2022027020A JP2020130775A JP2020130775A JP2022027020A JP 2022027020 A JP2022027020 A JP 2022027020A JP 2020130775 A JP2020130775 A JP 2020130775A JP 2020130775 A JP2020130775 A JP 2020130775A JP 2022027020 A JP2022027020 A JP 2022027020A
Authority
JP
Japan
Prior art keywords
mark
image
region
shot
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2020130775A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022027020A5 (ja
Inventor
渉 木島
Wataru Kijima
瞭 早迫
Ryo Sosako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2020130775A priority Critical patent/JP2022027020A/ja
Priority to TW110122935A priority patent/TW202207276A/zh
Priority to KR1020210094009A priority patent/KR20220015938A/ko
Priority to CN202110847292.2A priority patent/CN114063393A/zh
Publication of JP2022027020A publication Critical patent/JP2022027020A/ja
Publication of JP2022027020A5 publication Critical patent/JP2022027020A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2020130775A 2020-07-31 2020-07-31 決定方法、露光方法、露光装置、および物品製造方法 Withdrawn JP2022027020A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020130775A JP2022027020A (ja) 2020-07-31 2020-07-31 決定方法、露光方法、露光装置、および物品製造方法
TW110122935A TW202207276A (zh) 2020-07-31 2021-06-23 調整方法、曝光方法、曝光裝置及物品製造方法
KR1020210094009A KR20220015938A (ko) 2020-07-31 2021-07-19 조정 방법, 노광 방법, 노광 장치, 및 물품제조방법
CN202110847292.2A CN114063393A (zh) 2020-07-31 2021-07-27 调整方法、曝光方法、曝光装置以及物品制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020130775A JP2022027020A (ja) 2020-07-31 2020-07-31 決定方法、露光方法、露光装置、および物品製造方法

Publications (2)

Publication Number Publication Date
JP2022027020A true JP2022027020A (ja) 2022-02-10
JP2022027020A5 JP2022027020A5 (ja) 2023-08-02

Family

ID=80233367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020130775A Withdrawn JP2022027020A (ja) 2020-07-31 2020-07-31 決定方法、露光方法、露光装置、および物品製造方法

Country Status (4)

Country Link
JP (1) JP2022027020A (zh)
KR (1) KR20220015938A (zh)
CN (1) CN114063393A (zh)
TW (1) TW202207276A (zh)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7240166B2 (ja) 2018-12-18 2023-03-15 キヤノン株式会社 決定方法、露光方法、露光装置、および物品製造方法

Also Published As

Publication number Publication date
CN114063393A (zh) 2022-02-18
TW202207276A (zh) 2022-02-16
KR20220015938A (ko) 2022-02-08

Similar Documents

Publication Publication Date Title
KR101144683B1 (ko) 사전 계측 처리 방법, 노광 시스템 및 기판 처리 장치
JP6755733B2 (ja) マスク、計測方法、露光方法、及び、物品製造方法
KR20010042133A (ko) 노광방법, 노광장치, 포토마스크, 포토마스크의 제조방법,마이크로디바이스, 및 마이크로디바이스의 제조방법
JP2011060919A (ja) 露光装置およびデバイス製造方法
JP2009200105A (ja) 露光装置
JP2008263194A (ja) 露光装置、露光方法、および電子デバイス製造方法
JP6261207B2 (ja) 露光装置、露光方法、それらを用いたデバイスの製造方法
JP3595707B2 (ja) 露光装置および露光方法
JP2007096069A (ja) 位置合わせ方法、重ね合わせ精度計測方法、露光方法、位置合わせ装置、露光装置、及び重ね合わせ精度計測装置
CN111338186B (zh) 决定方法、曝光方法、曝光装置以及物品制造方法
KR101320240B1 (ko) 파면수차 측정 장치, 노광 장치 및 디바이스 제조 방법
JPH113856A (ja) 投影露光方法及び投影露光装置
TWI710792B (zh) 投影光學系統、曝光裝置及物品之製造方法
JP5554906B2 (ja) 露光装置のアライメント方法
JP7054365B2 (ja) 評価方法、露光方法、および物品製造方法
JP6399739B2 (ja) 露光装置、露光方法、およびデバイスの製造方法
JP2022027020A (ja) 決定方法、露光方法、露光装置、および物品製造方法
JP3715751B2 (ja) 残存収差補正板及びそれを用いた投影露光装置
JP2006030021A (ja) 位置検出装置及び位置検出方法
JP2009170559A (ja) 露光装置およびデバイス製造方法
JP2021179572A (ja) 評価方法、露光方法、および物品製造方法
TW202331423A (zh) 曝光方法、曝光裝置及物品之製造方法
JP2004029372A (ja) マスク、結像特性計測方法、露光方法、及びデバイス製造方法
CN114442422A (zh) 图形失真的补偿方法及光刻曝光的方法
JP2009038264A (ja) 露光装置およびデバイス製造方法

Legal Events

Date Code Title Description
RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20210103

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210113

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230724

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230724

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20240208