JP2022012739A - ガスセンサ装置 - Google Patents
ガスセンサ装置 Download PDFInfo
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- JP2022012739A JP2022012739A JP2020114790A JP2020114790A JP2022012739A JP 2022012739 A JP2022012739 A JP 2022012739A JP 2020114790 A JP2020114790 A JP 2020114790A JP 2020114790 A JP2020114790 A JP 2020114790A JP 2022012739 A JP2022012739 A JP 2022012739A
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- 239000007789 gas Substances 0.000 claims abstract description 117
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 54
- 239000001257 hydrogen Substances 0.000 claims abstract description 48
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 48
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 26
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 26
- 206010021143 Hypoxia Diseases 0.000 claims abstract description 6
- 239000012528 membrane Substances 0.000 claims description 20
- 230000008859 change Effects 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 2
- 229910002668 Pd-Cu Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000005192 partition Methods 0.000 claims description 2
- 239000012466 permeate Substances 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 107
- 239000011229 interlayer Substances 0.000 description 28
- 238000004544 sputter deposition Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910003070 TaOx Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001471 micro-filtration Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M3/00—Investigating fluid-tightness of structures
- G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
- G01M3/04—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/128—Microapparatus
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
- G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
- G01N33/005—H2
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Medicinal Chemistry (AREA)
- Food Science & Technology (AREA)
- Combustion & Propulsion (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
図1に示すように、ガスセンサ装置100は、基板1と、基板1上に配置された絶縁膜2と、絶縁膜2の上方に配置された第1の電極3と、第2の電極6と、第1の電極3および第2の電極6で挟まれた気体感応性抵抗膜4と、層間絶縁膜7と、ビア8と、配線導体9と、水素透過膜10と、を備えている。
次に、ガスセンサ装置100の製造方法の一例について説明する。
以上のガスセンサ装置100によれば、気体接触部6aを水素透過膜10で覆っているため、気体接触部6aに水分が接触することを防止しつつ、検査対象である水素のみを接触させることができる。したがって、高湿環境下においてガスセンサ装置100の耐湿性能を向上させることができる。特に、第1の被覆部10aを第2の被覆部10bよりも薄くしているため、層間絶縁膜7の防湿性能を確保することができ、かつ、より速いガス応答性を有するガスセンサ装置100を提供することができる。
2,102 絶縁膜
3,103 第1の電極
4,104 気体感応性抵抗膜
5,105 局所領域
6,106 第2の電極
6a 気体接触部
7,107 層間絶縁膜
7a,107a 開口部
7b 上面
7c 側壁部
8 ビア
9 配線導体
10 水素透過膜
10a 第1の被覆部
10b 第2の被覆部
10c 第3の被覆部
100 ガスセンサ装置
Claims (5)
- 第1の電極と、
第2の電極と、
前記第1の電極と前記第2の電極との間に配置され、前記第1の電極および前記第2の電極に接する金属酸化物層と、
前記第1の電極の一部、前記第2の電極の一部および前記金属酸化物層の一部を覆う被覆絶縁膜と、
水素のみを透過する水素透過膜と、を備え、
前記金属酸化物層の内部には、前記第2の電極と接する局所領域であって、前記金属酸化物層における他の領域よりも酸素不足度が大きい前記局所領域が設けられ、
前記被覆絶縁膜には、前記第2の電極の主面の一部である気体接触部を露出させる開口部が設けられ、
前記水素透過膜は、少なくとも前記気体接触部を覆うように設けられている、ガスセンサ装置。 - 前記水素透過膜は、前記気体接触部を覆う第1の被覆部と、前記開口部を区画する側壁部を覆う第2の被覆部と、を備え、
前記第1の被覆部は、前記第2の被覆部よりも薄く形成されている、請求項1に記載のガスセンサ装置。 - 前記水素透過膜の厚さは、10nm以上100nm以下である、請求項1または2に記載のガスセンサ装置。
- 前記水素透過膜は、Pd、Pd合金、Pd-Cu合金、TiNから選択される少なくとも1つを含む請求項1から3のいずれか一項に記載のガスセンサ装置。
- 前記第2の電極の前記気体接触部に水素含有ガスが接触したことに伴う前記金属酸化物層に流れる電流値の変化を測定する測定回路をさらに備える、請求項1から4のいずれか一項に記載のガスセンサ装置。
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JP2020114790A JP7486123B2 (ja) | 2020-07-02 | 2020-07-02 | ガスセンサ装置 |
US17/354,925 US11692958B2 (en) | 2020-07-02 | 2021-06-22 | Gas sensor device |
CN202110707483.9A CN113884547A (zh) | 2020-07-02 | 2021-06-24 | 气体传感器装置 |
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JP2020114790A JP7486123B2 (ja) | 2020-07-02 | 2020-07-02 | ガスセンサ装置 |
Publications (2)
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JP2022012739A true JP2022012739A (ja) | 2022-01-17 |
JP7486123B2 JP7486123B2 (ja) | 2024-05-17 |
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JP2020114790A Active JP7486123B2 (ja) | 2020-07-02 | 2020-07-02 | ガスセンサ装置 |
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US (1) | US11692958B2 (ja) |
JP (1) | JP7486123B2 (ja) |
CN (1) | CN113884547A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023017748A1 (ja) * | 2021-08-11 | 2023-02-16 | ヌヴォトンテクノロジージャパン株式会社 | 水素センサ |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3509510B2 (ja) * | 1997-11-05 | 2004-03-22 | セイコーエプソン株式会社 | 半導体装置およびその製造方法 |
US6265222B1 (en) | 1999-01-15 | 2001-07-24 | Dimeo, Jr. Frank | Micro-machined thin film hydrogen gas sensor, and method of making and using the same |
JP2000298108A (ja) * | 1999-04-13 | 2000-10-24 | Osaka Gas Co Ltd | ガスセンサ |
JP2003142579A (ja) * | 2001-11-07 | 2003-05-16 | Hitachi Ltd | 半導体装置の製造方法および半導体装置 |
JP2005012016A (ja) | 2003-06-19 | 2005-01-13 | Semiconductor Leading Edge Technologies Inc | 半導体装置及び半導体装置の製造方法 |
JP4056987B2 (ja) * | 2004-04-28 | 2008-03-05 | アルプス電気株式会社 | 水素センサ及び水素の検知方法 |
JP4910493B2 (ja) | 2006-06-16 | 2012-04-04 | カシオ計算機株式会社 | 水素センサ、発電装置及び電子機器 |
WO2008149972A1 (ja) | 2007-06-08 | 2008-12-11 | Mikuni Corporation | 水素センサー、及びその製造方法 |
JP5366235B2 (ja) * | 2008-01-28 | 2013-12-11 | 東京エレクトロン株式会社 | 半導体装置の製造方法、半導体製造装置及び記憶媒体 |
JP2011043410A (ja) * | 2009-08-21 | 2011-03-03 | Gunze Ltd | 水素ガスセンサ |
JP2011061005A (ja) * | 2009-09-10 | 2011-03-24 | Sony Corp | 電子デバイス |
JP2015036797A (ja) * | 2013-08-15 | 2015-02-23 | ソニー株式会社 | 表示装置および電子機器 |
EP3343212B1 (en) | 2015-08-28 | 2019-11-06 | Panasonic Intellectual Property Management Co., Ltd. | Gas sensor and fuel cell vehicle |
JP6761764B2 (ja) | 2016-03-18 | 2020-09-30 | パナソニックセミコンダクターソリューションズ株式会社 | 水素センサ及び燃料電池自動車、並びに水素検出方法 |
CN107315034B (zh) * | 2016-04-26 | 2021-06-08 | 新唐科技日本株式会社 | 气体检测装置以及氢检测方法 |
JP6685839B2 (ja) * | 2016-05-30 | 2020-04-22 | 株式会社東芝 | ガス検出装置 |
JP6708184B2 (ja) * | 2017-08-22 | 2020-06-10 | 株式会社デンソー | ガスセンサ素子及びガスセンサ |
-
2020
- 2020-07-02 JP JP2020114790A patent/JP7486123B2/ja active Active
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2021
- 2021-06-22 US US17/354,925 patent/US11692958B2/en active Active
- 2021-06-24 CN CN202110707483.9A patent/CN113884547A/zh active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2023017748A1 (ja) * | 2021-08-11 | 2023-02-16 | ヌヴォトンテクノロジージャパン株式会社 | 水素センサ |
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US11692958B2 (en) | 2023-07-04 |
US20220003706A1 (en) | 2022-01-06 |
CN113884547A (zh) | 2022-01-04 |
JP7486123B2 (ja) | 2024-05-17 |
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