JP2021536623A5 - - Google Patents
Info
- Publication number
- JP2021536623A5 JP2021536623A5 JP2021510952A JP2021510952A JP2021536623A5 JP 2021536623 A5 JP2021536623 A5 JP 2021536623A5 JP 2021510952 A JP2021510952 A JP 2021510952A JP 2021510952 A JP2021510952 A JP 2021510952A JP 2021536623 A5 JP2021536623 A5 JP 2021536623A5
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- memory cells
- array
- flash memory
- temperature compensation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862723398P | 2018-08-27 | 2018-08-27 | |
| US62/723,398 | 2018-08-27 | ||
| US16/183,250 | 2018-11-07 | ||
| US16/183,250 US10755783B2 (en) | 2018-08-27 | 2018-11-07 | Temperature and leakage compensation for memory cells in an analog neural memory system used in a deep learning neural network |
| PCT/US2019/043101 WO2020046495A1 (en) | 2018-08-27 | 2019-07-23 | Temperature and leakage compensation for memory cells in an analog neural memory system used in a deep learning neural network |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021536623A JP2021536623A (ja) | 2021-12-27 |
| JP2021536623A5 true JP2021536623A5 (https=) | 2022-08-01 |
| JP7281535B2 JP7281535B2 (ja) | 2023-05-25 |
Family
ID=69586480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021510952A Active JP7281535B2 (ja) | 2018-08-27 | 2019-07-23 | 深層学習ニューラルネットワークで使用されるアナログニューラルメモリシステムのメモリセルに対する温度補償及び漏れ補償 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US10755783B2 (https=) |
| EP (2) | EP4138079B1 (https=) |
| JP (1) | JP7281535B2 (https=) |
| KR (1) | KR102457394B1 (https=) |
| CN (1) | CN112602095B (https=) |
| TW (1) | TWI754162B (https=) |
| WO (1) | WO2020046495A1 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10755783B2 (en) * | 2018-08-27 | 2020-08-25 | Silicon Storage Technology | Temperature and leakage compensation for memory cells in an analog neural memory system used in a deep learning neural network |
| US11513797B2 (en) * | 2018-09-12 | 2022-11-29 | Mentium Technologies Inc. | Systems and methods for analog vector by matrix multiplier |
| JP7196803B2 (ja) * | 2018-10-18 | 2022-12-27 | 株式会社デンソー | 人工ニューラルネットワーク回路及び人工ニューラルネットワーク回路における学習値切替方法 |
| US11507641B2 (en) * | 2019-05-31 | 2022-11-22 | Advanced Micro Devices, Inc. | Temperature-based adjustments for in-memory matrix multiplication |
| US11074976B2 (en) * | 2019-08-26 | 2021-07-27 | Sandisk Technologies Llc | Temperature dependent impedance mitigation in non-volatile memory |
| US11875852B2 (en) * | 2020-07-06 | 2024-01-16 | Silicon Storage Technology, Inc. | Adaptive bias decoder to provide a voltage to a control gate line in an analog neural memory array in artificial neural network |
| US11809838B2 (en) * | 2020-09-08 | 2023-11-07 | Macronix International Co., Ltd. | Memory device and operation method thereof |
| US12106070B2 (en) * | 2020-09-08 | 2024-10-01 | Macronix International Co., Ltd. | Memory device and operation method thereof |
| US11630002B2 (en) * | 2021-02-08 | 2023-04-18 | Macronix International Co., Ltd. | Method for sensing temperature in memory die, memory die and memory with temperature sensing function |
| KR102553403B1 (ko) * | 2021-02-23 | 2023-07-11 | 한국과학기술원 | 우수한 선형성 특성을 갖는 뉴로모픽 시냅스 소자 및 그 동작 방법 |
| US12572786B2 (en) | 2021-03-31 | 2026-03-10 | International Business Machines Corporation | NVM-based high-capacity neural network inference engine |
| US11521694B2 (en) * | 2021-05-04 | 2022-12-06 | Micron Technology, Inc. | Adjustment to trim settings based on a use of a memory device |
| US11380373B1 (en) * | 2021-05-12 | 2022-07-05 | Globalfoundries U.S. Inc. | Memory with read circuit for current-to-voltage slope characteristic-based sensing and method |
| US12579422B2 (en) * | 2021-08-02 | 2026-03-17 | Silicon Storage Technology, Inc. | Input circuitry for analog neural memory in a deep learning artificial neural network |
| US11989440B2 (en) * | 2021-08-11 | 2024-05-21 | Silicon Storage Technology, Inc. | Hybrid memory system configurable to store neural memory weight data in analog form or digital form |
| JP7733233B2 (ja) * | 2021-11-12 | 2025-09-02 | シリコン ストーリッジ テクノロージー インコーポレイテッド | ニューラルネットワークにおける１つ以上のメモリセルに印加するためのバイアス電圧の決定 |
| US20230306246A1 (en) * | 2022-02-08 | 2023-09-28 | Silicon Storage Technology, Inc. | Calibration of electrical parameters in a deep learning artificial neural network |
| US11716089B1 (en) * | 2022-03-16 | 2023-08-01 | Xilinx, Inc. | Delay-tracking biasing for voltage-to-time conversion |
| TWI852248B (zh) * | 2022-12-29 | 2024-08-11 | 大陸商合肥創發微電子有限公司 | 動態溫度補償之方法及其系統 |
| US11955193B1 (en) * | 2023-12-05 | 2024-04-09 | Aspinity, Inc. | Compute-in-memory array multi-range temperature compensation |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3668440A (en) | 1970-10-16 | 1972-06-06 | Motorola Inc | Temperature stable monolithic multiplier circuit |
| US5029130A (en) | 1990-01-22 | 1991-07-02 | Silicon Storage Technology, Inc. | Single transistor non-valatile electrically alterable semiconductor memory device |
| US6359499B1 (en) | 2000-06-23 | 2002-03-19 | Marvell International Ltd. | Temperature and process independent CMOS circuit |
| US6560152B1 (en) * | 2001-11-02 | 2003-05-06 | Sandisk Corporation | Non-volatile memory with temperature-compensated data read |
| US6747310B2 (en) | 2002-10-07 | 2004-06-08 | Actrans System Inc. | Flash memory cells with separated self-aligned select and erase gates, and process of fabrication |
| JP2007059024A (ja) * | 2005-08-26 | 2007-03-08 | Micron Technol Inc | 温度補償された読み出し・検証動作をフラッシュ・メモリにおいて生成するための方法及び装置 |
| JP2007164960A (ja) * | 2005-11-15 | 2007-06-28 | Nec Electronics Corp | 半導体集積回路装置 |
| US8102201B2 (en) * | 2006-09-25 | 2012-01-24 | Analog Devices, Inc. | Reference circuit and method for providing a reference |
| ITRM20060652A1 (it) * | 2006-12-06 | 2008-06-07 | Micron Technology Inc | Compensazione di temperatura di segnali di memoria impiegando segnali digitali |
| US7889575B2 (en) * | 2008-09-22 | 2011-02-15 | Sandisk Corporation | On-chip bias voltage temperature coefficient self-calibration mechanism |
| KR101868332B1 (ko) * | 2010-11-25 | 2018-06-20 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것을 포함한 데이터 저장 장치 |
| CN102684683B (zh) * | 2012-05-14 | 2014-07-02 | 常熟银海集成电路有限公司 | 任意项全系数高精度温度补偿晶体振荡器 |
| US8873316B2 (en) * | 2012-07-25 | 2014-10-28 | Freescale Semiconductor, Inc. | Methods and systems for adjusting NVM cell bias conditions based upon operating temperature to reduce performance degradation |
| KR102215204B1 (ko) * | 2013-11-29 | 2021-02-16 | 삼성디스플레이 주식회사 | 표시 장치, 그 보상 데이터 산출 방법 및 그 구동 방법 |
| US9330790B2 (en) * | 2014-04-25 | 2016-05-03 | Seagate Technology Llc | Temperature tracking to manage threshold voltages in a memory |
| DE102015112276B3 (de) * | 2015-07-28 | 2016-06-30 | Océ Printing Systems GmbH & Co. KG | Verfahren und Vorrichtung zur Verbesserung des Tonertransfers in einem elektrographischen Digitaldrucker |
| US9899450B2 (en) * | 2015-09-15 | 2018-02-20 | The Regents Of The University Of California | Memristors and method for fabricating memristors |
| US10564900B2 (en) * | 2016-03-04 | 2020-02-18 | Western Digital Technologies, Inc. | Temperature variation compensation |
| CN107533668B (zh) * | 2016-03-11 | 2021-01-26 | 慧与发展有限责任合伙企业 | 用于计算神经网络的节点值的硬件加速器和方法 |
| KR102182583B1 (ko) | 2016-05-17 | 2020-11-24 | 실리콘 스토리지 테크놀로지 인크 | 비휘발성 메모리 어레이를 사용하는 딥러닝 신경망 분류기 |
| US10269440B2 (en) * | 2016-05-17 | 2019-04-23 | Silicon Storage Technology, Inc. | Flash memory array with individual memory cell read, program and erase |
| WO2018150295A1 (ja) * | 2017-02-15 | 2018-08-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10748630B2 (en) | 2017-11-29 | 2020-08-18 | Silicon Storage Technology, Inc. | High precision and highly efficient tuning mechanisms and algorithms for analog neuromorphic memory in artificial neural networks |
| US11443175B2 (en) * | 2018-07-11 | 2022-09-13 | Silicon Storage Technology, Inc. | Compensation for reference transistors and memory cells in analog neuro memory in deep learning artificial neural network |
| US10528643B1 (en) * | 2018-08-01 | 2020-01-07 | Sandisk Technologies Llc | Vector-matrix multiplication using non-volatile memory cells |
| US10755783B2 (en) * | 2018-08-27 | 2020-08-25 | Silicon Storage Technology | Temperature and leakage compensation for memory cells in an analog neural memory system used in a deep learning neural network |
-
2018
- 2018-11-07 US US16/183,250 patent/US10755783B2/en active Active
-
2019
- 2019-07-23 WO PCT/US2019/043101 patent/WO2020046495A1/en not_active Ceased
- 2019-07-23 JP JP2021510952A patent/JP7281535B2/ja active Active
- 2019-07-23 CN CN201980055114.7A patent/CN112602095B/zh active Active
- 2019-07-23 EP EP22201333.6A patent/EP4138079B1/en active Active
- 2019-07-23 KR KR1020217007006A patent/KR102457394B1/ko active Active
- 2019-07-23 EP EP19790890.8A patent/EP3844680B1/en active Active
- 2019-08-20 TW TW108129667A patent/TWI754162B/zh active
-
2020
- 2020-07-16 US US16/930,777 patent/US11158374B2/en active Active
- 2020-11-11 US US17/095,661 patent/US11521682B2/en active Active
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