CN112602095B - 用于深度学习神经网络中使用的模拟神经存储器系统中的存储器单元的温度和泄漏补偿 - Google Patents

用于深度学习神经网络中使用的模拟神经存储器系统中的存储器单元的温度和泄漏补偿 Download PDF

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CN112602095B
CN112602095B CN201980055114.7A CN201980055114A CN112602095B CN 112602095 B CN112602095 B CN 112602095B CN 201980055114 A CN201980055114 A CN 201980055114A CN 112602095 B CN112602095 B CN 112602095B
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memory cell
array
flash memory
voltage
memory cells
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CN112602095A (zh
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H·V·特兰
V·蒂瓦里
M·雷顿
N·多
S·莱姆克
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Silicon Storage Technology Inc
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    • G—PHYSICS
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    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
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    • G11C16/00—Erasable programmable read-only memories
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    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
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    • G11—INFORMATION STORAGE
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    • G11C16/00—Erasable programmable read-only memories
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    • G11C16/26—Sensing or reading circuits; Data output circuits
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    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
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    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/04—Nonvolatile memory cell provided with a separate control gate for erasing the cells, i.e. erase gate, independent of the normal read control gate

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CN201980055114.7A 2018-08-27 2019-07-23 用于深度学习神经网络中使用的模拟神经存储器系统中的存储器单元的温度和泄漏补偿 Active CN112602095B (zh)

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US201862723398P 2018-08-27 2018-08-27
US62/723,398 2018-08-27
US16/183,250 2018-11-07
US16/183,250 US10755783B2 (en) 2018-08-27 2018-11-07 Temperature and leakage compensation for memory cells in an analog neural memory system used in a deep learning neural network
PCT/US2019/043101 WO2020046495A1 (en) 2018-08-27 2019-07-23 Temperature and leakage compensation for memory cells in an analog neural memory system used in a deep learning neural network

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CN112602095B true CN112602095B (zh) 2022-05-27

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US12579422B2 (en) * 2021-08-02 2026-03-17 Silicon Storage Technology, Inc. Input circuitry for analog neural memory in a deep learning artificial neural network
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US20210090654A1 (en) 2021-03-25
JP2021536623A (ja) 2021-12-27
EP3844680A1 (en) 2021-07-07
US11521682B2 (en) 2022-12-06
WO2020046495A1 (en) 2020-03-05
TW202026955A (zh) 2020-07-16
US10755783B2 (en) 2020-08-25
KR102457394B1 (ko) 2022-10-21
US20200350015A1 (en) 2020-11-05
TWI754162B (zh) 2022-02-01
EP3844680B1 (en) 2022-11-23
CN112602095A (zh) 2021-04-02
US11158374B2 (en) 2021-10-26
EP4138079B1 (en) 2024-08-28
JP7281535B2 (ja) 2023-05-25
KR20210032538A (ko) 2021-03-24
US20200066345A1 (en) 2020-02-27

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