JP2021533576A - 光電子部品及び光電子部品を製造するための方法 - Google Patents

光電子部品及び光電子部品を製造するための方法 Download PDF

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JP2021533576A
JP2021533576A JP2021507987A JP2021507987A JP2021533576A JP 2021533576 A JP2021533576 A JP 2021533576A JP 2021507987 A JP2021507987 A JP 2021507987A JP 2021507987 A JP2021507987 A JP 2021507987A JP 2021533576 A JP2021533576 A JP 2021533576A
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substituted
alkoxy
conversion layer
optoelectronic component
group
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JP2021533576A5 (enExample
Inventor
アラン ピケット
マキシム エヌ. チョウル
ダルシャン クンダリヤ
アダム スコッチ
ゲルトルート クラウター
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • HELECTRICITY
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    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
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    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
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    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
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    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
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    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/77748Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
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    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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    • H10H20/01Manufacture or treatment
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    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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    • H10H20/80Constructional details
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    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
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    • H10H20/80Constructional details
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    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
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  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
JP2021507987A 2018-08-17 2019-08-07 光電子部品及び光電子部品を製造するための方法 Pending JP2021533576A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/104,743 US11552228B2 (en) 2018-08-17 2018-08-17 Optoelectronic component and method for producing an optoelectronic component
US16/104,743 2018-08-17
PCT/EP2019/071202 WO2020035363A1 (en) 2018-08-17 2019-08-07 Optoelectronic component and method for producing an optoelectronic component

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Publication Number Publication Date
JP2021533576A true JP2021533576A (ja) 2021-12-02
JP2021533576A5 JP2021533576A5 (enExample) 2022-01-11

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US (1) US11552228B2 (enExample)
JP (1) JP2021533576A (enExample)
KR (1) KR102520089B1 (enExample)
DE (1) DE112019004137T5 (enExample)
WO (1) WO2020035363A1 (enExample)

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DE102019129327A1 (de) * 2019-10-30 2021-05-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines optoelektronischen halbleiterbauelements und optoelektronisches halbleiterbauelement
US12142622B2 (en) * 2020-08-17 2024-11-12 Au Optronics Corporation Sensing device
KR102877541B1 (ko) 2021-04-30 2025-10-29 삼성디스플레이 주식회사 표시 장치
DE102021117858A1 (de) * 2021-07-09 2023-01-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische leuchtvorrichtung
DE102021131112A1 (de) 2021-11-26 2023-06-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes bauelement und verfahren zur herstellung eines strahlungsemittierenden bauelements
US20230265337A1 (en) * 2022-02-22 2023-08-24 Ams-Osram International Gmbh Converter element, method for producing a converter element and radiation emitting device
DE102023108968A1 (de) * 2023-04-06 2024-10-10 Ams-Osram International Gmbh Verfahren zum prozessieren von optoelektronischen bauelementen und optoelektronisches bauelement
KR102705004B1 (ko) 2024-04-23 2024-09-09 지니지 주식회사 엑소좀 복합체를 포함하는 인텐시브 화이트닝 및 피부 개선용 화장료 조성물

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JP2009076749A (ja) * 2007-09-21 2009-04-09 Toyoda Gosei Co Ltd Led装置及びその製造方法
WO2010110204A1 (ja) * 2009-03-27 2010-09-30 コニカミノルタオプト株式会社 蛍光体部材、蛍光体部材の製造方法、及び照明装置
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JP2011181429A (ja) * 2010-03-03 2011-09-15 Konica Minolta Opto Inc Led照明装置、led照明装置の製造方法
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