JP2021523559A5 - - Google Patents

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Publication number
JP2021523559A5
JP2021523559A5 JP2020561041A JP2020561041A JP2021523559A5 JP 2021523559 A5 JP2021523559 A5 JP 2021523559A5 JP 2020561041 A JP2020561041 A JP 2020561041A JP 2020561041 A JP2020561041 A JP 2020561041A JP 2021523559 A5 JP2021523559 A5 JP 2021523559A5
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JP
Japan
Prior art keywords
coupled
capacitor
electrode
conductive rod
inductor
Prior art date
Application number
JP2020561041A
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English (en)
Japanese (ja)
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JPWO2019212799A5 (https=
JP2021523559A (ja
JP7408570B2 (ja
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Priority claimed from PCT/US2019/028665 external-priority patent/WO2019212799A1/en
Publication of JP2021523559A publication Critical patent/JP2021523559A/ja
Publication of JPWO2019212799A5 publication Critical patent/JPWO2019212799A5/ja
Publication of JP2021523559A5 publication Critical patent/JP2021523559A5/ja
Priority to JP2023214693A priority Critical patent/JP7761626B2/ja
Application granted granted Critical
Publication of JP7408570B2 publication Critical patent/JP7408570B2/ja
Active legal-status Critical Current
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JP2020561041A 2018-05-03 2019-04-23 ペデスタル用のrf接地構成 Active JP7408570B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023214693A JP7761626B2 (ja) 2018-05-03 2023-12-20 ペデスタル用のrf接地構成

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862666418P 2018-05-03 2018-05-03
US62/666,418 2018-05-03
PCT/US2019/028665 WO2019212799A1 (en) 2018-05-03 2019-04-23 Rf grounding configuration for pedestals

Related Child Applications (1)

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JP2023214693A Division JP7761626B2 (ja) 2018-05-03 2023-12-20 ペデスタル用のrf接地構成

Publications (4)

Publication Number Publication Date
JP2021523559A JP2021523559A (ja) 2021-09-02
JPWO2019212799A5 JPWO2019212799A5 (https=) 2022-05-09
JP2021523559A5 true JP2021523559A5 (https=) 2022-05-09
JP7408570B2 JP7408570B2 (ja) 2024-01-05

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JP2020561041A Active JP7408570B2 (ja) 2018-05-03 2019-04-23 ペデスタル用のrf接地構成
JP2023214693A Active JP7761626B2 (ja) 2018-05-03 2023-12-20 ペデスタル用のrf接地構成

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JP2023214693A Active JP7761626B2 (ja) 2018-05-03 2023-12-20 ペデスタル用のrf接地構成

Country Status (7)

Country Link
US (3) US11569072B2 (https=)
JP (2) JP7408570B2 (https=)
KR (2) KR20250103788A (https=)
CN (3) CN118448237A (https=)
SG (1) SG11202010037QA (https=)
TW (3) TWI906133B (https=)
WO (1) WO2019212799A1 (https=)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11709156B2 (en) 2017-09-18 2023-07-25 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved analytical analysis
US12180581B2 (en) 2017-09-18 2024-12-31 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US11709155B2 (en) 2017-09-18 2023-07-25 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US12181452B2 (en) 2017-09-18 2024-12-31 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
KR102592699B1 (ko) * 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US20220415625A1 (en) * 2019-12-06 2022-12-29 Lam Research Corporation Substrate supports with integrated rf filters
US11918936B2 (en) 2020-01-17 2024-03-05 Waters Technologies Corporation Performance and dynamic range for oligonucleotide bioanalysis through reduction of non specific binding
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US12352734B2 (en) 2020-09-24 2025-07-08 Waters Technologies Corporation Chromatographic hardware improvements for separation of reactive molecules
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
KR102427905B1 (ko) * 2020-12-21 2022-08-02 주식회사 테스 기판처리장치
CN114695051B (zh) * 2020-12-31 2025-02-21 拓荆科技股份有限公司 半导体处理设备及方法
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
KR102919153B1 (ko) * 2021-06-21 2026-01-27 어플라이드 머티어리얼스, 인코포레이티드 프로세스 챔버들의 라디오 주파수 전극 임피던스들을 제어하기 위한 방법들 및 장치
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
CN118073160B (zh) * 2022-11-23 2025-09-16 北京北方华创微电子装备有限公司 射频功率的馈入结构及半导体工艺设备
US20240186123A1 (en) * 2022-12-02 2024-06-06 Applied Materials, Inc. Heated Pedestal With Impedance Matching Radio Frequency (RF) Rod
US20250062104A1 (en) * 2023-08-16 2025-02-20 Applied Materials, Inc. Heated pedestal with low impedance rf rod

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2685610B2 (ja) * 1989-12-07 1997-12-03 東京エレクトロン株式会社 プラズマ処理装置
US6063234A (en) * 1997-09-10 2000-05-16 Lam Research Corporation Temperature sensing system for use in a radio frequency environment
JP2000349579A (ja) * 1999-06-08 2000-12-15 Zanden Audio Syst:Kk デジタルオーディオ用帯域制限アナログフィルタ及びこれを用いた音声信号増幅装置
JP4456694B2 (ja) 1999-06-22 2010-04-28 東京エレクトロン株式会社 プラズマ処理装置
US6922324B1 (en) * 2000-07-10 2005-07-26 Christopher M. Horwitz Remote powering of electrostatic chucks
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor
JP2003143028A (ja) * 2001-11-01 2003-05-16 Sharp Corp 低雑音コンバータ
US6975841B2 (en) * 2001-11-12 2005-12-13 Matsushita Electric Industrial Co., Ltd. Diplexer, and high-frequency switch and antenna duplexer using the same
JP4515755B2 (ja) * 2003-12-24 2010-08-04 東京エレクトロン株式会社 処理装置
WO2005087974A2 (en) 2004-03-05 2005-09-22 Applied Materials, Inc. Cvd processes for the deposition of amorphous carbon films
US7109114B2 (en) 2004-05-07 2006-09-19 Applied Materials, Inc. HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
TW200631095A (en) * 2005-01-27 2006-09-01 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
US7312162B2 (en) 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7790634B2 (en) 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US7750645B2 (en) 2007-08-15 2010-07-06 Applied Materials, Inc. Method of wafer level transient sensing, threshold comparison and arc flag generation/deactivation
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
TWI350655B (en) * 2008-03-20 2011-10-11 Ind Tech Res Inst Circuit device with inductor and capacitor in parallel connection
US8734664B2 (en) 2008-07-23 2014-05-27 Applied Materials, Inc. Method of differential counter electrode tuning in an RF plasma reactor
US20140069584A1 (en) * 2008-07-23 2014-03-13 Applied Materials, Inc. Differential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode
JP2010220139A (ja) * 2009-03-19 2010-09-30 Fujitsu Ltd フィルタ、フィルタリング方法、および通信装置
US8901015B2 (en) 2012-02-15 2014-12-02 Applied Materials, Inc. Method for depositing an inorganic encapsulating film
JP6027374B2 (ja) * 2012-09-12 2016-11-16 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
JP5737304B2 (ja) * 2013-01-18 2015-06-17 株式会社村田製作所 フィルタ回路
US10125422B2 (en) 2013-03-27 2018-11-13 Applied Materials, Inc. High impedance RF filter for heater with impedance tuning device
US10032608B2 (en) 2013-03-27 2018-07-24 Applied Materials, Inc. Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground
US9589767B2 (en) * 2013-07-19 2017-03-07 Advanced Energy Industries, Inc. Systems, methods, and apparatus for minimizing cross coupled wafer surface potentials
CN104753486B (zh) * 2013-12-31 2019-02-19 北京北方华创微电子装备有限公司 一种射频滤波器及半导体加工设备
KR102247560B1 (ko) * 2014-07-14 2021-05-03 삼성전자 주식회사 Rps에서의 플라즈마 생성방법, 및 그 플라즈마 생성방법을 포함한 반도체 소자 제조방법
US10879041B2 (en) * 2015-09-04 2020-12-29 Applied Materials, Inc. Method and apparatus of achieving high input impedance without using ferrite materials for RF filter applications in plasma chambers
JP2019504481A (ja) * 2015-12-07 2019-02-14 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 静電チャックを使用した基板の固定と開放のための方法及び装置
JP6674800B2 (ja) * 2016-03-07 2020-04-01 日本特殊陶業株式会社 基板支持装置
US10435789B2 (en) * 2016-12-06 2019-10-08 Asm Ip Holding B.V. Substrate treatment apparatus
JP7235683B2 (ja) 2017-06-08 2023-03-08 アプライド マテリアルズ インコーポレイテッド ハードマスク及びその他のパターニング応用のための高密度低温炭素膜

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